Advantech Datasheets for DRAM Modules

DRAM memory modules are collections of DRAM cells assembled on a circuit board.
DRAM Modules: Learn more

Product Name	Notes
96D2-1G667NN-TRL 96D3-1G1333NN-TR1 96D3-2G1333ER-AP1 96D3-2G1600NN-TRL 96D3-4G1333NN-AP 96D3-4G1600NN-APL 96SD1-512M400NN-AD 96SD2-2G667NN-TR1 96SD3-2G1333E-AP 96SD3-2G1333NN-AP2 96SD3-4G1066NN-AP 96SD3L-8G1333NN-AP AQD-D316RV16-SM AQD-D31GN13-SX AQD-D3L16RV16-SM AQD-D3L2GN16-SQ AQD-D3L2GNV16-SQ AQD-D3L4GN16-SG AQD-D3L4GNV16-SG AQD-D3L8GN16-SG AQD-D3L8GNV16-SG AQD-D3L8GR13-SG AQD-D3L8GRV16-SG AQD-D4U16R21-SE AQD-D4U4GN21-SG AQD-SD3L2GN16-SQ AQD-SD3L4GN16-SG AQD-SD3L8GN16-SG AQD-SD3L8GN16-SGW SQR-HS4N32G3K2SEAB SQR-RD4N16G2K6SZCB SQR-RD4N32G2K6SRCB SQR-RD4N8G2K4SZBBB SQR-RD4N8G2K6SZBCB SQR-SD2I-2G667SN SQR-SD2I2G667MNFMB SQR-SD3I-16G1K6MLB SQR-SD3I-2G1K6SNLB SQR-SD3I-4G1333SN SQR-SD3I-4G1600SEL SQR-SD3I-4G1600SNL SQR-SD3I-4G1K6SNLB SQR-SD3I-4G1K8SNLB SQR-SD3I-8G1600SEL SQR-SD3I-8G1600SN SQR-SD3I-8G1600SNL SQR-SD3I-8G1K6SNLB SQR-SD3I-8G1K8SNLB SQR-SD3I8G1K6SEEEB SQR-SD3M-16G1K6MLB SQR-SD3M-2G1K6SNLB SQR-SD3M-4G1K6SNLB SQR-SD3M-4G1K8SNLB SQR-SD3M-8G1K6SNLB SQR-SD3N-4G1K6HNCC SQR-SD3N2G1K6MNFKB SQR-SD3N2G1K6SEFFB SQR-SD3N2G1K6SNCEB SQR-SD3N4G1K6SEEEB SQR-SD3N8G1K6SEEEB SQR-SD3T-8G1600SE SQR-SD4I-16G2K1SEB SQR-SD4I-16G2K1SNB SQR-SD4I-4G2K1SEB SQR-SD4I-4G2K1SNB SQR-SD4I-8G2K1SEB SQR-SD4I-8G2K1SNB SQR-SD4I32G2K6SEME SQR-SD4I32G2K6SNME SQR-SD4I8G2K4SEBBB SQR-SD4I8G3K2SNBCB SQR-SD4M-16G2K1SEB SQR-SD4M-16G2K1SNB SQR-SD4M-4G2K1SNB SQR-SD4M-8G2K1SNB SQR-SD4N16G2K4SEBB SQR-SD4N16G2K6HNCE SQR-SD4N16G2K6SECB SQR-SD4N32G2K6SEME SQR-SD4N32G2K6SNME SQR-SD4N4G2K6SNEFB SQR-SD4N8G2K6SNBCB SQR-UD3N4G1K6SEEEB SQR-UD4N16G2K6SNCB SQR-UD4N16G3K2SNCB SQR-UD4N32G2K6SNME SQR-UD4N4G2K4SNEEB SQR-UD4N4G2K6SNEFB SQR-UD4N4G2K6SNPCB SQR-UD4N4G3K2SNPCB SQR-UD4N8G2K6SNBCB SQR-UD4N8G2K6SNEFB SQR-UD4N8G3K2SEBCB SQR-UD4N8G3K2SNBCB SQR-YD4I32G2K6SEME SQR-YD4I32G3K2SEAB SQR-YD4N16G2K6HNCE SQR-YD4N32G2K6SEME
16G DDR4 2400 288Pin 2GX4 Registered VLP 1.2V -40~85℃ Samsung Chip -- 96D4I-16G2400R-ATL	16G DDR4 2400 288Pin 2GX4 Registered VLP 1.2V -40~85℃ Samsung Chip DDR4-2400 Registered DIMM Very Low Profile Wide temperature 30μ" gold plating thickness 1.2V Power Consumption Provides better reliability, availability...
4G DDR4 2400 288Pin 512MBX8 Registered VLP 1.2V -40~85℃ Samsung Chip -- 96D4I-4G2400R-ATL	4G DDR4 2400 288Pin 512MBX8 Registered VLP 1.2V -40~85℃ Samsung Chip DDR4-2400 Registered DIMM Very Low Profile Wide temperature 30μ" gold plating thickness 1.2V Power Consumption Provides better reliability, availability...
8G DDR3-1600 240Pin 512MX8 1.5V VLP ECC Micron Chip -- 96D3-8G1600E-APL	8G DDR3-1600 240Pin 512MX8 1.5V VLP ECC Micron Chip DDR3-1600 ECC VLP DIMM 240-Pin 512MX8 Micron Chip
8G DDR3-1600 240Pin 512MX8 1.5V VLP Unbuffered Micron Chip -- 96D3-8G1600NN-APL	8G DDR3-1600 240Pin 512MX8 1.5V VLP Unbuffered Micron Chip DDR3-1600 Unbuffered VLP DIMM 240-Pin 512MX8 Micron Chip
8G DDR4 2400 288Pin 1GX8 Registered VLP 1.2V -40~85℃ Samsung Chip -- 96D4I-8G2400R-ATL	8G DDR4 2400 288Pin 1GX8 Registered VLP 1.2V -40~85℃ Samsung Chip DDR4-2400 Registered DIMM Very Low Profile Wide temperature 30μ" gold plating thickness 1.2V Power Consumption Provides better reliability, availability...
8G SO-DDR3-1600 204Pin 512MX8 1.5V Unbuffered Micron Chip -- 96SD3-8G1600NN-AP	8G SO-DDR3-1600 204Pin 512MX8 1.5V Unbuffered Micron Chip DDR3-1600 Unbuffered SO-DIMM 204-Pin 512MX8 Micron Chip
Advantech 16G DDR4-2400 260Pin 1GX8 1.2V ECC Hynix Chip -- AQD-SD4U16E24-HE	Advantech 16G DDR4-2400 260Pin 1GX8 1.2V ECC Hynix Chip DDR4 2400 ECC SO DIMM 30μ" gold plating thickness (IPC-2221 Standard) 1.2V Power Consumption Serial presence detect with EEPROM Support ECC...
Advantech 16G DDR4-2400 288Pin 1GX8 1.2V ECC Hynix Chip -- AQD-D4U16E24-HE	Advantech 16G DDR4-2400 288Pin 1GX8 1.2V ECC Hynix Chip DDR4-2400 ECC DIMM 30μ" gold plating thickness (IPC-2221 standard) 1.2V power consumption Serial presence detect with EEPROM Support ECC error detection...
Advantech 16G DDR4-2400 288Pin 1GX8 1.2V Registered Hynix Chip -- AQD-D4U16R24-HE	Advantech 16G DDR4-2400 288Pin 1GX8 1.2V Registered Hynix Chip DDR4-2400 Registered DIMM 30μ" gold plating thickness (IPC-2221 standard) 1.2V power consumption Serial presence detect with EEPROM Support ECC error detection...
Advantech 1G SO-DDR2-800 200Pin 128MX8 1.8V Unbuffered Samsung Chip -- AQD-SD21GN80-SX	Advantech 1G SO-DDR2-800 200Pin 128MX8 1.8V Unbuffered Samsung Chip DDR2-800 SO-DIMM 200-Pin 128MX8 Samsung Chip
Advantech 4G DDR4-2400 288Pin 512MX8 1.2V ECC Hynix Chip -- AQD-D4U4GE24-HG	Advantech 4G DDR4-2400 288Pin 512MX8 1.2V ECC Hynix Chip DDR4-2400 ECC DIMM 30μ" gold plating thickness (IPC-2221 standard) 1.2V power consumption Serial presence detect with EEPROM Support ECC error detection...
Advantech 4G DDR4-2400 288Pin 512X8 1.2V Registered Hynix Chip -- AQD-D4U4GR24-HG	Advantech 4G DDR4-2400 288Pin 512X8 1.2V Registered Hynix Chip DDR4-2400 Registered DIMM 30μ" gold plating thickness (IPC-2221 standard) 1.2V power consumption Serial presence detect with EEPROM Support ECC error detection...
Advantech 4G SO-DDR4-2400 260Pin 512MX8 1.2V ECC Hynix Chip -- AQD-SD4U4GE24-HG	Advantech 4G SO-DDR4-2400 260Pin 512MX8 1.2V ECC Hynix Chip DDR4 2400 ECC SO DIMM 30μ" gold plating thickness (IPC-2221 Standard) 1.2V Power Consumption Serial presence detect with EEPROM Support ECC...
Advantech 8G DDR4-2400 288Pin 1GX8 1.2V ECC Hynix Chip -- AQD-D4U8GE24-HE	Advantech 8G DDR4-2400 288Pin 1GX8 1.2V ECC Hynix Chip DDR4-2400 ECC DIMM 30μ" gold plating thickness (IPC-2221 standard) 1.2V power consumption Serial presence detect with EEPROM Support ECC error detection...
Advantech 8G DDR4-2400 288Pin 1GX8 1.2V Registered Hynix Chip -- AQD-D4U8GR24-HE	Advantech 8G DDR4-2400 288Pin 1GX8 1.2V Registered Hynix Chip DDR4-2400 Registered DIMM 30μ" gold plating thickness (IPC-2221 standard) 1.2V power consumption Serial presence detect with EEPROM Support ECC error detection...
Advantech 8G SO-DDR4-2400 260Pin 1GX8 1.2V ECC Hynix Chip -- AQD-SD4U8GE24-HE	Advantech 8G SO-DDR4-2400 260Pin 1GX8 1.2V ECC Hynix Chip DDR4 2400 ECC SO DIMM 30μ" gold plating thickness (IPC-2221 Standard) 1.2V Power Consumption Serial presence detect with EEPROM Support ECC...
ECC UDIMM DDR3L 1600 -- SQR-UD3(ECC)	Industrial Grade DRAM memory which is designed with original IC chip and provide ECC(Error-Correcting Code) function for IOT applications Original memory chips (Samsun/Hynix) ECC function support Fixed BOM Wide Temperature...
UDIMM DDR3L 1600 -- SQR-UD3N UDIMM DDR3L 1600 -- SQR-UD3N UDIMM DDR3L 1600 -- SQR-UD3N	SQRAM deliver reliable quality and high compatibility DRAM memory products by strict burn-in test program for industrial market Samsung Original memory IC FIXED BOM 3yrs longevity & lifetime warranty Undergo...
ECC SODIMM DDR4 2133/2400/2666 -- SQR-SD4(ECC) ECC SODIMM DDR4 2133/2400/2666 -- SQR-SD4(ECC) ECC SODIMM DDR4 2133/2400/2666 -- SQR-SD4(ECC) ECC SODIMM DDR4 2133/2400/2666 -- SQR-SD4(ECC) ECC SODIMM DDR4 2133/2400/2666 -- SQR-SD4(ECC) ECC SODIMM DDR4 2133/2400/2666 -- SQR-SD4(ECC) ECC SODIMM DDR4 2133/2400/2666 -- SQR-SD4(ECC)	SQRAM is Industrial Grade DRAM memory which is designed with original IC chip and adopt a rigorous test program to ensure durable and reliable quality. SQRAM are fixed DIE for...
SODIMM DRAM Memory DDR1 series -- SQR-SD1 UDIMM DDR4 2400/2666/3200 -- SQR-UD4N UDIMM DDR4 2400/2666/3200 -- SQR-UD4N UDIMM DDR4 2400/2666/3200 -- SQR-UD4N UDIMM DDR4 2400/2666/3200 -- SQR-UD4N UDIMM DDR4 2400/2666/3200 -- SQR-UD4N UDIMM DDR4 2400/2666/3200 -- SQR-UD4N UDIMM DDR4 2400/2666/3200 -- SQR-UD4N UDIMM DDR4 2400/2666/3200 -- SQR-UD4N	SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and reliable quality. SQRAM are fixed...
Minus Grade SODIMM DDR4 2133/2400 -- SQR-SD4M Minus Grade SODIMM DDR4 2133/2400 -- SQR-SD4M Minus Grade SODIMM DDR4 2133/2400 -- SQR-SD4M Minus Grade SODIMM DDR4 2133/2400 -- SQR-SD4M	SQRAM is Industrial Grade DRAM memory. All SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and reliable quality. Extended temperature -20~85C support.
SODIMM DDR3L 1333/1600 -- SQR-SD3M SODIMM DDR3L 1333/1600 -- SQR-SD3M SODIMM DDR3L 1333/1600 -- SQR-SD3M SODIMM DDR3L 1333/1600 -- SQR-SD3M SODIMM DDR3L 1333/1600 -- SQR-SD3M SODIMM DDR3L 1333/1600 -- SQR-SD3M	SQRAM is Industrial Grade DRAM memory. All SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and reliable quality. SQR Mi-grade is developing...
288pin UDIMM DDR4 -- SQR-UD4M 288pin UDIMM DDR4 -- SQR-UD4M SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SODIMM DDR4 -- SQR-SD4N SQR-HS3I -- SQR-HS3I SQR-HS4N -- SQR-HS4N SQR-SD3N -- SQR-SD3N SQR-SD3N -- SQR-SD3N SQR-SD3N -- SQR-SD3N SQR-SD3N -- SQR-SD3N SQR-SD3N -- SQR-SD3N SQR-SD3N -- SQR-SD3N SQR-SD3N -- SQR-SD3N SQR-SD3N -- SQR-SD3N	SQRAM is Industrial Grade DRAM memory. All SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and reliable quality. SQRAM are fixed IC...
Industrial Grade SODIMM DDR4 2133/2400/2666 -- SQR-SD4I Industrial Grade SODIMM DDR4 2133/2400/2666 -- SQR-SD4I Industrial Grade SODIMM DDR4 2133/2400/2666 -- SQR-SD4I Industrial Grade SODIMM DDR4 2133/2400/2666 -- SQR-SD4I Industrial Grade SODIMM DDR4 2133/2400/2666 -- SQR-SD4I Industrial Grade SODIMM DDR4 2133/2400/2666 -- SQR-SD4I Industrial Grade SODIMM DDR4 2133/2400/2666 -- SQR-SD4I Industrial Grade SODIMM DDR4 2133/2400/2666 -- SQR-SD4I Industrial Grade SODIMM DDR4 2133/2400/2666 -- SQR-SD4I Industrial Grade SODIMM DDR4 2133/2400/2666 -- SQR-SD4I	SQRAM is Industrial Grade DRAM memory. All SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and reliable quality. Wide temperature -40~85C support.
Advantech 16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip -- AQD-D4U16GE32-SE Advantech 16GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip -- AQD-SD4U16GE32-SE	16GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance ECC
Advantech 16GB DDR4-3200 1GbX8 1.2V Registered Samsung Chip -- AQD-D4U16GR32-SE	16GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Rigister
Advantech 16GB DDR4-3200 1GbX8 1.2V Samsung Chip -- AQD-D4U16GN32-SE Advantech 16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip -- AQD-SD4U16GN32-SE	16GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
Advantech 32GB DDR4-3200 2GbX8 1.2V ECC Samsung Chip -- AQD-D4U32GE32-SB Advantech 32GB SO-DDR4-3200 2GbX8 1.2V ECC Samsung Chip -- AQD-SD4U32GE32-SB	32GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance ECC
Advantech 32GB DDR4-3200 2GbX8 1.2V Registered Samsung Chip -- AQD-D4U32GR32-SB	32GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Rigister
Advantech 32GB DDR4-3200 2GbX8 1.2V Samsung Chip -- AQD-D4U32GN32-SB Advantech 32GB SO-DDR4-3200 2GbX8 1.2V Samsung Chip -- AQD-SD4U32GN32-SB	32GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
Advantech 4GB DDR4-3200 512MBx16 1.2V Samsung Chip -- AQD-D4U4GN32-SP	4GB DDR 4 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
Advantech 4GB SO-SO-DDR4-3200 512ＭBx16 1.2V Samsung Chip -- AQD-SD4U4GN32-SP	4GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
Advantech 8GB DDR4-3200 1GbX8 1.2V Samsung Chip -- AQD-D4U8GN32-SE	8GB DDR 4 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
Advantech 8GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip -- AQD-D4U8GE32-SE Advantech 8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip -- AQD-SD4U8GE32-SE	8GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance ECC
Advantech 8GB DDR4-3200 1GbX8 1.2V Registered Samsung Chip -- AQD-D4U8GR32-SE	8GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Rigister
Advantech 8GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip -- AQD-SD4U8GN32-SP	8GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
512MB SO-DDR1-400 200Pin 64MX64 2.5V Unbuffered Micron Chip -- 96SD1I-512M400NN-I	DDR1-400 SO-DIMM 200-Pin 64MX64 Micron Chip
1G SO-DDR1-400 200Pin 64MX8 2.5V Unbuffered Micron Chip -- 96SD1I-1G400NN-IN1	DDR1-400 SO-DIMM 200-Pin 64MX8 Micron Chip
512MB SO-DDR1-400 200Pin 64MX8 2.5V Unbuffered Promos Chip -- 96SD1-512M400NN-AP	DDR1-400 SO-DIMM 200-Pin 64MX8 Promos Chip
1G SO-DDR1-400 200Pin 64MX8 2.5V Unbuffered Promos Chip -- 96SD1-1G400NN-AP	DDR1-400 200-Pin 64MBX8 Promos Chip
512M SO-DDR2-667 200Pin 64MX8 1.8V Unbuffered Samsung Chip -- 96SD2-512M667NN-TR	DDR2-667 SO-DIMM 200-Pin 64MX8 Samsung Chip
2G DDR2-667 240Pin 128MX8 Unbuffered Samsung Chip -- 96D2-2G667-AP	DDR2-667 Unbuffered DIMM 240-Pin 128MX8 Samsung Chip
512M DDR2-667 240Pin 64MX8 1.8V VLP Unbuffered Samsung Chip -- 96D2-512M667NN-TRL	DDR2-667 Unbuffered VLP 240-Pin 64MX8 Samsung Chip
1G SO-DDR2-800 200Pin 128MX8 1.8V Unbuffered Samsung Chip -- 96SD2-1G800NN-TR1 2G SO-DDR2-800 200Pin 128MX8 1.8V Unbuffered Samsung Chip -- 96SD2-2G800NN-TR1	DDR2-800 SO-DIMM 200-Pin 128MX8 Samsung Chip
1G DDR2-800 240Pin 128MX8 Unbuffered Samsung Chip -- 96D2-1G800NN-AP3 2G DDR2-800 240Pin 128MX8 Unbuffered Samsung Chip -- 96D2-2G800NN-AP	DDR2-800 Unbuffered DIMM 240-Pin 128MX8 Samsung Chip
1G SO-DDR2-800 200Pin 128MX8 Samsung Chip -- 96SD2-1G800NN-AP3 2G SO-DDR2-800 200Pin 128MX8 Samsung Chip -- 96SD2-2G800NN-AP2	DDR2-800 Unbuffered SO-DIMM 200-Pin 128MX8 Samsung Chip
1G DDR2-800 240Pin 128MX8 1.8V VLP Unbuffered Samsung Chip -- 96D2-1G800NN-TRL1 2G DDR2-800 240Pin 128MX8 1.8V VLP Unbuffered Samsung Chip -- 96D2-2G800NN-TRL1	DDR2-800 Unbuffered VLP 240-Pin 128MX8 Samsung Chip
Advantech 2G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip -- AQD-D3L2GN16-SQ1 Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip -- AQD-D3L4GN16-SG1 Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip -- AQD-D3L8GN16-SG1	DDR3 1600Mhz Unbuffered DIMM 30μ" gold plating thickness 1.35V power consumption Samsung original chip
Advantech 1GB DDR3 1600 204Pin 128Mb x 16 Unffered SODIMM 1.35V -- AQD-SD3L1GN16-SC Advantech 2G SO-DDR3-1600 204Pin 256MX8 1.35V Unbuffered Samsung Chip -- AQD-SD3L2GN16-SQ1 Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip -- AQD-SD3L4GN16-SG1 Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip -- AQD-SD3L8GN16-SG1	DDR3 1600Mhz Unbuffered SO-DIMM 30μ" gold plating thickness 1.35V power consumption Samsung original chip
Advantech 1G SO-DDR3-1333 204Pin 128MX8 1.5V Unbuffered Samsung Chip -- AQD-SD31GN13-SX	DDR3-1333 SO-DIMM 204-Pin 128MX8 Samsung Chip
Advantech 8G DDR3-1600 240Pin 512MX8 1.5V VLP Registered Samsung Chip -- AQD-D38GRV16-SG	DDR3-1600 ECC Registered VLP 240-Pin 512MX8 Samsung Chip
Advantech 4G DDR3-1600 240Pin 512MX8 1.35V ECC and Registered Samsung Chip -- AQD-D3L4GR16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Registered Samsung Chip -- AQD-D3L8GR16-SG	DDR3-1600 ECC Registered 240-Pin 512MX8 Samsung Chip
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip -- AQD-SD3L4GE16-SG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip -- AQD-SD3L8GE16-SG	DDR3-1600 ECC SO-DIMM 204-Pin 512MX8 Samsung Chip
Advantech 2G DDR3-1600 240Pin 256MX8 1.35V ECC Samsung Chip -- AQD-D3L2GE16-SQ	DDR3-1600 ECC 240-Pin 256MX8 Samsung Chip
Advantech 4G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip -- AQD-D3L4GE16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip -- AQD-D3L8GE16-SG	DDR3-1600 ECC 240-Pin 512MX8 Samsung Chip
Advantech 4G SO-DDR3-1600 204Pin 256X8 1.35V Unbuffered Samsung Chip -- AQD-SD3L4GN16-SQ	DDR3-1600 SO-DIMM 204-Pin 256MX8 Samsung Chip
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Hynix Chip -- AQD-SD3L4GN16-HG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Hynix Chip -- AQD-SD3L8GN16-HG	DDR3-1600 SO-DIMM 204-Pin 512MX8 Hynix Chip
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Micron Chip -- AQD-SD3L4GN16-MG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Micron Chip -- AQD-SD3L8GN16-MG	DDR3-1600 SO-DIMM 204-Pin 512MX8 Micron Chip
Advantech 4G Anti-sulfur and Wide Temp SO-DDR3-1600 204Pin 512X8 1.35V Micron Chip -- AQD-SD3L4GN16-MGI Advantech 8G Anti-sulfur and Wide Temp SO-DDR3-1600 204Pin 512X8 1.35V Micron Chip -- AQD-SD3L8GN16-MGI	DDR3-1600 Unbuffered SO-DIMM Supports wide temperature -40 ~ 85°C Anti-sulfur resistor 30μ" gold plating thickness 1.35V power consumption 100% tested for stability, compatibility and performance Micron original chip
Advantech 4G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip -- AQD-D3L4GN16-SQ	DDR3-1600 240-Pin 256MX8 Samsung
Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Hynix Chip -- AQD-D3L4GN16-HG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Hynix Chip -- AQD-D3L8GN16-HG	DDR3-1600 240-Pin 512MX8 Hynix Chip
Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Micron Chip -- AQD-D3L4GN16-MG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Micron Chip -- AQD-D3L8GN16-MG	DDR3-1600 240-Pin 512MX8 Micron Chip
Advantech 4G SO-DDR3-1866 204Pin 512X8 1.35V Unbuffered Micron Chip -- AQD-SD3L4GN18-MG Advantech 8G SO-DDR3-1866 204Pin 512X8 1.35V Unbuffered Micron Chip -- AQD-SD3L8GN18-MG	DDR3-1866 Unbuffered DIMM 30μ" gold plating thickness 1.35V power consumption Micron original chip
Advantech 8G DDR4-2400 288Pin 1GX8 1.2V ECC Samsung Chip -- AQD-D4U8GE24-SE	DDR4 2400 ECC DIMM • 30μ" gold plating thickness (IPC-2221 standard) • 1.2V power consumption • Serial presence detect with EEPROM • Support ECC error detection and correction • 100%...
Advantech 16G DDR4-2400 288Pin 1GX8 1.2V ECC Samsung Chip -- AQD-D4U16E24-SE Advantech 4G DDR4-2400 288Pin 512MX8 1.2V ECC Samsung Chip -- AQD-D4U4GE24-SG	DDR4 2400 ECC DIMM 30μ" gold plating thickness (IPC-2221 standard) 1.2V power consumption Serial presence detect with EEPROM Support ECC error detection and correction 100% tested for stability, compatibility and...
Advantech 16G SO-DDR4-2400 260Pin 1GX8 1.2V ECC Samsung Chip -- AQD-SD4U16E24-SE Advantech 4G SO-DDR4-2400 260Pin 512MX8 1.2V ECC Samsung Chip -- AQD-SD4U4GE24-SG Advantech 8G SO-DDR4-2400 260Pin 1GX8 1.2V ECC Samsung Chip -- AQD-SD4U8GE24-SE	DDR4 2400 ECC SO-DIMM 30μ" gold plating thickness (IPC-2221 standard) 1.2V power consumption Serial presence detect with EEPROM Support ECC error detection and correction 100% tested for stability, compatibility and...
Advantech 4G Anti-sulfur and Wide Temp SO-DDR4-2400 260Pin 512X8 1.2V Hynix Chip -- AQD-SD4L4GN24-HGI Advantech 8G Anti-sulfur and Wide Temp SO-DDR4-2400 260Pin 1GX8 1.2V Hynix Chip -- AQD-SD4L8GN24-HEI	DDR4 2400Mhz Unbuffered SO-DIMM Supports wide temperature -40 ~ 85°C Anti-sulfur resistor 30μ" gold plating thickness 1.2V power consumption 100% tested for stability, compatibility and performance Hynix original chip
Advantech 4G Anti-sulfur and Wide Temp SO-DDR4-2400 260Pin 512X8 1.2V Samsung Chip -- AQD-SD4U4GN24-SGW Advantech 8G Anti-sulfur and Wide Temp SO-DDR4-2400 260Pin 1GX8 1.2V Samsung Chip -- AQD-SD4U8GN24-SEW	DDR4 2400Mhz Unbuffered SO-DIMM Supports wide temperature -40 ~ 85°C Anti-sulfur resistor 30μ" gold plating thickness 1.2V power consumption 100% tested for stability, compatibility and performance Samsung original chip
16GB DDR4 2666 288Pin 2GX4 Registered ECC 1.2V Samsung Chip -- 96D4-16G2666ER-AT 32GB DDR4 2666 288Pin 2GX4 Registered ECC 1.2V Samsung Chip -- 96D4-32G2666ER-AT 8GB DDR4 2666 288Pin 1GX8 Registered ECC 1.2V Samsung Chip -- 96D4-8G2666ER-AT	DDR4 2666 Registered DIMM. – Standard height 30u Golden Coating Thickness (IPC-2221 Standard) 1.2V Power Consumption Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves...
Advantech 16G RDIMM-DDR4-2666 1GbX8 1.2V Samsung IC -- AQD-D4U16R26-SE Advantech 32G RDIMM-DDR4-2666 2GbX4 1.2V Samsung IC -- AQD-D4U32R26-SM Advantech 8G RDIMM-DDR4-2666 1GbX8 1.2V Samsung IC -- AQD-D4U8GR26-SE	DDR4 2666Mhz Registered DIMM – Standard height 30μ" gold plating thickness Anti-sulfur resistor 1.2V power consumption 100% tested for stability, compatibility and performance Samsung original chip
Micron 16G DDR4 2666 288Pin 1GX8 Registered 1.2V -- 96D4-16G2666ER-MI Micron 32G DDR4 2666 288Pin 2GX4 Registered 1.2V -- 96D4-32G2666ER-MI Micron 8G DDR4 2666 288Pin 1GX8 Registered 1.2V -- 96D4-8G2666ER-MI	DDR4 2666Mhz Registered DIMM. – Standard height Supports ECC error detection and correction 1.2V Power Consumption Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves...
Advantech 16G DDR4-2666 288Pin 1Gx8 1.2V ECC Samsung Chip -- AQD-D4U16E26-SE Advantech 16G SO-DDR4-2666 260Pin 1Gx8 1.2V ECC Samsung Chip -- AQD-SD4U16E26-SE Advantech 4G DDR4-2666 288Pin 512Mx8 1.2V ECC Samsung Chip -- AQD-D4U4GE26-SG Advantech 4G SO-DDR4-2666 260Pin 512Mx8 1.2V ECC Samsung Chip -- AQD-SD4U4GE26-SG Advantech 8G DDR4-2666 288Pin 1Gx8 1.2V ECC Samsung Chip -- AQD-D4U8GE26-SE Advantech 8G SO-DDR4-2666 260Pin 1Gx8 1.2V ECC Samsung Chip -- AQD-SD4U8GE26-SE	DDR4 2666Mhz SO-DIMM / UDIMM with ECC 30μ" gold plating thickness Anti-sulfuration resistor Serial presence detect with EEPROM Support ECC error detection and correction 100% tested for stability, compatibility and...
Advantech 16G SO-DDR4-2666 1GX8 1.2V Samsung IC -- AQD-SD4U16N26-SE Advantech 4G SO-DDR4-2666 512X8 1.2V Samsung IC -- AQD-SD4U4GN26-SG Advantech 8G SO-DDR4-2666 1GX8 1.2V Samsung IC -- AQD-SD4U8GN26-SE	DDR4 2666Mhz Unbuffered SO-DIMM 30μ" gold plating thickness 1.2V power consumption 100% tested for stability, compatibility and performance Samsung original chip
Advantech 16G DDR4-2666 1GX8 1.2V Samsung IC -- AQD-D4U16N26-SE Advantech 4G DDR4-2666 512X8 1.2V Samsung IC -- AQD-D4U4GN26-SG Advantech 8G DDR4-2666 1GX8 1.2V Samsung IC -- AQD-D4U8GN26-SE	DDR4 2666Mhz Unbuffered UDIMM 30μ" gold plating thickness 1.2V power consumption 100% tested for stability, compatibility and performance Samsung original chip
Micron 16G DDR4-2933 288Pin 2Gx4 1.2V Registered -- 96D4-16G2933ER-MI Micron 32G DDR4-2933 288Pin 2Gx4 1.2V Registered -- 96D4-32G2933ER-MI Micron 8G DDR4-2933 288Pin 1GX8 1.2V Registered -- 96D4-8G2933ER-MI	DDR4 2933Mhz Registered DIMM Supports ECC error detection and correction 1.2V Power Consumption Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data integrity
Micron 16B DDR4-3200 288Pin 1Gx8 1.2V Unbuffered -- 96D4-16G3200NN-MI Micron 4GB DDR4-3200 288Pin 512Mx16 1.2V Unbuffered -- 96D4-4G3200NN-MI Micron 8GB DDR4-3200 288Pin 1Gx8 1.2V Unbuffered -- 96D4-8G3200NN-MI	DDR4 3200Mhz Unbuffered DIMM 1.2V Power Consumption Low-power auto self- refresh (LPASR) Data bus inversion (DBI) for data bus Nominal and dynamic on-die termination (ODT) for data, strobe, and mask...
Micron 16B SO-DDR4-3200 260Pin 1Gx8 1.2V Unbuffered -- 96SD4-16G3200NN-MI Micron 4GB SO-DDR4-3200 260Pin 512Mx16 1.2V Unbuffered -- 96SD4-4G3200NN-MI Micron 8GB SO-DDR4-3200 260Pin 1Gx8 1.2V Unbuffered -- 96SD4-8G3200NN-MI	DDR4 3200Mhz Unbuffered DIMM SODIMM 260pin / UDIMM 288pin 1.2V Power Consumption Low-power auto self- refresh (LPASR) Data bus inversion (DBI) for data bus Nominal and dynamic on-die termination (ODT)...
Advantech 8G DDR4-2400 288Pin 1GX8 1.2V Registered Samsung Chip -- AQD-D4U8GR24-SE	DDR4-2400 Registered DIMM – standard height 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data...
16G DDR4 2400 288Pin 2GX4 Registered VLP 1.2V Samsung Chip -- 96D4-16G2400ER-ATL 8G DDR4 2400 288Pin 1GX8 Registered VLP 1.2V Samsung Chip -- 96D4-8G2400ER-ATL	DDR4-2400 Registered DIMM. – Standard height & Very Low Profile 30μ" gold plating thickness (IPC-2221 Standard) 1.2V Power Consumption Provides better reliability, availability and serviceability (RAS) and improves data integrity...
Advantech 16G DDR4 2400 288Pin 1GX8 1.2V Registered Samsung Chip -- AQD-D4U16R24-SE Advantech 4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip -- AQD-D4U4GR24-SG	DDR4-2400 Registered DIMM. – standard height 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption Low-power auto self- refresh (LPASR) Provides better reliability, availability and serviceability (RAS) and improves data...
Advantech 16G DDR4-2400 288Pin 1GX8 1.2V Unbuffered Hynix Chip -- AQD-D4U16N24-HE Advantech 4G DDR4-2400 288Pin 512X16 1.2V Unbuffered Hynix Chip -- AQD-D4U4GN24-HP Advantech 8G DDR4-2400 288Pin 1GX8 1.2V Unbuffered Hynix Chip -- AQD-D4U8GN24-HE	DDR4-2400 Unbuffered DIMM 30μ" gold plating thickness (IPC-2221 Standard) 1.2V Power Consumption RoHS compliant Hynix Original Chip
Advantech 16G DDR4-2400 288Pin 1GX8 1.2V Unbuffered Samsung Chip -- AQD-D4U16N24-SE Advantech 4G DDR4-2400 288Pin 512X8 1.2V Unbuffered Samsung Chip -- AQD-D4U4GN24-SG Advantech 8G DDR4-2400 288Pin 1GX8 1.2V Unbuffered Samsung Chip -- AQD-D4U8GN24-SE	DDR4-2400 Unbuffered DIMM 30μ" gold plating thickness 1.2V power consumption Samsung original chip
Advantech 16G SO-DDR4-2400 260Pin 1GX8 1.2V Unbuffered Hynix Chip -- AQD-SD4U16N24-HE Advantech 4G SO-DDR4-2400 260Pin 512X16 1.2V Unbuffered Hynix Chip -- AQD-SD4U4GN24-HP Advantech 8G SO-DDR4-2400 260Pin 1GX8 1.2V Unbuffered Hynix Chip -- AQD-SD4U8GN24-HE	DDR4-2400 Unbuffered SO-DIMM 30μ" gold plating thickness (IPC-2221 Standard) 1.2V Power Consumption RoHS compliant Hynix Original Chip
Advantech 16G SO-DDR4-2400 260Pin 1GX8 1.2V Unbuffered Samsung Chip -- AQD-SD4U16N24-SE Advantech 4G SO-DDR4-2400 260Pin 512X8 1.2V Unbuffered Samsung Chip -- AQD-SD4U4GN24-SG Advantech 8G SO-DDR4-2400 260Pin 1GX8 1.2V Unbuffered Samsung Chip -- AQD-SD4U8GN24-SE	DDR4-2400 Unbuffered SO-DIMM 30μ" gold plating thickness 1.2V power consumption Samsung original chip
32G DDR4-2666 2GbX8 1.2V HYX -- AQD-D4U32GN26-HB 32G DDR4-2666 2GbX8 1.2V SAM -- AQD-D4U32GN26-SB 32G SO-DDR4-2666 2GbX8 1.2V HYX -- AQD-SD4U32GN26-HB 32G SO-DDR4-2666 2GbX8 1.2V SAM -- AQD-SD4U32GN26-SB	Increased Bandwidth, up to 2600 Mbps Industrial Stand 30u Gold Plating Enhanced Power Efficiency RoHS compliant & Complies with JEDEC standards Up to 32GB
Micron 64G DDR4 3200 288PIN 4Gbx4 REG -- 96D4-64G3200ER-MI	Micron DRAM Chip DDR4 Spec Registered DIMM Gold edge contacts 64GB
DDR2 800 DIMM 1GB 128x8 Nanya -- 96D2-1G800NN-AP4	Nanya DRAM Chip DDR2 Long DIMM Unbuffered 1GB
Advantech 2GB DDR2 800 DIMM 128x8 Nanya -- 96D2-2G800NN-AP3	Nanya DRAM Chip DDR2 Long DIMM Unbuffered 2GB
Advantech 1GB DDR2 800 SODIMM 128x8 Nanya -- 96SD2-1G800NN-AP4	Nanya DRAM Chip DDR3 So-DIMM Unbuffered 1GB
Advantech 2GB DDR2 800 SODIMM 128x8 Nanya -- 96SD2-2G800NN-AP3	Nanya DRAM Chip DDR4 So-DIMM Unbuffered 2GB
Advantech 2G SO-DDR3-1600 256X16 1.35V&1.5V SAM -- AQD-SD3L2GN16-SR	Samsung DRAM Chip DDR3 Spec Unbuffered DIMM 30μ" gold plating thickness 2GB
Advantech 4G DDR4-2400 512X16 1.2V SAM -- AQD-D4U4GN24-SP Advantech 4G SO-DDR4-2400 512X16 1.2V SAM -- AQD-SD4U4GN24-SP	Samsung DRAM Chip DDR4 Spec Unbuffered DIMM 30μ" gold plating thickness 4GB

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