The PH3134-11S is a NPN silicon microwave power transistor designed for radar pulsed applications at 3.1-3.4 GHz, delivering 11 W output power with a 1 µs pulse width and 10% duty cycle. It is housed in a hermetic metal/ceramic package and operates in common base configuration with internal impedance matching. The device supports a peak collector current of 1.3 A, a collector-emitter voltage of 60 V, and a junction temperature up to 200 °C. Thermal resistance is 1.4 °C/W under pulsed operation, with a power gain of 8.0 dB and collector efficiency of 35% at 36 V supply. The transistor is RoHS compliant and rated for storage temperatures from -65 °C to +200 °C.
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | PH3134-11S |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN; NPN |
| IC(max) | 1300 milliamps |
| VCEO | 60 volts |
