Hamamatsu Photonics Europe InGaAs photodiodes G8370-85

Description
Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-85 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.
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Description
Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-85 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.
Request a Quote Datasheet

Suppliers

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InGaAs photodiodes - G8370-85 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
InGaAs photodiodes
G8370-85
InGaAs photodiodes G8370-85
Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-85 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.

Low PDL (Polarization Dependence Loss)

InGaAs PIN photodiode G8370-85 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number G8370-85
Product Name InGaAs photodiodes
Photodiode Type PIN Photodiode
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Photodiode Material Indium Gallium Arsenide
Active Area Diameter or Length 5 mm (0.1969 inch)
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