Hamamatsu Photonics Europe InGaAs photodiodes G12182-203K

Description
Long wavelength type (cutoff wavelength: 2.05 μm) Features - Cutoff wavelength: 2.05 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity - High reliability - High-speed response
Request a Quote Datasheet
Description
Long wavelength type (cutoff wavelength: 2.05 μm) Features - Cutoff wavelength: 2.05 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity - High reliability - High-speed response
Request a Quote Datasheet

Suppliers

Company
Product
Description
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InGaAs photodiodes - G12182-203K - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
InGaAs photodiodes
G12182-203K
InGaAs photodiodes G12182-203K
Long wavelength type (cutoff wavelength: 2.05 μm) Features - Cutoff wavelength: 2.05 μm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity - High reliability - High-speed response

Long wavelength type (cutoff wavelength: 2.05 μm)

Features
- Cutoff wavelength: 2.05 μm
- Two-stage TE-cooled
- Low cost
- Photosensitive area: φ0.3 mm
- Low noise
- High sensitivity
- High reliability
- High-speed response

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number G12182-203K
Product Name InGaAs photodiodes
Spectral Response Range 900 to 2050 nm (9000 to 20500 Å)
Peak Sensitivity Wavelength 1950 nm (19500 Å)
Photodiode Material Indium Gallium Arsenide
Active Area Diameter or Length 0.3000 mm (0.0118 inch)
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