Hamamatsu Photonics Europe InGaAs photodiodes G12181-030K

Description
Long wavelength type (cutoff wavelength: 1.9 μm) Features - Cutoff wavelength: 1.9 μm - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity - High reliability - High-speed response
Request a Quote Datasheet
Description
Long wavelength type (cutoff wavelength: 1.9 μm) Features - Cutoff wavelength: 1.9 μm - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity - High reliability - High-speed response
Request a Quote Datasheet

Suppliers

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Description
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InGaAs photodiodes - G12181-030K - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
InGaAs photodiodes
G12181-030K
InGaAs photodiodes G12181-030K
Long wavelength type (cutoff wavelength: 1.9 μm) Features - Cutoff wavelength: 1.9 μm - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity - High reliability - High-speed response

Long wavelength type (cutoff wavelength: 1.9 μm)

Features
- Cutoff wavelength: 1.9 μm
- Low cost
- Photosensitive area: φ3 mm
- Low noise
- High sensitivity
- High reliability
- High-speed response

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number G12181-030K
Product Name InGaAs photodiodes
Spectral Response Range 900 to 1900 nm (9000 to 19000 Å)
Peak Sensitivity Wavelength 1750 nm (17500 Å)
Photodiode Material Indium Gallium Arsenide
Active Area Diameter or Length 3 mm (0.1181 inch)
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