Hamamatsu Photonics Datasheets for Photodiodes
Photodiodes are used for the detection of optical power (UV, Visible, and IR) and for the conversion of optical power to electrical power.
Photodiodes: Learn more
| Product Name | Notes |
|---|---|
| φ14 mm lens plastic package This is a Si PIN photodiode molded into a plastic package with a φ14 mm lens. Features - Clear type - Plastic packages with φ14... | |
| φ14 mm lens plastic package This is a Si PIN photodiode molded into a plastic package with a φ14 mm lens. Features - High-speed response - Clear type - Plastic... | |
| φ14 mm lens plastic package This is a Si PIN photodiode molded into a plastic package with a φ14 mm lens. Features - High-speed response - Visible-cut type - Plastic... | |
| φ14 mm lens plastic package This is a Si PIN photodiode molded into a plastic package with a φ14 mm lens. Features - Visible-cut type - Plastic packages with φ14... | |
| φ7 mm lens plastic package The S6036 is a Si PIN photodiode molded into a plastic package with a Φ7 mm lens. Features - Plastic package with φ7 mm lens... | |
| φ7 mm lens plastic package The S6036-01 is a Si PIN photodiode molded into a plastic package with a Φ7 mm lens. Features - Plastic package with φ7 mm lens... | |
| 16 element Si photodiode array for UV to NIR The S4111-16Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily... | |
| 16 element Si photodiode array for UV to NIR The S4111-16R is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily... | |
| 16-element array | |
| 16-element InGaAs array | |
| 32-element InGaAs array | |
| 35 element Si photodiode array for UV to NIR The S4111-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily... | |
| 35-element Si photodiode array for UV to NIR The S4114-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed... | |
| 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and... | |
| 46 element Si photodiode array for UV to NIR The S4111-46Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily... | |
| 46-element InGaAs array | |
| 46-element Si photodiode array for UV to NIR The S4114-46Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed... | |
| 6-element array for encoders The S14833 is a surface mount type 6-element Si PIN photodiode array. Each of the six element is separated, and their arrangement is suitable for encoders. | |
| 800 MHz frequency band balanced detectors (Optimal wavelength band: 1.0 μm) C12668-05 is a differential amplification type photoelectric conversion module containing two Hamamatsu photodiodes with balanced characteristics. The photodiodes are... | |
| 800 MHz frequency band balanced detectors (Optimal wavelength band: 1.3 μm) C12668-06 is a differential amplification type photoelectric conversion module containing two Hamamatsu photodiodes with balanced characteristics. The photodiodes are... | |
| A scintillator can be mounted directly on the chip. The S12497 is a Si photodiode suitable for non-destructive inspection of baggage and the like and general industrial measurement. As it... | |
| A scintillator can be mounted directly on the chip. The S12498 is a Si photodiode suitable for non-destructive inspection of baggage and the like and general industrial measurement. As it... | |
| Absorbance measurement module with built-in photodiode array, optical elements, current-to-voltage converter, etc. The C13398 series is an optics module for absorbance measurement featuring high blocking performance (OD>4) and low noise. | |
| Angled PC compatible, receptacle type This is a high-speed photosensor developed for Doppler LiDAR. This is a receptacle type compatible with FC/Angled PC, and has a built-in high-speed InGaAs PIN... | |
| Applicable to lead-free solder reflow and wide temperature range The S13954-01CT is a photodiode that is applicable to lead-free solder reflow and has an extremely wide operating and storage temperature... | |
| Applicable to lead-free solder reflow and wide temperature range The S9981-01CT is a photodiode that is applicable to lead-free solder reflow and has an extremely wide operating and storage temperature... | |
| Applicable to lead-free solder reflow and wide temperature range The S9674 is a photodiode that is applicable to lead-free solder reflow and has an extremely wide operating and storage temperature... | |
| Asynchronous type light modulation photo IC The S4289-61 is an asynchronous type light modulation photo IC designed for reliable detection even under disturbance background light. A photodiode, preamplifier, comparator, oscillator... | |
| Back-illuminated photodiode array for non-destructive X-ray inspection, suitable structure for tiling The S13620-02 is an 8 × 8 element Si photodiode array with a back-illuminated type structure for X-ray non-destructive... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 1.17 mm) The S12858-122 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It is modified ed... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 1.17 mm) The S12858-324 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It is modified versions... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 1.17 mm) The S12858-422 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It is modified versions... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 1.17 mm) The S12859-122 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It is modified ed... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 1.17 mm) The S12859-324 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It is modified versions... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 1.17 mm) The S12859-422 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It is modified versions... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 2.5 mm) The S12362-021 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 2.5 mm) The S12362-121 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 2.5 mm) The S12362-421 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 2.5 mm) The S12363-021 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 2.5 mm) The S12363-121 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 2.5 mm) The S12363-421 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection, slender board type The S11299-121 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection The S11212-021 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection The S11212-121 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection The S11212-321 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection The S11212-422 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode... | |
| Back-illuminated photodiode array for X-ray non-destructive inspection The S12362-321is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array is also simple to handle... | |
| Back-illuminated photodiode arrays for X-ray non-destructive inspection (element pitch: 1.17 mm) The S12858-021 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It is modified versions... | |
| Back-illuminated photodiode arrays for X-ray non-destructive inspection (element pitch: 1.17 mm) The S12859-021 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It is modified versions... | |
| Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299-021 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity... | |
| Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299-321 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity... | |
| Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299-422 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity... | |
| Back-illuminated photodiodes with CSP structure A scintillator can be coupled directly on the chip by using a back-illuminated photodiode. It is designed with minimal dead space around the product. This... | |
| Balanced detector supporting a wide temperature range This is a differential amplification type photoelectric conversion module containing two Hamamatsu photodiodes with balanced characteristics. The photodiodes are connected in a direction... | |
| Balanced detectors with reduced multiple reflections (Optimal wavelength band: 1.0 μm) C12668-01 is a differential amplification type photoelectric conversion module containing two Hamamatsu photodiodes with balanced characteristics. The photodiodes are... | |
| Balanced detectors with reduced multiple reflections (Optimal wavelength band: 1.0 μm) C12668-03 is a differential amplification type photoelectric conversion module containing two Hamamatsu photodiodes with balanced characteristics. The photodiodes are... | |
| Balanced detectors with reduced multiple reflections (Optimal wavelength band: 1.3 μm) C12668-02 is a differential amplification type photoelectric conversion module containing two Hamamatsu photodiodes with balanced characteristics. The photodiodes are... | |
| Balanced detectors with reduced multiple reflections (Optimal wavelength band: 1.3 μm) C12668-04 is a differential amplification type photoelectric conversion module containing two Hamamatsu photodiodes with balanced characteristics. The photodiodes are... | |
| BBack-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 2.5 mm) The is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array is... | |
| Ceramic package with large active area (φ10 mm) Features - Large active area: φ10 mm - High sensitivity: 0.95 A/W typ. (λ=1.55 μm) - Low dark current - Low PDL:... | |
| Chip carrier package for surface mount The S5106 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. This photodiode has... | |
| Chip carrier package for surface mount The S5107 is a Si PIN photodiode sealed in chip carrier package suitable for surface mount using automated solder reflow techniques. This photodiode has... | |
| COB type, applicable to lead-free solder reflow The S16392-01CT is a Si PIN photodiode for visible to near infrared range and is compatible with lead-free solder reflow processes. The small... | |
| COB type, applicable to lead-free solder reflow The S10625-01CT is a Si photodiode for visible to near infrared range and is compatible with lead-free solder reflow processes. The small and... | |
| COB type, applicable to lead-free solder reflow The S10993-02CT a Si PIN photodiode for visible to near infrared range and is compatible with lead-free solder reflow processes. The small and... | |
| Compact photosensor in a plastic package The S14016-01DT is a Si PIN photodiode for visible to near infrared range. It is provided in a compact surface mount type plastic package. | |
| Current-to-voltage conversion amplifier for high-speed InGaAs PIN photodiode | |
| Current-to-voltage conversion amplifier for high-speed Si PIN photodiode | |
| Dedicated evaluation circuit for the optics module (C13398 series) The C13390 is a dedicated evaluation circuit for the optics module (C13398 series). When the C13390 is connected to the PC... | |
| Detector for X-ray monitor Features - Si photodiode coupled to low cost CsI scintillator - Ideal for detection of X-ray energy below 100 keV | |
| Detector for X-ray monitors Features - High sensitivity, high reliability photodiode with ceramic scintillator - High X-ray sensitivity: 1.8 times that of CWO - Less afterglow than CsI: <0.1 %/3... | |
| Digital output function, current-to-voltage conversion amplifier for amplifying very slight photocurrent with low noise C9329-01 is a current-to-voltage conversion amplifier used to amplify very slight photocurrent from a photodiode with... | |
| Dual-element photodiode using newly developed small, thin package The S9345 is a dual-element Si PIN photodiode employing a newly developed small, thin plastic package. The cubic volume reduced to onefifth... | |
| Dual-element, plastic package photodiode The S3096-02 is a dual-element Si PIN photodiode molded into plastic package. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. | |
| Dual-element, plastic package photodiode The S4204 is a dual-element Si PIN photodiode molded into plastic packages. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. | |
| Fewer detection errors even under disturbance background light (Reel packing) This light modulation photo IC was developed for optical synchronous detection under disturbance background light. A photodiode, preamplifier, comparator, oscillator,... | |
| Fewer detection errors even under disturbance background light (Stick packing) This light modulation photo IC was developed for optical synchronous detection under disturbance background light. A photodiode, preamplifier, comparator, oscillator,... | |
| Fewer detection errors even under disturbance background light This light modulation photo IC was developed for optical synchronous detection under disturbance background light. A photodiode, preamplifier, comparator, oscillator, LED driver... | |
| Flat response characteristics up to high frequency bands The S9055 Si PIN photodiode delivers a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low... | |
| Flat response characteristics up to high frequency bands The S9055-01 Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low... | |
| Flat surface ideal for bonding to scintillator The S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 μm). When bonded to a... | |
| For 1.25 Gbps optical fiber communications This optical transceiver is capable of serial data communication at data rate of 150 Mbps to 1.25 Gbps. The standardized optical connector shape enables... | |
| For 1.25 Gbps optical free-space communication This optical transceiver is capable of free-space optical data communication. By placing two of this product facing each other on the optical axis, full-duplex... | |
| For 150 Mbps optical link tramsmitter photo IC This photo IC is capable of data communication at a data rate of 150 Mbps through a plastic optical fiber (POF). Its... | |
| For UV to IR, precision photometry Features - High UV sensitivity: QE 75% (λ=200 nm) - Low capacitance | |
| For UV to IR, precision photometry Features - High UV sensitivity: QE=75% (λ=200 nm) - Low capacitance | |
| For UV to IR, precision photometry Features - Low capacitance | |
| For UV to visible, precision photometry; suppressed IR sensitivity | |
| For UV to visible, precision photometry; suppressed IR sensitivity Features - High UV sensitivity (quartz window type): QE＝75 % (λ=200 nm) - Suppressed IR sensitivity - Low dark current | |
| For UV to visible, precision photometry; suppressed IR sensitivity Features - Resin potting type - Suppressed IR sensitivity - Low dark current | |
| For UV to visible, precision photometry; suppressed near IR sensitivity Features - High UV sensitivity: QE＝75 % (λ=200 nm) - Suppressed near IR sensitivity - Low dark current - High... | |
| For visible to IR, general-purpose photometry S12915 series have high sensitivity in the visible range to near IR. They provide higher sensitivity than the S2387 series and can be used... | |
| For visible to IR, general-purpose photometry S2387-1010R: Not recommended for new designs. We recommend the successor, S12915 series when purchasing a new product. For more information, refer to the following... | |
| For visible to IR, general-purpose photometry S2387-16R: Not recommended for new designs. We recommend the successor, S12915 series when purchasing a new product. For more information, refer to the following... | |
| For visible to IR, general-purpose photometry S2387-33R: Not recommended for new designs. We recommend the successor, S12915 series when purchasing a new product. For more information, refer to the following... | |
| For visible to IR, general-purpose photometry S2387-66R: Not recommended for new designs. We recommend the successor, S12915 series when purchasing a new product. For more information, refer to the following... | |
| For visible to near IR, general-purpose photometry Features - High sensitivity in visible to near infrared range - Low dark current - High reliability - Superior linearity | |
| For visible to near IR, precision photometry Features - High sensitivity in visible to near infrared range - High reliability - High-speed response: fc=20 MHz - Low capacitance | |
| For visible to near IR, precision photometry Features - High sensitivity in visible to near infrared range - High reliability - High-speed response: fc=30 MHz - Low capacitance | |
| High performance, high reliability Si PIN photodiode The S5821 is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. The... | |
| High performance, high reliability Si PIN photodiode The S5821-01 is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. The... | |
| High performance, high reliability Si PIN photodiode The S5821-02 is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. The... | |
| High performance, high reliability Si PIN photodiode The S5821-03 is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. The... | |
| High reliability photo IC operable at 2.2 V The S12558-01DT is a photo IC comprised of a photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated onto a single... | |
| High reliability photo IC operable at 2.2 V The S12558-02DT is a photo ICs comprised of a photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated onto a single... | |
| High reliability photo IC operable at 2.2 V The S7610-10 is a photo IC comprised of a photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated onto a single... | |
| High reliability, Large photosensitive area (5 × 5 mm), Reel packing The S7478 series are PIN photodiodes having a large photosensitive area and surface mount flat package with leads. There... | |
| High reliability, Large photosensitive area (5 × 5 mm), Stick packing The S7478 series are PIN photodiodes having a large photosensitive area (5 × 5 mm) and surface mount flat... | |
| High sensitivity from short wavelength to 800 nm This is an APD with improved sensitivity from short wavelength to 800 nm range. It offers high gain, high sensitivity, and low... | |
| High sensitivity in near infrared range (λ=900 nm) This is a Si APD that offer enhanced 900 nm band near-infrared sensitivity. This is a suitable for applications such as optical... | |
| High sensitivity in near IR range (λ=900 nm) | |
| High sensitivity, direct detection of low energy (1 keV or more) electron beams Features - Direct detection of low energy (1 keV or more) electron beams with high sensitivity -... | |
| High sensitivity, high-speed response The S9703-11 photo IC uses a high-speed PIN photodiode designed for laser beam synchronous detection. When compared to S9703 and S9703-01 previously marketed, S9703-11 has reduced... | |
| High UV resistance, high-speed response, photodiodes for UV monitor The S16586 is a high-speed response Si PIN photodiode that has achieved high reliability for monitoring ultraviolet light. They exhibit low... | |
| High UV resistant and back-illuminated Si photodiode with CSP structure The S15289-33 is a back-illuminated type Si photodiode that has achieved high reliability for monitoring ultraviolet light. It exhibits low... | |
| High UV tolerance, photodiodes for UV monitor The S12698 series are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use... | |
| High-sensitivity and high-speed photo IC for high precision printing The S11282-01DS photo IC uses a dual-element Si PIN photodiode and compare the two signals to obtain a highly stable output... | |
| High-sensitivity and high-speed photo IC for high precision printing The S9684 photo IC uses a dual-element Si PIN photodiode and compares the two signals to obtain a highly stable output... | |
| High-sensitivity and high-speed photo IC for high precision printing The S9684-01 photo IC uses a dual-element Si PIN photodiode and compares the two signals to obtain a highly stable output... | |
| High-sensitivity Si APD for detection of light with a wavelength of 266 nm The S14124-20 is an improved Si APD from the S8664 series for high sensitive detection of light... | |
| High-sensitivity type, Active area: Φ1.5 mm APD module is designed for easy use of Si APD. | |
| High-sensitivity type, Active area: Φ3.0 mm APD module is designed for easy use of Si APD. | |
| High-speed detector with plastic package The S10783 is a high-speed APC (auto power control) detector developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. | |
| High-speed detector with plastic package The S10784 is a high-speed APC (auto power control) detector developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. | |
| High-speed detector with plastic package The S11062-35GT is a photosensor for high-speed APC (automatic power control) supporting laser diodes with an emission wavelength of 660 nm or 780 nm. It... | |
| High-speed response (1 GHz) The S5973 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides wideband characteristics at a low bias, making... | |
| High-speed response (1 GHz) The S5973-02 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides violet enhanced sensitivity, making it suitable for... | |
| High-speed response (100 MHz) The S5971 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides wideband characteristics at a low bias, making... | |
| High-speed response (500 MHz) The S5972 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides wideband characteristics at a low bias, making... | |
| High-speed response InGaAs APD The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection. Features - Low dark current - Low capacitance - High sensitivity... | |
| High-speed response InGaAs APD The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection. The G8931-04 provides high-speed response at 2.5 Gbps, which is necessary... | |
| High-speed response InGaAs APD The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection. The G8931-20 features a large photosensitive area. (φ0.2 mm) Features -... | |
| High-speed type, Active area: Φ0.5 mm The C5658 is a highly sensitive photodetector consisting of a Si APD (avalanche photodiode), a bias power supply and a low-noise amplifier, all integrated... | |
| High-speed, compact Si APD that does not require temperature adjustment The S15413-02 is a gain-stabilized APD (GS APD) with a built-in temperature compensation function inside the sensor. This realizes constant... | |
| High-speed, compact Si APD that does not require temperature adjustment The S15414 series is a gain-stabilized APD (GS APD) with a built-in temperature compensation function inside the sensor. This realizes... | |
| High-speed, compact Si APD that does not require temperature adjustment The S15415 series is a gain-stabilized APD (GS APD) with a built-in temperature compensation function inside the sensor. This realizes... | |
| Highly reliable photodiode for VUV detection The S10043 is a Si photodiode designed to detect high-power ArF excimer lasers (193 nm) with high accuracy and stability. By combining our newly... | |
| Highly reliable quadrant photodiode for ArF excimer laser monitor The S10359 is a quadrant Si photodiode that has achieved high reliability for ultraviolet light. It exhibits low sensitivity deterioration under... | |
| I 2 C-compatible InGaAs photodiodes | |
| InGaAs APD that greatly reduces dark current This InGaAs APD greatly reduces dark current over existing products by the use of a new device structure and improved processing. The G14858-0020AA... | |
| Integrates a Si photodiode for precision photometry with low-noise amp (Photosensitive area: 10 × 10 mm) C10439-03 photodiode module is a high-precision photodetector that integrates a Si photodiode and a... | |
| Integrates a Si photodiode for precision photometry with low-noise amp (Photosensitive area: 2.4 × 2.4 mm) C10439-01 photodiode module is a high-precision photodetector that integrates a Si photodiode and a... | |
| Integrates a Si photodiode for precision photometry with low-noise amp (Photosensitive area: 5.8 × 5.8 mm) C10439-02 photodiode module is a high-precision photodetector that integrates a Si photodiode and a... | |
| Integrates photodiode for precision photometry with low-noise amp (Photosensitive area: Φ1 mm) The C10439 series photodiode modules are high-precision photodetector that integrates a photodiode and a current-to-voltage amplifier. The output... | |
| Integrates photodiode for precision photometry with low-noise amp (Photosensitive area: Φ3 mm) The C10439 series photodiode modules are high-precision photodetector that integrates a photodiode and a current-to-voltage amplifier. The output... | |
| Integrates photodiode for precision photometry with low-noise amp (Photosensitive area: 10 × 10 mm) The C10439 series photodiode modules are high-precision photodetector that integrates a photodiode and a current-to-voltage amplifier. | |
| Integrates photodiode for precision photometry with low-noise amp (Photosensitive area: 2.4 × 2.4 mm) The C10439 series photodiode modules are high-precision photodetector that integrates a photodiode and a current-to-voltage amplifier. | |
| Integrates photodiode for precision photometry with low-noise amp (Photosensitive area: 5.8 × 5.8 mm) The C10439 series photodiode modules are high-precision photodetector that integrates a photodiode and a current-to-voltage amplifier. | |
| Integrates photodiode for precision photometry with low-noise amp [Photosensitive area: 2.4 × 2.4 mm (Si), φ1 mm (InGaAs), built-in Two-color detector] The C10439 series photodiode modules are high-precision photodetectors that... | |
| Large active area Si PIN photodiodes Features - Sensitivity matching with BGO and CsI(TI) scintillators - Low capacitance - High-speed response - High stability - Good energy resolution | |
| Large area photodiode integrated with op amp and TE-cooler THe S9295 is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp, TE-cooler... | |
| Large area photodiode integrated with op amp and TE-cooler The S9295-01 is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp, TE-cooler... | |
| Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass... | |
| Large area, high-speed Si PIN photodiode The S3071 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 40 MHz. This photodiode... | |
| Large area, high-speed Si PIN photodiode The S3072 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 45 MHz. This photodiode... | |
| Large area, high-speed Si PIN photodiode The S3399 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 100 MHz. This photodiode... | |
| Large area, high-speed Si PIN photodiode The S3883 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 300 MHz. This photodiode... | |
| Large photosensitive area Si PIN photodiode Features - Low capacitance - High-speed response - High stability - Good energy resolution - Sensitivity matching with BGO and CsI(TI) scintillators | |
| Large photosensitive area Si PIN photodiode Features - Sensitivity matching with BGO and CsI(TI) scintillators - Bare chip type (unsealed) - High quantum efficiency - Low capacitance - High-speed response... | |
| Large photosensitive area Si PIN photodiode Features - Sensitivity matching with BGO and CsI(TI) scintillators - Low capacitance - High-speed response - High stability - Good energy resolution | |
| Large photosensitive area Si PIN photodiode Features - Sensitivity matching with blue scintillator (LSO, GSO, etc.) - Bare chip type (unsealed) - High quantum efficiency - Low capacitance - High-speed... | |
| Large photosensitive area Si PIN photodiode Features - Sensitivity matching with blue scintillator (LSO, GSO, etc.) - Low capacitance - High-speed response - High stability - Good energy resolution | |
| Large photosensitive area Si PIN photodiodes Features - Sensitivity matching with BGO and CsI(TI) scintillators - Low capacitance - High-speed response - High stability - Good energy resolution | |
| Large-area Si PIN photodiode for direct radiation detection The S13993 is an unsealed type large area Si PIN photodiode for direct radiation detection. Since the photosensitive area is coated with... | |
| Large-area Si PIN photodiode for direct radiation detection The S14605 is an unsealed type large large-area Si PIN photodiode for direct radiation detection. It can detect high-energy radiation with high... | |
| Light-to-voltage conversion amplifier with optical fiber | |
| Long wavelength type (cutoff wavelength: 1.85 μm) Features - Cutoff wavelength: 1.85 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 1.85 μm) Features - Cutoff wavelength: 1.85 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 1.85 μm) Features - Cutoff wavelength: 1.85 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 1.85 μm) Features - Cutoff wavelength: 1.85 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 1.85 μm) Features - Cutoff wavelength: 1.85 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 1.87 μm) Features - Cutoff wavelength: 1.87 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 1.87 μm) Features - Cutoff wavelength: 1.87 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 1.87 μm) Features - Cutoff wavelength: 1.87 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 1.87 μm) Features - Cutoff wavelength: 1.87 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 1.87 μm) Features - Cutoff wavelength: 1.87 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 1.9 μm) Features - Cutoff wavelength: 1.9 μm - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 1.9 μm) Features - Cutoff wavelength: 1.9 μm - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 1.9 μm) Features - Cutoff wavelength: 1.9 μm - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 1.9 μm) Features - Cutoff wavelength: 1.9 μm - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 1.9 μm) Features - Cutoff wavelength: 1.9 μm - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 2.05 μm) Features - Cutoff wavelength: 2.05 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.05 μm) Features - Cutoff wavelength: 2.05 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.05 μm) Features - Cutoff wavelength: 2.05 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.05 μm) Features - Cutoff wavelength: 2.05 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.05 μm) Features - Cutoff wavelength: 2.05 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.07 μm) Features - Cutoff wavelength: 2.07 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.07 μm) Features - Cutoff wavelength: 2.07 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.07 μm) Features - Cutoff wavelength: 2.07 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.07 μm) Features - Cutoff wavelength: 2.07 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.07 μm) Features - Cutoff wavelength: 2.07 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.1 μm) Features - Cutoff wavelength: 2.1 μm - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 2.1 μm) Features - Cutoff wavelength: 2.1 μm - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 2.1 μm) Features - Cutoff wavelength: 2.1 μm - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 2.1 μm) Features - Cutoff wavelength: 2.1 μm - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 2.1 μm) Features - Cutoff wavelength: 2.1 μm - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 2.55 μm) Features - Cutoff wavelength: 2.55 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.55 μm) Features - Cutoff wavelength: 2.55 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.55 μm) Features - Cutoff wavelength: 2.55 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.55 μm) Features - Cutoff wavelength: 2.55 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.55 μm) Features - Cutoff wavelength: 2.55 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.57 μm) Features - Cutoff wavelength: 2.57 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.57 μm) Features - Cutoff wavelength: 2.57 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.57 μm) Features - Cutoff wavelength: 2.57 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.57 μm) Features - Cutoff wavelength: 2.57 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.57 μm) Features - Cutoff wavelength: 2.57 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity... | |
| Long wavelength type (cutoff wavelength: 2.6 μm) Features - Cutoff wavelength: 2.6 μm - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 2.6 μm) Features - Cutoff wavelength: 2.6 μm - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 2.6 μm) Features - Cutoff wavelength: 2.6 μm - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 2.6 μm) Features - Cutoff wavelength: 2.6 μm - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type (cutoff wavelength: 2.6 μm) Features - Cutoff wavelength: 2.6 μm - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity - High reliability... | |
| Long wavelength type APD | |
| Low bias operation, for 800 nm band, TE-cooled type This is a TE-cooled type APD with low-bias operation, capable of high accuracy detection. Features - Stable operation at low bias... | |
| Low bias operation, for 800 nm band, TE-cooled type This is a TE-cooled type APD with low-bias operation, capable of high accuracy detection. Features - Stable operation at low bias... | |
| Low bias operation, for 800 nm band | |
| Low bias operation, for 800 nm band This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable... | |
| Low bias, high-speed Si APD for 900 nm The S12426 series Si APD are designed to provide a peak sensitivity wavelength in the 900 nm band where optical rangefinders are... | |
| Low dark current, premolded packages These are photodiodes that offer low dark current to measure low to high illumination with high accuracy. The premolded package is designed to block stray... | |
| Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-81 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. | |
| Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-82 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. | |
| Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-83 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. | |
| Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-85 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise. | |
| Low temperature coefficient type APD for 800 nm band | |
| Low temperature coefficient, for 800 nm band This is a 800 nm band near-infrared Si APD that can operate stably over a wide temperature range. This is suitable for applications... | |
| Low voltage operation (3.3 V) The S11257-01DT photo IC uses a high-speed PIN photodiode designed for laser beam synchronous detection. It operates at a low voltage (3.3 V) compatible with... | |
| Low voltage operation (3.3 V) The S13114-01DT photo IC uses a high-speed PIN photodiode designed for laser beam synchronous detection. It operates at a low voltage (3.3 V) compatible with... | |
| Low voltage operation (3.3 V) The S13114-02DT photo IC uses a high-speed PIN photodiode designed for laser beam synchronous detection. It operates at a low voltage (3.3 V) compatible with... | |
| Multi-element photodiode for surface mounting | |
| Multimode optical fiber compatible, receptacle type This high-speed photosensor was developed for optical fiber communication in the 0.85 µm band. This receptacle type Si PIN photodiode is compatible with GI-50... | |
| Near infrared detector in surface mount type ceramic package It is a near infrared detector in a surface mount type ceramic package. It realizes high sensitivity and low noise, and... | |
| Operation at low voltage from 2.2 V The S4810 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single... | |
| Operation at low voltage from 2.2 V The S6289 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single... | |
| Optics modules | |
| Photo IC for 50 Mbps optical link The S7140-10 is designed for POF (Plastic Optical Fiber) communications. This device is molded into miniature plastic packages with lenses, allowing easy and... | |
| Photodiode and preamp integrated with feedback resistance and capacitance This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. | |
| Photodiode array combined with signal processing IC for X-ray detection This is a photodiode array with an amplifier and a phosphor sheet attached to the photosensitive area for X-ray detection. | |
| Photodiode array combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous... | |
| Photodiode array combined with signal processing IC This is a Si photodiode array combined with a signal processing IC chip. Improvement in the signal processing IC chip has achieved higher... | |
| Photodiode array combined with signal processing IC This is Si photodiode array combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and... | |
| Photodiode array for DWDM monitor | |
| Photodiode arrays combined with signal processing IC for X-ray detection The S13885 series are photodiode arrays with amplifirs having a phosphor sheet attached to the photosensitive area for X-ray detection. | |
| Photodiode arrays combined with signal processing IC for X-ray detection The S13886-128G is a series are photodiode array with amplifiers having a phosphor sheet attached to the photosensitive area for... | |
| Photodiode molded into clear plastic package Features - Visible range (Filterless type) | |
| Photodiode molded into clear plastic package Features - Visible to near IR range | |
| Photodiode with a filter for monochromatic light (220 nm) detection The S12742-220 uses an interference filter for its window and is sensitive only to monochromatic light. The spectral response width... | |
| Photodiode with a filter for monochromatic light (254 nm) detection The S12742-254 uses an interference filter for its window and is sensitive only to monochromatic light. The spectral response width... | |
| Photodiode with a filter for monochromatic light (275 nm) detection The S12742-275 uses an interference filter for its window and is sensitive only to monochromatic light. The spectral response width... | |
| Photodiode with band-pass filter for monochromatic light (220 nm) detection S16014-220 is a photodiode that has a built-in band-pass filter and is sensitive only to monochromatic light. The peak wavelength... | |
| Photodiode with mini-lens, high-speed response (1 GHz) The S5973-01 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. The mini-lens type photodiode can be efficiently... | |
| Photodiode with sensitivity close to spectral luminous efficiency The S16839-01MS is a Si photodiode having a spectral response characteristic that is more similar to the human eye sensitivity (spectral luminous... | |
| Photosensitive area: φ0.3 mm Features - Low noise, low dark current - Low terminal capacitance - Photosensitive area: φ0.3 mm - Low noise | |
| Photosensitive area: φ0.5 mm Features - Low noise, low dark current - Low terminal capacitance - Photosensitive area: φ0.5 mm - Low noise | |
| Photosensitive area: φ1 mm Features - Low noise, low dark current - Low terminal capacitance - Photosensitive area: φ1 mm | |
| Photosensitive area: φ1 mm Features - Low noise, low dark current - Low terminal capacitance - Photosensitive area: φ1 mm - Low noise | |
| Photosensitive area: φ2 mm Features - Low noise, low dark current - Low terminal capacitance - Photosensitive area: φ2 mm | |
| Photosensitive area: φ2 mm Features - Low noise, low dark current - Low terminal capacitance - Photosensitive area: φ2 mm - Low noise | |
| Photosensitive area: φ3 mm Features - Low noise, low dark current - Low terminal capacitance - Photosensitive area: φ3 mm | |
| Photosensitive area: φ3 mm Features - Low noise, low dark current - Low terminal capacitance - Photosensitive area: φ3 mm - Low noise | |
| Photosensitive area: φ5 mm Features - Low noise, low dark current - Low terminal capacitance - Photosensitive area: φ5 mm | |
| Photosensitive area: φ5 mm Features - Low noise, low dark current - Low terminal capacitance - Photosensitive area: φ5 mm - Low noise | |
| Pigtail type, 1.3/1.55 μm, 2 GHz The G8195-11 is a high-speed receiver specifically developed for 1.3/1.55 μm band power monitor in opticalfiber communications. This device incorporates a high-speed, high-sensitivity InGaAs... | |
| Pigtail type, 1.3/1.55 μm, 2 GHz The G8195-12 is a high-speed receiver specifically developed for 1.3/1.55 μm band power monitor in opticalfiber communications. This device incorporates a high-speed, high-sensitivity InGaAs... | |
| Pigtail type, 1.3/1.55 μm, 2.5 Gbps G9822-11 is a family of high-speed receivers specifically developed for 1.3/1.55 μm band optical fiber communications. This device incorporates a high-speed, high-sensitivity InGaAs PIN... | |
| Pigtail type, 1.3/1.55 μm, 2.5 Gbps G9822-12 is a family of high-speed receivers specifically developed for 1.3/1.55 μm band optical fiber communications. This device incorporates a high-speed, high-sensitivity InGaAs PIN... | |
| Plastic package photodiode with low dark current S1787-04 is a family of plastic package photodiodes that offer low dark current. Plastic package used is light-impervious, so no stray light can... | |
| Plastic package photodiode with low dark current The S1787-08 is a plastic package photodiode that offers low dark current. Plastic package used is light-impervious, so no stray light can reach... | |
| Plastic package photodiode with low dark current The S1787-12 is a plastic package photodiode that offers low dark current. Plastic package used is light-impervious, so no stray light can reach... | |
| Plastic SIP (single in-line package) S2506-02 is a Si PIN photodiode with large active areas, molded into a clear plastic SIP for detecting visible to near infrared range. Features -... | |
| Plastic SIP (single in-line package) S2506-04 is a Si PIN photodiode with large active areas, molded into a visible-cut plastic SIP for detecting near infrared range only. Features - Visible-cut... | |
| Plastic SIP (single in-line package) The S6775 is a Si PIN photodiode with large photosensitive area, molded into a clear plastic SIP for detecting near infrared range. This Si PIN... | |
| Plastic SIP (single in-line package) The S6775-01 is a Si PIN photodiode with large photosensitive area, molded into a visible-cut plastic SIP for detecting near infrared range only. This Si... | |
| Plastic SIP (single in-line package) The S6967 is a Si PIN photodiode with large photosensitive area, molded into a clear plastic SIP for detecting visible to near infrared range. This... | |
| Plastic SIP (single in-line package) The S6967-01 is a Si PIN photodiode with large photosensitive area, molded into a visible-cut plastic SIP for detecting near infrared range only. This Si... | |
| Quadrant Si PIN photodiode The S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such... | |
| Quadrant type | |
| Receiver for 156 Mbps POF communications The S7727 is designed for high-speed POF (Plastic Optical Fiber) communications. This device is molded into miniature plastic packages with lenses, allowing easy and... | |
| Receiver with sleeping mode suitable for 50 Mbps optical link The S8046 is optical communication devices designed for POF (Plastic Optical Fiber) data links. The S8046 is a high sensitivity,... | |
| Receptacle type, 1.3/1.55 μm, 2 GHz The G9801-22 is a high-speed receiver specifically developed for 1.3/1.55 μm band power monitor in optical fiber communications. This device incorporates a high-speed, high-sensitivity... | |
| Receptacle type, 1.3/1.55 μm, 2 GHz The G9801-32 is high-speed receiver specifically developed for 1.3/1.55 μm band power monitor in optical fiber communications. This device incorporates a high-speed, high-sensitivity InGaAs... | |
| Receptacle type, 1.3/1.55 μm, 2.5 Gbps G9821-22 is a family of high-speed receivers specifically developed for 1.3/1.55 μm band optical fiber communications. This device incorporates a high-speed, high-sensitivity InGaAs PIN... | |
| Receptacle type, 1.3/1.55 μm, 2.5 Gbps G9821-32 is a family of high-speed receivers specifically developed for 1.3/1.55 μm band optical fiber communications. This device incorporates a high-speed, high-sensitivity InGaAs PIN... | |
| Short wavelength type APD | |
| Short wavelength type APD The S16453 series is a Si APD that has significantly higher sensitivity at short wavelength than previous product (S8664 series). (There are products that are slower... | |
| Short-wavelength type, Active area: Φ1.0 mm APD module is designed for easy use of Si APD. | |
| Short-wavelength type, Active area: Φ3.0 mm APD module is designed for easy use of Si APD. | |
| Si detectors for high-energy particles The S14536 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays. These detectors are mounted on a PC... | |
| Si detectors for high-energy particles The S14537 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays. These detectors are mounted on a PC... | |
| Si photodiode for visible to infrared photometry The S15137 is a Si PIN photodiode developed for YAG lasers (1.06 µm). The photosensitivity at 1.06 µm is 0.57 A/W (typ.), which... | |
| Si photodiode for visible to near infrared region The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides... | |
| Si Photodiode molded into clear plastic package Features - Visible to near IR range (Suppressed IR sensitivity type) | |
| Si Photodiode molded into clear plastic package Features - Visible to near IR range | |
| Si photodiode with BNC connector The S2281 is a Si photodiode sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329-01 photosensor amplifier. | |
| Si photodiode with BNC connector The S2281-01 is a Si photodiode sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329-01 photosensor amplifier... | |
| Si photodiode with BNC connector The S2281-04 is a Si photodiode sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329-01 photosensor amplifier. | |
| Si PIN photodiode for general photometry Features - Clear plastic package: 4.5 × 5.5 mm - 4-pin DIP type - Photosensitive area: 2.4 × 2.8 mm | |
| Si PIN photodiode for optical power meters The S3994-01 is a Si PIN photodiode designed for optical power meters. The flat glass used as the light input window is less... | |
| Si PIN photodiode for UV to near infrared region The S13337-01 is a surface mount type Si PIN photodiode in a ceramic package with glass. This achieves high-speed response in... | |
| Si PIN photodiode for violet-laser detection The S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed response is achieved... | |
| Si PIN photodiode for visible to infrared photometry The S17348 is a Si PIN photodiode developed for YAG lasers (1060 nm). High photosensitivity of 0.37 A/W at 1060 nm and... | |
| Si PIN photodiode for visible to near infrared The S9119-01 is a wide directional Si PIN photodiode in a TO-18 package with a potted transparent epoxy resin. Features - Resin... | |
| Single-sided SSD for high energy particle position detection The Si strip detector (SSD) is a Si photodiode with PN junctions (particle detection structures) that are several micrometers to several tens... | |
| SIP plastic package The S8385 is a large area Si PIN photodiode molded into a miniature plastic SIP package (75% smaller in cubic volume than conventional types). Features - Small... | |
| SIP plastic package The S8729 is a large area Si PIN photodiode molded into a miniature plastic SIP package (75% smaller in cubic volume than conventional types). Features - Small... | |
| SIP plastic package The S8729-04 is a large area Si PIN photodiode molded into a miniature plastic SIP package (75% smaller in cubic volume than conventional types). Features - Small... | |
| SIP plastic package The S8729-10 is a large area Si PIN photodiode molded into a miniature plastic SIP package (75% smaller in cubic volume than conventional types). It is a... | |
| Small on-board type current-to-voltage conversion amp C9051-01 is a current-to-voltage conversion amplifier specifically designed for low-light-level measurement using a photodiode (sold separately) Features - Small on-board type for easy assembly... | |
| Small package, surface mount type, Active area: Φ0.2 mm | |
| Small package, surface mount type, Active area: Φ0.3 mm | |
| Small package, surface mount type, Active area: Φ1.0 mm | |
| Spectral response like human eye Features - Accurate visible-compensated filter is used - High reliable metal package - Metal package with BNC connector (photosensitive area: φ11.3 mm) | |
| Spectral response like human eye Features - Accurate visible-compensated filter is used - High reliable metal package - TO-5 (active area: 3.6 × 3.6 mm) | |
| Spherical lens window package for efficient fiber coupling | |
| Standard type, Active area: Φ1.0 mm APD module is designed for easy use of Si APD. | |
| Standard type, Active area: Φ3.0 mm APD module is designed for easy use of Si APD. | |
| Sub-mount type photodiode for LD monitor Features - Active area G15553-003C: φ0.3 mm - Miniature package: 2 × 2 × 1 mm - Precise chip position tolerance: ±0.075 mm | |
| Sub-mount type photodiode for LD monitor Features - Active area G15553-005C: φ0.5 mm - Miniature package: 2 × 2 × 1 mm - Precise chip position tolerance: ±0.075 mm | |
| Sub-mount type photodiode for LD monitor Features - Active area G15553-010C: φ1 mm - Miniature package: 2 × 2 × 1 mm - Precise chip position tolerance: ±0.075 mm | |
| Surface mount type 16-element Si APD array The S15249 is a surface mount type Si APD array with high sensitivity in the short wavelength range and low bias operation. This... | |
| Surface mount type COB package near-infrared detector The G15978-0020P is an InGaAs APD available in a surface mount type COB package. It is much smaller than the previous metal package... | |
| Surface mount type COB package with lens The G14448-003L is a compact near-infrared detector available in a surface mount type COB package with lens. Using the lens provides narrow directivity,... | |
| Surface mount type, high-speed Si photodiode The S13773 is a Si PIN photodiode with sensitivities in the visible to near infrared range and is compatible with lead-free solder reflow. The... | |
| Surface mount type, high-speed Si photodiode The S15193 is a Si PIN photodiode with sensitivities in the visible to near infrared range and is compatible with lead-free solder reflow. The... | |
| Surface mountable 16-element array The S15158 is a 16-element Si PIN photodiode array in surface mountable chip carrier package. It can be mounted using solder reflow and used in a... | |
| Surface mountable 16-element photodiode array The S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. The S8558... | |
| The G13176-003P is a small-size near infrared detector available in a surface mount COB package. Its size is drastically reduced compared to the previous metal package type (G12180-003A). The spectral... | |
| The G13176-010P is a small-size near infrared detector available in a surface mount COB package. Its size is drastically reduced compared to the previous metal package type (G12180-010A). The spectral... | |
| The S7509 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. This photodiode has a large photosensitive area, making it... | |
| The S7510 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. This photodiode has a large photosensitive area, making it... | |
| Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR The S2592-03 combines a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included... | |
| Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR The S2592-04 combines a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included... | |
| TO-46 package, 1.3/1.55 μm, 2.5 Gbps G9820 is a family of high-speed receivers specifically developed for 1.3/1.55 μm band optical fiber communications. This device incorporates a high-speed, high-sensitivity InGaAs PIN... | |
| TO-46 package, 1.3/1.55 μm, 2.5 Gbps G9820-02 is a family of high-speed receivers specifically developed for 1.3/1.55 μm band optical fiber communications. This device incorporates a high-speed, high-sensitivity InGaAs PIN... | |
| UV to near IR for precision photometry Features - High sensitivity in UV range - Low capacitance - High reliability | |
| Vacuum UV (VUV) monitoring photodiodes S8552 have sensitivity in the vacuum UV region. It is specially suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring. Its design optimized... | |
| Vacuum UV (VUV) monitoring photodiodes S8553 have sensitivity in the vacuum UV region. It is specially suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring. Its design optimized... | |
| Variable gain, stable detection even at high gain The C10508-01 consists of an APD, current-to-voltage converter, high-voltage power supply circuit as well as microcontroller for compensating temperature with high stability... | |
| Wide spectral response range (0.5 to 1.7 μm), active area 0.3 mm dia. The G10899-003K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm... | |
| Wide spectral response range (0.5 to 1.7 μm), Active area: 0.5 mm dia. The G10899-005K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm... | |
| Wide spectral response range (0.5 to 1.7 μm), Active area: 1 mm dia. The G10899-01K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm... | |
| Wide spectral response range (0.5 to 1.7 μm), Active area: 2 mm dia. The G10899-02K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm... | |
| Wide spectral response range (0.5 to 1.7 μm), Active area: 3 mm dia. The G10899-03K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm... |