Hamamatsu Photonics Europe InGaAs photodiodes G12181-120K

Description
Long wavelength type (cutoff wavelength: 1.87 μm) Features - Cutoff wavelength: 1.87 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity - High reliability - High-speed response
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Description
Long wavelength type (cutoff wavelength: 1.87 μm) Features - Cutoff wavelength: 1.87 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity - High reliability - High-speed response
Request a Quote
Datasheet
Datasheet Summary
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The G12181-120K is a one-stage thermoelectrically cooled InGaAs PIN photodiode with a photosensitive area of 2 mm diameter and a cutoff wavelength of 1.87 μm. It is packaged in a TO-8 case and operates with a chip temperature of -10 °C, maintaining a dark current of 5 nA maximum at VR=0.5 V and a spectral response peak sensitivity of 0.9 A/W at 1.87 μm. The device has a terminal capacitance of 900 pF typ. at VR=0 V, a shunt resistance of 2.8 MΩ typ. at VR=10 mV, and a detectivity of 2.8 × 10^12 cm·Hz^1/2/W typ. Its operating temperature range is -40 to +70 °C, with storage temperatures from -55 to +85 °C, and it includes a thermistor with a resistance of 50 kΩ at +25 °C.

Datasheet Summary
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The G12181-120K is a one-stage thermoelectrically cooled InGaAs PIN photodiode with a photosensitive area of 2 mm diameter and a cutoff wavelength of 1.87 μm. It is packaged in a TO-8 case and operates with a chip temperature of -10 °C, maintaining a dark current of 5 nA maximum at VR=0.5 V and a spectral response peak sensitivity of 0.9 A/W at 1.87 μm. The device has a terminal capacitance of 900 pF typ. at VR=0 V, a shunt resistance of 2.8 MΩ typ. at VR=10 mV, and a detectivity of 2.8 × 10^12 cm·Hz^1/2/W typ. Its operating temperature range is -40 to +70 °C, with storage temperatures from -55 to +85 °C, and it includes a thermistor with a resistance of 50 kΩ at +25 °C.

Suppliers

Company
Product
Description
Supplier Links
InGaAs photodiodes - G12181-120K - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
InGaAs photodiodes
G12181-120K
InGaAs photodiodes G12181-120K
Long wavelength type (cutoff wavelength: 1.87 μm) Features - Cutoff wavelength: 1.87 μm - One-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity - High reliability - High-speed response

Long wavelength type (cutoff wavelength: 1.87 μm)

Features
- Cutoff wavelength: 1.87 μm
- One-stage TE-cooled
- Low cost
- Photosensitive area: φ2 mm
- Low noise
- High sensitivity
- High reliability
- High-speed response

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number G12181-120K
Product Name InGaAs photodiodes
Spectral Response Range 900 to 1870 nm (9000 to 18700 Å)
Peak Sensitivity Wavelength 1750 nm (17500 Å)
Photodiode Material Indium Gallium Arsenide
Active Area Diameter or Length 2 mm (0.0787 inch)
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