Low temperature coefficient, for 800 nm band
This is a 800 nm band near-infrared Si APD that can operate stably over a wide temperature range. This is suitable for applications such as optical rangefinders and FSO (free space optics).
Features
- Temperature coefficient of breakdown voltage: 0.4 V/℃
- High-speed response
- High sensitivity and low noise
| Hamamatsu Photonics Europe | |
|---|---|
| Product Category | Photodiodes |
| Product Number | S12060-10 |
| Product Name | Si APDs |
| Photodiode Type | Avalanche Photodiode |
| Photodiode Spectral Response | IR |
| Spectral Response Range | 400 to 1000 nm (4000 to 10000 Å) |
| Peak Sensitivity Wavelength | 800 nm (8000 Å) |
| Photodiode Material | Silicon |
