Hamamatsu Photonics Europe Si APDs S12023-02

Description
Low bias operation, for 800 nm band This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.
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Description
Low bias operation, for 800 nm band This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.
Request a Quote Datasheet

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Si APDs - S12023-02 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si APDs
S12023-02
Si APDs S12023-02
Low bias operation, for 800 nm band This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.

Low bias operation, for 800 nm band

This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S12023-02
Product Name Si APDs
Photodiode Type Avalanche Photodiode
Photodiode Spectral Response IR
Spectral Response Range 400 to 1000 nm (4000 to 10000 Å)
Peak Sensitivity Wavelength 800 nm (8000 Å)
Photodiode Material Silicon
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