Hamamatsu Photonics Europe Si photodiodes S1336-44BK

Description
UV to near IR for precision photometry Features - High sensitivity in UV range - Low capacitance - High reliability
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Description
UV to near IR for precision photometry Features - High sensitivity in UV range - Low capacitance - High reliability
Request a Quote
Datasheet
Datasheet Summary
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The S1336-44BK is a silicon photodiode designed for precision photometry across the UV to near-infrared spectrum, featuring a borosilicate glass window, a photosensitive area of 3.6 mm × 3.6 mm, and a TO-5 package. It operates within a temperature range of -40 °C to +100 °C and has a spectral response range of 320 nm to 1100 nm. Electrical characteristics include a peak photosensitivity of 0.10 A/W at 633 nm, a dark current of 0.5 nA at 10 mV reverse voltage, a terminal capacitance of 0.33 pF, and a shunt resistance of 1.15 GΩ at 10 mV. Its noise equivalent power is 1.0 × 10⁻¹⁴ W/Hz¹/² and its rise time is 150 μs. Dew condensation must be avoided during operation.

Datasheet Summary
Powered by GS/AI

The S1336-44BK is a silicon photodiode designed for precision photometry across the UV to near-infrared spectrum, featuring a borosilicate glass window, a photosensitive area of 3.6 mm × 3.6 mm, and a TO-5 package. It operates within a temperature range of -40 °C to +100 °C and has a spectral response range of 320 nm to 1100 nm. Electrical characteristics include a peak photosensitivity of 0.10 A/W at 633 nm, a dark current of 0.5 nA at 10 mV reverse voltage, a terminal capacitance of 0.33 pF, and a shunt resistance of 1.15 GΩ at 10 mV. Its noise equivalent power is 1.0 × 10⁻¹⁴ W/Hz¹/² and its rise time is 150 μs. Dew condensation must be avoided during operation.

Suppliers

Company
Product
Description
Supplier Links
Si photodiodes - S1336-44BK - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S1336-44BK
Si photodiodes S1336-44BK
UV to near IR for precision photometry Features - High sensitivity in UV range - Low capacitance - High reliability

UV to near IR for precision photometry

Features
- High sensitivity in UV range
- Low capacitance
- High reliability

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S1336-44BK
Product Name Si photodiodes
Photodiode Spectral Response UV
Spectral Response Range 320 to 1100 nm (3200 to 11000 Å)
Peak Sensitivity Wavelength 960 nm (9600 Å)
Photodiode Material Silicon
Active Area Diameter or Length 3.6 mm (0.1417 inch)
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