Hamamatsu Photonics Europe Si APDs S2385

Description
Low bias operation, for 800 nm band
Request a Quote Datasheet
Description
Low bias operation, for 800 nm band
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Si APDs - S2385 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si APDs
S2385
Si APDs S2385
Low bias operation, for 800 nm band

Low bias operation, for 800 nm band

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S2385
Product Name Si APDs
Photodiode Type Avalanche Photodiode
Spectral Response Range 400 to 1000 nm (4000 to 10000 Å)
Peak Sensitivity Wavelength 800 nm (8000 Å)
Photodiode Material Silicon
Unlock Full Specs
to access all available technical data

Similar Products

Si APDs - S12053-05 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type Avalanche Photodiode
Spectral Response Range 200 to 1000 nm (2000 to 10000 Å)
Peak Sensitivity Wavelength 620 nm (6200 Å)
View Details
2 suppliers
InGaAs photodiodes - G12183-130K - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Spectral Response Range 900 to 2570 nm (9000 to 25700 Å)
Peak Sensitivity Wavelength 2300 nm (23000 Å)
Photodiode Material Indium Gallium Arsenide
View Details
Linear InGaAs photodiode arrays - G12430-032D - Hamamatsu Photonics Europe
Specs
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Photodiode Material Indium Gallium Arsenide
View Details
Segmented Si photodiodes - S5870 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Spectral Response Range 320 to 1100 nm (3200 to 11000 Å)
Peak Sensitivity Wavelength 960 nm (9600 Å)
Photodiode Material Silicon
View Details