Bipolar RF Transistors Datasheets

Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Bipolar RF Transistors Datasheets From:
Headquarters
New Yorker Electronics Co., Inc.
Northvale, NJ
Richardson RFPD
United States
RS Components, Ltd.
United Kingdom
Win Source Electronics
United States
Allegro MicroSystems Inc.
United States
TE Connectivity
United States
Texas Instruments
United States
Acme Chip Technology Co., Limited
China
Karl Kruse GmbH & Co. KG
Germany
LCSC Electronics Technology (HK) Limited
China
Northrop Grumman Corporation
Falls Church, VA
ODG (Origin Data Global)
China
ROHM Semiconductor GmbH
Germany
Semicoa
Costa Mesa, CA
Shenzhen Shengyu Electronics Technology Limited
China
Toshiba America, Inc.
New York, NY
TT Semiconductor, Inc.
Anaheim, CA
Utmel Electronic Limited
China
VAST STOCK CO., LIMITED
Hong Kong
ABLIC Inc.
United States
Advanced Semiconductor, Inc.
United States
Allied Electronics, Inc.
Fort Worth, TX
Amphenol Corporation
United States
Anhui Anmei Semiconductor Co., Ltd.
China
Assmann WSW Components, Inc.
United States
Belden Inc.
United States
Born Semiconductor (Shenzhen) Co., Ltd.
China
Calogic, LLC
United States
DOWOSEMI Technology Co., Ltd.
China
EDAC, Inc.
Canada
Foshan Blue Rocket Electronics Co.,Ltd.
China
Fuji Electric Global
Japan
FuxinSemi Semiconductor (Shenzhen) Co., Ltd.
China
Goodwork Semiconductor Co., Ltd.
Taiwan
Guangdong Fenghua Advanced Technology Group Co., Ltd.
China
Guangdong Juxing Electronic Technology Co., Ltd.
China
Guangdong Shikues Micro Industrial Co., Ltd
China
Guangdong YFW Electronics Co, Ltd.
China
HARTING Inc. of North America
Elgin, IL
Hitachi, Ltd.
Japan
Hitachi America, Ltd., Industrial Components and Equipment Division
United States
Hunan Jinxin Technology Co., Ltd.
Changsha City, Hunan
Inventus Power
United States
ITT Inc.
United States
IXYS Corporation
United States
JCET Group
Milpitas, CA
Jiangsu Changjing Electronics Technology Co., Ltd
China
Jiangsu High Diode Semiconductor Co., Ltd.
China
JSMicro Semiconductor Co., Ltd.
China
KEC Corporation
Korea, South
Kexin Co., Ltd.
China
Kycon, Inc.
United States
LAPIS Semiconductor
Japan
Leshan Radio Company, Ltd.
China
Leshan Radio Co., Ltd.
China
LIXINC Electronics Co., Limited
China
Luguang Electronic Technology CO.,LTD.
China
Messenko Semiconductor
Taiwan
Microsemi Corp.
United States
Mitsubishi Corporation
Japan
Mitsubishi Electric & Electronics USA, Inc.
United States
Motorola Solutions, Inc.
United States
NEC Corporation
United States
NorComp
United States
NTE Electronics, Inc.
United States
NXP USA, Inc.
Austin, TX
OmniVision Technologies, Inc.
United States
Parallax, Inc.
United States
Plessey Semiconductors, Ltd.
United Kingdom
pSemi
United States
ROHM Co., Ltd.
Japan
Royal Philips Electronics
United States
Sanyo Machine America
United States
Semikron, Inc.
Hudson, NH
Semtech Corp.
Camarillo, CA
Shandong Jingdao Microelectronics Co., Ltd.
China
Shenzhen Hottech Electronics Co., Ltd.
China
Shenzhen Huaxuanyang Electronic Co., Ltd.
China
Shenzhen Luguang Electronic Technology Co., Ltd.
China
Shenzhen SPTECH Micro-electronics Co., Ltd.
China
Shindengen
Germany
Siemens AG
Germany
Solid State, Inc.
United States
Taiwan Semiconductor Manufacturing Company, Ltd.
United States
Taizhou Electronics Co., Ltd.
China
THAT Corporation
United States
Toshiba Corporation
Japan
Toshiba Imaging Systems Division
Irvine, CA
Toshiba Semiconductor & Storage Products
United States
TRINAMIC Motion Control GmbH & Co. KG.
Germany
Vishay Precision Group
United States
Welwyn Components, Ltd.
United Kingdom
Yangzhou Yangjie Electronic Technology Co., Ltd.
China