The S13885-256G is a photodiode array with integrated CMOS signal processing for X-ray detection, featuring a Gd2O2S:Tb phosphor sheet (300 µm thick) sensitive to 30-100 keV X-rays. It has 256 elements with a 0.2 mm pitch, forming a 51.2 mm active length. Operated at 3.3 V, it supports a maximum clock frequency of 4000 kHz and a line rate of 3844 lines per second. The device includes charge amplifiers, a clamp circuit, and a timing generator to simplify external circuitry. Packaged on a G10 glass epoxy board with a JAE PS-26PE-D4LT1-PN1 connector, the photosensitive area is 1.0 mm from the board bottom. Operating temperature ranges from -5 to +60 °C; storage from -10 to +70 °C. In high gain mode, it delivers 1000 V/lx·s photosensitivity and 0.6 mV rms readout noise.
Photodiode arrays combined with signal processing IC for X-ray detection
The S13885 series are photodiode arrays with amplifirs having a phosphor sheet attached to the photosensitive area for X-ray detection. Improvement in the signal processing IC chip has achieved higher sensitivity compared to the previous products (S11865 series). The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifir array, clamp circuit and hold circuit, making the external circuit confguration simple. A long and narrow image sensor can be confgured by arranging multiple arrays in a row.
| Hamamatsu Photonics Europe | |
|---|---|
| Product Category | Photodiodes |
| Product Number | S13885-256G |
| Product Name | Si photodiode arrays with amplifier |
| Photodiode Spectral Response | X-ray |
