The S12023-10 is a silicon avalanche photodiode for near-infrared operation at 800 nm, designed for low-bias applications up to 200 V, such as free space optics and optical rangefinders. It is housed in a TO-18 package with a 1.0 mm diameter photosensitive area. The device operates with a typical breakdown voltage of 150 V and a maximum of 200 V, with a dark current of 100 nA at 100 µA gain. It has a terminal capacitance of 6 pF, a cutoff frequency of 60 MHz, and an excess noise factor of 0.25 at M=100. Operating temperature ranges from -20 °C to +85 °C, with a storage temperature from -55 °C to +125 °C. The part includes an aluminum light-shielded variant (S12023-10A) excluding the photosensitive area.
Low bias operation, for 800 nm band
This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.
| Hamamatsu Photonics Europe | RS Components, Ltd. | |
|---|---|---|
| Product Category | Photodiodes | Photodiodes |
| Product Number | S12023-10 | 482423 |
| Product Name | Si APDs | Photodiodes |
| Photodiode Type | Avalanche Photodiode | |
| Photodiode Spectral Response | IR | |
| Spectral Response Range | 400 to 1000 nm (4000 to 10000 Å) | 400 to 1000 nm (4000 to 10000 Å) |
| Peak Sensitivity Wavelength | 800 nm (8000 Å) | 800 nm (8000 Å) |
| Photodiode Material | Silicon |
