Nexperia B.V. Datasheets for Power MOSFET

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more

Product Name	Notes
BCP53T115 BSR30,115 BSR30-QX BUK6212-40C,118 BUK6607-55C,118 BUK661R8-30C,118 BUK663R2-40C,118 BUK663R7-75C,118 BUK664R6-40C,118 BUK6E2R3-40C,127 BUK6E4R0-75C,127 BUK7275-100A,118 BUK7509-55A,127 BUK752R3-40E,127 BUK753R1-40E,127 BUK762R0-40E,118 BUK7631-100E,118 BUK769R6-80E,118 BUK7E13-60E,127 BUK7E2R3-40E,127 BUK7E3R1-40E,127 BUK7E4R6-60E,127 BUK7E8R3-40E,127 BUK7Y18-55B,115 BUK9245-55A/C1,118 BUK9515-100A,127 BUK9605-30A,118 BUK9606-55B,118 BUK9615-100E,118 BUK962R6-40E,118 BUK962R8-60E,118 BUK963R1-40E,118 BUK964R1-40E,118 PBSS4021SP,115 PHB18NQ10T,118 PHB20NQ20T,118 PHP9NQ20T,127 PMPB13UPX PMPB13XNE/S500,X PMPB43XPE,115 PSMN013-100BS,118 PSMN017-30EL,127 PSMN017-30PL,127 PSMN3R3-80ES,127 PSMN3R5-80ES,127 PSMN4R3-80ES,127 PSMN7R0-100ES,127 PSMN8R5-100ESFQ PSMN8R7-100YSFX PSMN8R7-80PS,127
N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E -- PSMN2R0-55YLHX	200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s...
N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN1R0-30YLDX	300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs...
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56 -- BUK7Y1R7-40HX N-channel 40 V, 2.5 mΩ standard level MOSFET in LFPAK56 -- BUK7Y2R5-40HX N-channel 40 V, 3.0 mΩ standard level MOSFET in LFPAK56 -- BUK7Y3R0-40HX N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56 -- BUK7Y3R5-40HX	Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101...
Dual N-channel 80 V, 20 mΩ logic level MOSFET -- BUK9K20-80EX	Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive...
N-channel 25 V 0.99 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN0R9-25YLC,115 N-channel 25 V 1.15 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R1-25YLC,115 N-channel 25 V, 6.5 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN6R5-25YLC,115 N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology -- PSMN011-30YLC,115 N-channel 30 V 13.6 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN013-30YLC,115 N-channel 30 V, 7.1 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN7R0-30YLC,115 N-channel 40 V 1.8 mOhm logic level MOSFET in LFPAK using NextPower technology -- PSMN1R8-40YLC,115	Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits...
N-channel 30 V 18.1 mOhm logic level MOSFET in LFPAK33 using TrenchMOS Technology -- PSMN020-30MLCX	Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits...
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 -- PSMN038-100YLX	Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and...
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology -- PSMN0R9-25YLDX	Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an...
N-channel TrenchMOS logic level FET -- BUK9640-100A,118 N-channel TrenchMOS logic level FET -- BUK9675-55A,118	Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in...
N-channel TrenchMOS logic level FET -- BUK9637-100E,118 N-channel TrenchMOS logic level FET -- BUK969R0-60E,118 N-channel TrenchMOS logic level FET -- BUK969R3-100E,118	Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. Features and...
N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 -- BUK9Y153-100E,115 N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 -- BUK9Y19-100E,115 N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56 -- BUK9Y8R5-80EX N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 -- BUK9Y14-80E,115	Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive...
N-channel 60 V, 6.0 mOhm logic level MOSFET in LFPAK56 -- BUK9Y6R0-60E,115	Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56 -- PSMN021-100YLX N-channel 80 V, 14 mΩ logic level MOSFET in LFPAK56 -- PSMN014-80YLX	Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor...
30 V, N-channel Trench MOSFET -- PMN30UNH	N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very...
NextPower 100 V, 5.6 mOhm N-channel MOSFET in LFPAK56 package -- PSMN5R5-100YSFX	NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower...
NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package -- PSMN3R5-80YSFX	NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower...
60 V, 1 A NPN medium power transistor -- BSR41-QF 60 V, 1 A NPN medium power transistor -- BSR41-QX	NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR31-Q. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)...
80 V, 1 A NPN medium power transistor -- BSR43-QX	NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33-Q. Features and benefits High current (max. 1 A) Low voltage (max. 80 V)...
45 V, 4 A NPN high power bipolar transistor -- MJD148-QJ 45 V, 4 A NPN high power bipolar transistor -- MJD148J 50 V, 2 A NPN high power bipolar transistor -- MJD2873J	NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less...
60V, 3 A NPN high power bipolar transistor -- PHPT60603NYX	NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY Features and benefits High thermal power dissipation capability High temperature applications up...
60 V, 10 A NPN high power bipolar transistor -- PHPT60610NYX	NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY Features and benefits High thermal power dissipation capability High temperature applications up...
60 V, 1 A NPN low VCEsat BISS transistor -- PBSS4160XX	NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage...
20 V, 3 A NPN low VCEsat (BISS) transistor -- 2PD2150,115	NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: 2PB1424. Features and benefits Low...
30 V, 3 A NPN low VCEsat (BISS) transistor -- PBSS4330PA,115	NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5330PA.
20 V, 8 A NPN low VCEsat transistor -- PBSS4021NZ,115	NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PZ Features and benefits Very low collector-emitter saturation voltage VCEsat High...
60 V, 7 A NPN low VCEsat transistor -- PBSS4041NZ,115	NPN low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ Features and benefits Very low collector-emitter saturation voltage VCEsat High...
60 V, 3 A NPN low VCEsat transistor -- PBSS4360XX	NPN low VCEsat transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5360X Features and benefits Low collector-emitter saturation voltage VCEsat...
20 V, 2 A NPN medium power transistors -- BC68-25PA-QX 20 V, 2 A NPN medium power transistors -- BC68PA-QX	NPN medium power transistor in a SOT1061 (DFN2020-3) leadless very small Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Two current...
20 V, 2 A NPN medium power transistor -- BC68PA,115	NPN medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. PNP complement: BC69PA. Features and benefits High current Two current gain selections High power dissipation...
45 V, 1 A NPN medium power transistors -- BC54-10PA,115	NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current...
60 V, 1 A NPN medium power transistors -- BC55-16PA,115	NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed...
60 V, 1 A NPN medium power transistors -- BC55-10PAS-QX	NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features...
45 V, 1 A NPN medium power transistors -- BCP54-10TF 45 V, 1 A NPN medium power transistors -- BCP54-16TF 45 V, 1 A NPN medium power transistors -- BCP54TF	NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain...
60 V, 1 A NPN medium power transistors -- BCP55-10TF 60 V, 1 A NPN medium power transistors -- BCP55-16TF 60 V, 1 A NPN medium power transistors -- BCP55TF 80 V, 1 A NPN medium power transistors -- BCP56-10TF 80 V, 1 A NPN medium power transistors -- BCP56-10TX 80 V, 1 A NPN medium power transistors -- BCP56TX	NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain...
20 V, 2 A NPN medium power transistors -- BC868-25-QX	NPN medium power transistors in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Two current gain...
45 V, 1 A NPN medium power transistors -- BCP54-QX	NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain...
45 V, 1 A NPN medium power transistors -- BCX54-10,115	NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain...
60 V, 1 A NPN medium power transistors -- BCX55,135 60 V, 1 A NPN medium power transistors -- BCX55-10-QX	NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink...
80 V, 1 A NPN medium power transistors -- BCX56,115 80 V, 1 A NPN medium power transistors -- BCX56,135 80 V, 1 A NPN medium power transistors -- BCX56-10,135 80 V, 1 A NPN medium power transistors -- BCX56-16,135	NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package Features and benefits High collector current capability IC and ICM Three current gain...
45 V, 1 A NPN power bipolar transistors -- BCX54-10TF 60 V, 1 A NPN power bipolar transistors -- BCX55-10TF 60 V, 1 A NPN power bipolar transistors -- BCX55-16TF 80 V, 1 A NPN power bipolar transistors -- BCX56TF 80 V, 1 A NPN power bipolar transistors -- BCX56TX	NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain...
30 V, 230 mA P-channel Trench MOSFET -- NX3008PBKVL	P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Low threshold voltage Trench...
100 V, 3 A PNP high power bipolar transistor -- MJD32CJ	PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 3 A PNP high power bipolar transistor -- MJD32CAJ	PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA Features and benefits High thermal power dissipation capability High energy efficiency...
100 V, 6 A PNP high power bipolar transistor -- MJD42CJ	PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD41C Features and benefits High thermal power dissipation capability High energy efficiency...
400 V, 0.5 A PNP high-voltage low VCEsa transistor -- PBHV9540XF 400 V, 0.5 A PNP high-voltage low VCEsa transistor -- PBHV9540XX	PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X Features and benefits High voltage Low collector-emitter...
30 V, 3 A PNP low VCEsat (BISS) transistor -- PBSS5330PA,135	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA.
30 V, 6 A PNP low VCEsat (BISS) transistor -- PBSS5630PA,115	PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4630PA.
20 V, 6.2 A PNP low VCEsat transistor -- PBSS4021PX,115	PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NX Features and benefits Very low collector-emitter saturation voltage...
30 V, 4.4 A PNP low VCEsat transistor -- PBSS4032PZ,115	PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NZ Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching...
50 V, 3 A PNP low VCEsat transistor -- PBSS5350Z,135	PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
60 V, 3 A PNP low VCEsat transistor -- PBSS5360Z-QX 60 V, 3 A PNP low VCEsat transistor -- PBSS5360ZX	PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360Z Features and benefits Low collector-emitter saturation voltage VCEsat High collector...
50 V, 2 A PNP low VCEsat transistor -- PBSS5250THR	PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC...
50 V, 3 A PNP low VCEsat transistor -- PBSS5350D,135	PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D Features and benefits Low collector-emitter saturation voltage VCEsat High current capability...
30 V, 3 A PNP low VCEsat transistor -- PBSS5330XZ	PNP low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.. Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage V...
60 V, 3 A PNP low VCEsat transistor -- PBSS5360XF 60 V, 3 A PNP low VCEsat transistor -- PBSS5360XX	PNP low VCEsat transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360X Features and benefits Low collector-emitter saturation voltage VCEsat...
20 V, 2 A PNP medium power transistors -- BC869,115 20 V, 2 A PNP medium power transistors -- BC869-16,115 20 V, 2 A PNP medium power transistors -- BC869-25,115	PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BC868. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink...
60 V, 1 A PNP medium power transistor -- BSR31,115	PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR41 Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and...
80 V, 1 A PNP medium power transistor -- BSR33-QF 80 V, 1 A PNP medium power transistor -- BSR33-QX	PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43-Q Features and benefits High current High power dissipation capability Exposed heatsink for excellent thermal and...
80 V, 1 A PNP medium power transistors -- BCP53-16TX 80 V, 1 A PNP medium power transistors -- BCP53TF 80 V, 1 A PNP medium power transistors -- BCP53TX	PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High...
45 V, 1 A PNP medium power transistors -- BCP51-10TF 60 V, 1 A PNP medium power transistors -- BCP52-10TF 60 V, 1 A PNP medium power transistors -- BCP52-16TF 60 V, 1 A PNP medium power transistors -- BCP52TF	PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain...
45 V, 1 A PNP medium power transistors -- BCX51-10F	PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink...
45 V, 1 A PNP power bipolar transistors -- BCX51-10TF 45 V, 1 A PNP power bipolar transistors -- BCX51TF 60 V, 1 A PNP power bipolar transistors -- BCX52-10TF 60 V, 1 A PNP power bipolar transistors -- BCX52TF 80 V, 1 A PNP power bipolar transistors -- BCX53TF 80 V, 1 A PNP power bipolar transistors -- BCX53TX	PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain...
60 V, 1 A PNP/PNP low VCEsat double transistor -- PBSS5160PAP,115	PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN. Features and...
N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK -- PSMN5R6-100BS,118	Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
N-channel LFPAK 60 V 15.7 mOhm standard level MOSFET -- PSMN017-60YS,115 N-channel LFPAK 60 V 24.7 mOhm standard level MOSFET -- PSMN030-60YS,115	Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features...

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