The S4114-35Q is a 35-element silicon photodiode linear array in a 40-pin ceramic DIP package, designed for low-light-level detection from UV to near-infrared wavelengths. Each element has a photosensitive area of 1.35 mm in length with a 0.1 mm gap between elements. The array features a spectral response range of 190 to 1000 nm, with a peak sensitivity at 800 nm and a spectral responsivity of 0.50 A/W at 633 nm. It exhibits low terminal capacitance of 20 pF at 10 V reverse bias and a rise time of 0.05 µs, enabling high-speed response. Dark current is 0.15 pA at 10 mV reverse bias and 2 pA at 10 V reverse bias. The operating temperature range is -20 to +60 °C, and storage temperature is -20 to +80 °C. Crosstalk between elements is minimized for signal purity.
35-element Si photodiode array for UV to NIR
The S4114-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, The S4114-35Q is able to detect low level light with high sensitivity. Cross-talk between elements is minimized to maintain signal purity. Special filters can be attached as the input window (custom order products).
| Hamamatsu Photonics Europe | |
|---|---|
| Product Category | Photodiodes |
| Product Number | S4114-35Q |
| Product Name | Si photodiode arrays |
| Photodiode Spectral Response | UV; IR |
| Spectral Response Range | 190 to 1000 nm (1900 to 10000 Å) |
| Peak Sensitivity Wavelength | 800 nm (8000 Å) |
| Photodiode Material | Silicon |
| Array | Array |
