Hamamatsu Photonics Europe Si photodiodes S8745-01

Description
Photodiode and preamp integrated with feedback resistance and capacitance This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features - Use low power consumption FET input operational amplifier - Built-in Rf=1 GΩ and Cf=5 pF - Variable gain with an externally connected resistor - Low noise, low NEP - Package with shielding effect - Highly resistance to EMC noise
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Description
Photodiode and preamp integrated with feedback resistance and capacitance This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features - Use low power consumption FET input operational amplifier - Built-in Rf=1 GΩ and Cf=5 pF - Variable gain with an externally connected resistor - Low noise, low NEP - Package with shielding effect - Highly resistance to EMC noise
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Suppliers

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Si photodiodes - S8745-01 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S8745-01
Si photodiodes S8745-01
Photodiode and preamp integrated with feedback resistance and capacitance This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features - Use low power consumption FET input operational amplifier - Built-in Rf=1 GΩ and Cf=5 pF - Variable gain with an externally connected resistor - Low noise, low NEP - Package with shielding effect - Highly resistance to EMC noise

Photodiode and preamp integrated with feedback resistance and capacitance

This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise.

Features
- Use low power consumption FET input operational amplifier
- Built-in Rf=1 GΩ and Cf=5 pF
- Variable gain with an externally connected resistor
- Low noise, low NEP
- Package with shielding effect
- Highly resistance to EMC noise

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S8745-01
Product Name Si photodiodes
Spectral Response Range 190 to 1100 nm (1900 to 11000 Å)
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