MACOM Bipolar RF Transistors PH3134-9L

PH3134-9L is a NPN silicon microwave power transistor for radar pulsed applications at 3.1-3.4 GHz, delivering 9 W output power with 300 µs pulse width and 10% duty cycle. It features a hermetic metal/ceramic package, common base configuration, and internal impedance matching. The device operates with a collector-emitter voltage of up to 60 V and peak collector current of 1.1 A, with a junction temperature rating of 200°C. Thermal resistance is 2.7 °C/W between junction and case. Power gain is 8.0 dB, collector efficiency is 35%, and input return loss is at least -6 dB under test conditions. It meets RoHS compliance.