The S1223 is a silicon photodiode designed for high sensitivity in the visible to near-infrared range, with a spectral response from 320 to 1100 nm and a peak sensitivity wavelength of 960 nm. It features a photosensitive area of 2.4 mm x 2.8 mm and an effective photosensitive area of 6.6 mm¬=. The device operates with a maximum reverse voltage of 30 V and can handle power dissipation up to 100 mW. The S1223 has a cutoff frequency of 30 MHz and a low terminal capacitance of 10 pF at a reverse voltage of 20 V, making it suitable for high-speed applications. The dark current is minimal, with a typical value of 0.1 nA at 20 V. It operates effectively within a temperature range of -40 to +100 ¬8C and can be stored at temperatures between -55 and +125 ¬8C. This photodiode is suitable for applications in optical measurement equipment and analytical devices, providing reliable performance for precision photometry tasks.
For visible to near IR, precision photometry
Features
- High sensitivity in visible to near infrared range
- High reliability
- High-speed response: fc=30 MHz
- Low capacitance
Si PIN Photodiode 320-1100nm Metal TO-5
| Hamamatsu Photonics Europe | RS Components, Ltd. | |
|---|---|---|
| Product Category | Photodiodes | Photodiodes |
| Product Number | S1223 | 1247161 |
| Product Name | Si photodiodes | Photodiodes |
| Photodiode Spectral Response | Visible; IR | Visible; IR |
| Spectral Response Range | 320 to 1100 nm (3200 to 11000 Å) | 320 to 1100 nm (3200 to 11000 Å) |
| Peak Sensitivity Wavelength | 960 nm (9600 Å) | 960 nm (9600 Å) |
| Photodiode Material | Silicon | Silicon; Si |
| Active Area Diameter or Length | 2.4 mm (0.0945 inch) |
