PH3134-75S is a NPN silicon microwave power transistor designed for radar pulsed applications at 3.1-3.4 GHz with 75W output power, 1µs pulse width, and 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device operates with a collector-emitter voltage rating of 65 V, peak collector current of 8.9 A, and junction temperature up to 200°C. Thermal resistance from junction to case is 0.25 °C/W at 75W output. The transistor meets RoHS compliance and operates in Class C with 7.5 dB power gain and 35% collector efficiency under specified test conditions.
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | PH3134-75S |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN; NPN |
| IC(max) | 8900 milliamps |
| VCEO | 65 volts |
