Hamamatsu Photonics Europe Si APDs S6045-06

Description
Low temperature coefficient type APD for 800 nm band
Request a Quote Datasheet
Description
Low temperature coefficient type APD for 800 nm band
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Si APDs - S6045-06 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si APDs
S6045-06
Si APDs S6045-06
Low temperature coefficient type APD for 800 nm band

Low temperature coefficient type APD for 800 nm band

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S6045-06
Product Name Si APDs
Photodiode Type Avalanche Photodiode
Spectral Response Range 400 to 1000 nm (4000 to 10000 Å)
Peak Sensitivity Wavelength 800 nm (8000 Å)
Photodiode Material Silicon
Unlock Full Specs
to access all available technical data

Similar Products

InGaAs photodiodes - G14448-003L - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Spectral Response IR
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
View Details
Photodiode modules - C10439-02 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Spectral Response Range 190 to 1100 nm (1900 to 11000 Å)
Peak Sensitivity Wavelength 960 nm (9600 Å)
Active Area Diameter or Length 5.8 mm (0.2283 inch)
View Details
Si photodiodes - S6801-01 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type PIN Photodiode
Photodiode Spectral Response Visible
Spectral Response Range 700 to 1100 nm (7000 to 11000 Å)
View Details
Si APDs - S8664-20K - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type Avalanche Photodiode
Spectral Response Range 320 to 1000 nm (3200 to 10000 Å)
Peak Sensitivity Wavelength 600 nm (6000 Å)
View Details