Hamamatsu Photonics Europe Si photodiodes S16838-01MS

Description
Low dark current, premolded packages These are photodiodes that offer low dark current to measure low to high illumination with high accuracy. The premolded package is designed to block stray light from the side and back of the package to reaching the photosensitive area. Features - S16838-01MS: For visible range - S16838/S16840-02MS: For visible to IR range - S16765-01MS: For v isible to near IR range
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Description
Low dark current, premolded packages These are photodiodes that offer low dark current to measure low to high illumination with high accuracy. The premolded package is designed to block stray light from the side and back of the package to reaching the photosensitive area. Features - S16838-01MS: For visible range - S16838/S16840-02MS: For visible to IR range - S16765-01MS: For v isible to near IR range
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Datasheet
Datasheet Summary
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The S16838-01MS is a silicon photodiode with a premolded plastic package designed to block stray light, optimized for visible-range illumination measurement. It has a photosensitive area of 2.8 × 2.4 mm, a spectral peak response at 560 nm, and a photosensitivity of 0.3 A/W at 560 nm under zero bias. Dark current is specified at 0.6 pA at 1 V reverse bias, with a temperature coefficient of −0.01 %/°C. The terminal capacitance is 700 pF at 0 V bias, and rise time is 2.5 μs with a 1 kΩ load. It operates within a temperature range of −10 to +60 °C and accepts a maximum reverse voltage of 10 V. The shunt resistance exceeds 100 GΩ at room temperature.

Datasheet Summary
Powered by GS/AI

The S16838-01MS is a silicon photodiode with a premolded plastic package designed to block stray light, optimized for visible-range illumination measurement. It has a photosensitive area of 2.8 × 2.4 mm, a spectral peak response at 560 nm, and a photosensitivity of 0.3 A/W at 560 nm under zero bias. Dark current is specified at 0.6 pA at 1 V reverse bias, with a temperature coefficient of −0.01 %/°C. The terminal capacitance is 700 pF at 0 V bias, and rise time is 2.5 μs with a 1 kΩ load. It operates within a temperature range of −10 to +60 °C and accepts a maximum reverse voltage of 10 V. The shunt resistance exceeds 100 GΩ at room temperature.

Suppliers

Company
Product
Description
Supplier Links
Si photodiodes - S16838-01MS - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S16838-01MS
Si photodiodes S16838-01MS
Low dark current, premolded packages These are photodiodes that offer low dark current to measure low to high illumination with high accuracy. The premolded package is designed to block stray light from the side and back of the package to reaching the photosensitive area. Features - S16838-01MS: For visible range - S16838/S16840-02MS: For visible to IR range - S16765-01MS: For v isible to near IR range

Low dark current, premolded packages

These are photodiodes that offer low dark current to measure low to high illumination with high accuracy. The premolded package is designed to block stray light from the side and back of the package to reaching the photosensitive area.

Features
- S16838-01MS: For visible range
- S16838/S16840-02MS: For visible to IR range
- S16765-01MS: For v isible to near IR range

Supplier's Site Datasheet
Photodiodes - 482441 - RS Components, Ltd.
Corby, Northants, United Kingdom
Photodiodes
482441
Photodiodes 482441
Photodiode

Photodiode

Supplier's Site

Technical Specifications

  Hamamatsu Photonics Europe RS Components, Ltd.
Product Category Photodiodes Photodiodes
Product Number S16838-01MS 482441
Product Name Si photodiodes Photodiodes
Photodiode Spectral Response Visible Visible
Spectral Response Range 320 to 730 nm (3200 to 7300 Å) 320 to 1100 nm (3200 to 11000 Å)
Peak Sensitivity Wavelength 560 nm (5600 Å) 560 nm (5600 Å)
Photodiode Material Silicon
Active Area Diameter or Length 2.4 mm (0.0945 inch)
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