The S12023-02 is a silicon avalanche photodiode designed for near-infrared detection at 800 nm with low bias operation up to 200 V, suitable for free space optics and optical rangefinders. It is housed in a TO-18 package with a 0.2 mm diameter photosensitive area and operates within a temperature range of -20 to +85 °C. The device has a typical breakdown voltage of 100 V, a terminal capacitance of 0.05 pF at M=1, and a dark current of 1 nA at 160 V reverse bias. It supports high-speed response and low noise performance under gain conditions of M=100. The package includes a borosilicate glass window and is rated for storage temperatures from -55 to +125 °C with a maximum forward current of 10 mA and reverse current of 200 µA.
Low bias operation, for 800 nm band
This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.
| Hamamatsu Photonics Europe | |
|---|---|
| Product Category | Photodiodes |
| Product Number | S12023-02 |
| Product Name | Si APDs |
| Photodiode Type | Avalanche Photodiode |
| Photodiode Spectral Response | IR |
| Spectral Response Range | 400 to 1000 nm (4000 to 10000 Å) |
| Peak Sensitivity Wavelength | 800 nm (8000 Å) |
| Photodiode Material | Silicon |
