Nexperia B.V. BCP53T115

Description
80 V, 1 A PNP medium power transistors
Request a Quote
Description
80 V, 1 A PNP medium power transistors
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

80 V, 1 A PNP medium power transistor in a SOT223 (SC-73) surface-mounted package, with a peak collector current of 2 A and a total power dissipation up to 1.8 W depending on PCB configuration. The device is AEC-Q101 qualified and suitable for applications such as linear voltage regulators, MOSFET drivers, and high-side switches.

Datasheet Summary
Powered by GS/AI

80 V, 1 A PNP medium power transistor in a SOT223 (SC-73) surface-mounted package, with a peak collector current of 2 A and a total power dissipation up to 1.8 W depending on PCB configuration. The device is AEC-Q101 qualified and suitable for applications such as linear voltage regulators, MOSFET drivers, and high-side switches.

Suppliers

Company
Product
Description
Supplier Links
 - BCP53T115 - Rochester Electronics
Newburyport, MA, United States
80 V, 1 A PNP medium power transistors

80 V, 1 A PNP medium power transistors

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number BCP53T115
Package Type SOT223; SOT-223
Unlock Full Specs
to access all available technical data