Power MOSFET Datasheets

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
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Power MOSFET Datasheets From:
Headquarters
Fuji Electric Corp. of America
United States
Infineon Technologies AG
Germany
Richardson RFPD
United States
Texas Instruments
United States
Win Source Electronics
United States
Skyworks Solutions, Inc.
United States
Integra Technologies, Inc.
El Segundo, CA
Karl Kruse GmbH & Co. KG
Germany
ROHM Semiconductor GmbH
Germany
ROHM Semiconductor USA, LLC
Santa Clara, CA
Solid State Devices, Inc.
La Mirada, CA
Twilight Technology Inc.
Anaheim, CA
Universal Semiconductor, Inc.
San Jose, CA
Utmel Electronic Limited
China
Advanced Semiconductor, Inc.
United States
Advanced Thermal Solutions, Inc.
United States
Allied Electronics, Inc.
Fort Worth, TX
Ampleon
United States
DIODES Incorporated
United States
Fuji Electric Global
Japan
IXYS Corporation
United States
JCET Group
Milpitas, CA
Kexin Co., Ltd.
China
Leshan Radio Company, Ltd.
China
Microchip Technology, Inc.
United States
Microsemi Corp.
United States
Mitsubishi Corporation
Japan
Motorola Solutions, Inc.
United States
NCEPOWER 
China
NEC Corporation
United States
NXP Semiconductors
United States
onsemi
United States
Panasonic
Newark, NJ
Powerex, Inc.
United States
ROHM Co., Ltd.
Japan
Semikron, Inc.
Hudson, NH
Siemens AG
Germany
STMicroelectronics, Inc.
United States
Taiwan Semiconductor Manufacturing Company, Ltd.
United States
Texas Instruments High-Performance Analog
United States
Toshiba Corporation
Japan
Toshiba Semiconductor & Storage Products
United States
TRINAMIC Motion Control GmbH & Co. KG.
Germany
TT Electronics
United States
Vishay Intertechnology, Inc.
United States
Vishay Precision Group
United States
Wolfspeed
United States