Hamamatsu Photonics Europe Si photodiodes S1226-44BK

Description
For UV to visible, precision photometry; suppressed near IR sensitivity Features - High UV sensitivity: QE=75 % (λ=200 nm) - Suppressed near IR sensitivity - Low dark current - High reliability
Request a Quote Datasheet
Description
For UV to visible, precision photometry; suppressed near IR sensitivity Features - High UV sensitivity: QE=75 % (λ=200 nm) - Suppressed near IR sensitivity - Low dark current - High reliability
Request a Quote Datasheet

Suppliers

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Description
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Si photodiodes - S1226-44BK - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S1226-44BK
Si photodiodes S1226-44BK
For UV to visible, precision photometry; suppressed near IR sensitivity Features - High UV sensitivity: QE=75 % (λ=200 nm) - Suppressed near IR sensitivity - Low dark current - High reliability

For UV to visible, precision photometry; suppressed near IR sensitivity

Features
- High UV sensitivity: QE=75 % (λ=200 nm)
- Suppressed near IR sensitivity
- Low dark current
- High reliability

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S1226-44BK
Product Name Si photodiodes
Photodiode Spectral Response UV; Visible
Spectral Response Range 320 to 1000 nm (3200 to 10000 Å)
Peak Sensitivity Wavelength 720 nm (7200 Å)
Photodiode Material Silicon
Active Area Diameter or Length 3.6 mm (0.1417 inch)
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