Advantech Datasheets for DRAM Modules

DRAM memory modules are collections of DRAM cells assembled on a circuit board.
DRAM Modules: Learn more

Product Name Notes
96D2-1G667NN-TRL
96D2-1G800NN-AP3
96D2-2G667-AP
96D2-2G800NN-AP
96D3-1G1333NN-TR1
96D3-2G1333ER-AP1
96D3-2G1600NN-TRL
96D3-4G1333NN-AP
96D3-4G1600NN-APL
96D4-16G2933ER-MI
96D4-32G2666ER-AT
96D4-32G2933ER-MI
96D4-8G2933ER-MI
96D4I-16G2400R-ATL
96D4I-4G2400R-ATL
96SD1-512M400NN-AD
96SD1-512M400NN-AP
96SD1I-1G400NN-IN1
96SD1I-512M400NN-I
96SD2-1G800NN-AP3
96SD2-2G667NN-TR1
96SD2-2G800NN-AP2
96SD2-512M667NN-TR
96SD3-2G1333E-AP
96SD3-2G1333NN-AP2
96SD3-4G1066NN-AP
96SD3L-8G1333NN-AP
AQD-D316RV16-SM
AQD-D31GN13-SX
AQD-D3L16RV16-SM
AQD-D3L2GN16-SQ
AQD-D3L2GN16-SQ1
AQD-D3L2GNV16-SQ
AQD-D3L4GN16-SG
AQD-D3L4GN16-SQ
AQD-D3L4GNV16-SG
AQD-D3L8GN16-SG
AQD-D3L8GNV16-SG
AQD-D3L8GR13-SG
AQD-D3L8GRV16-SG
AQD-D4U16E24-HE
AQD-D4U16R21-SE
AQD-D4U16R24-HE
AQD-D4U16R24-SE
AQD-D4U32R26-SM
AQD-D4U4GN21-SG
AQD-D4U4GN24-HP
AQD-D4U4GN32-SP
AQD-D4U8GE24-HE
AQD-D4U8GE24-SE
AQD-D4U8GN24-HE
AQD-D4U8GR24-HE
AQD-SD21GN80-SX
AQD-SD31GN13-SX
AQD-SD3L2GN16-SQ
AQD-SD3L2GN16-SQ1
AQD-SD3L4GN16-SG
AQD-SD3L8GN16-MG
AQD-SD3L8GN16-SG
AQD-SD4L8GN24-HEI
AQD-SD4U16E24-HE
AQD-SD4U4GE24-SG
AQD-SD4U4GN32-SP
AQD-SD4U8GE24-HE
AQD-SD4U8GE24-SE
AQD-SD4U8GN24-SEW
SQR-HS4N32G3K2SEAB
SQR-RD4N16G2K6SZCB
SQR-RD4N32G2K6SRCB
SQR-RD4N8G2K4SZBBB
SQR-RD4N8G2K6SZBCB
SQR-SD2I-2G667SN
SQR-SD2I2G667MNFMB
SQR-SD3I-16G1K6MLB
SQR-SD3I-2G1K6SNLB
SQR-SD3I-4G1333SN
SQR-SD3I-4G1600SEL
SQR-SD3I-4G1600SNL
SQR-SD3I-4G1K6SNLB
SQR-SD3I-4G1K8SNLB
SQR-SD3I-8G1600SEL
SQR-SD3I-8G1600SN
SQR-SD3I-8G1600SNL
SQR-SD3I-8G1K6SNLB
SQR-SD3I-8G1K8SNLB
SQR-SD3I8G1K6SEEEB
SQR-SD3M-16G1K6MLB
SQR-SD3M-2G1K6SNLB
SQR-SD3M-4G1K6SNFB
SQR-SD3M-4G1K6SNLB
SQR-SD3M-4G1K8SNLB
SQR-SD3M-8G1K6SNLB
SQR-SD3N-4G1K6HNCC
SQR-SD3N2G1K6SEFFB
SQR-SD3N2G1K6SNCEB
SQR-SD3N4G1K6SEEEB
SQR-SD3N8G1K6SEEEB
SQR-SD3T-8G1600SE
SQR-SD4I-16G2K1SEB
SQR-SD4I-16G2K1SNB
SQR-SD4I-4G2K1SEB
SQR-SD4I-4G2K1SNB
SQR-SD4I-8G2K1SEB
SQR-SD4I-8G2K1SNB
SQR-SD4I32G2K6SNME
SQR-SD4I32G3K2SNAB
SQR-SD4I8G2K4SEBBB
SQR-SD4I8G2K6SNBCB
SQR-SD4I8G3K2SEBCB
SQR-SD4I8G3K2SNBCB
SQR-SD4M-16G2K1SEB
SQR-SD4M-16G2K1SNB
SQR-SD4M-4G2K1SNB
SQR-SD4M-8G2K1SNB
SQR-SD4N16G2K4SEBB
SQR-SD4N16G2K6HNCE
SQR-SD4N16G2K6SECB
SQR-SD4N4G2K6SNEFB
SQR-SD4N8G2K6SNBCB
SQR-UD3N4G1K6SEEEB
SQR-UD4N16G2K6SNCB
SQR-UD4N16G3K2SNCB
SQR-UD4N32G2K6SNME
SQR-UD4N4G2K4SNEEB
SQR-UD4N4G2K6SNEFB
SQR-UD4N4G2K6SNPCB
SQR-UD4N4G3K2SNPCB
SQR-UD4N8G2K6SNBCB
SQR-UD4N8G2K6SNEFB
SQR-UD4N8G3K2SEBCB
SQR-UD4N8G3K2SNBCB
SQR-YD4I32G3K2SEAB
SQR-YD4N16G2K6HNCE
SQR-YD4N32G2K6SEME
16G DDR4-3200 1GX8 1.2V SAM -20~85℃ -- AQD-D4U16GN32-SE1
16G DDR4-3200 1GX8 1.2V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration SEMI Wide-temp Support -20~85℃
16G DDR5-5600 2GX8 1.1V SAM -20~85℃ -- AQD-D5V16GN56-SBH
16G DDR5-5600 2GX8 1.1V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
16G SO-DDR4-3200 1GX8 1.2V SAM -20~85℃ -- AQD-SD4U16GN32-SE1
16G SO-DDR4-3200 1GX8 1.2V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
16G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃ -- AQD-SD5V16GN56-SBH
16G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
16GB DDR5-5600 2GX8 1.1V SAM -- AQD-D5V16GN56-SB
16GB DDR5-5600 2GX8 1.1V SAM SAM Original Chip PCB: 30μ gold finger Anti-sulfuration On-die ECC for Enhanced RAS Operating Temperature: 0°C ~ 85°C
16GB ECC DDR5-5600 2GX8 1.1V SAM -- AQD-D5V16GE56-SB
16GB ECC DDR5-5600 2GX8 1.1V SAM SAM Original Chip Anti-sulfuration PCB: 30μ gold finger Independent Power Management IC build-in ECC function support
16GB ECC SO-DDR5-5600 2GX8 1.1V SAM -- AQD-SD5V16GE56-SB
16GB ECC SO-DDR5-5600 2GX8 1.1V SAM SAM Original Chip Anti-sulfuration PCB: 30μ gold finger Independent Power Management IC build-in ECC function support
16GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM -- AQD-D5V16GR56-SB
16GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM SAM Original Chip Industrial Design for Improved Reliability Compatible with server platform 30u” golden finger Operating Temperature: 0°C ~ 85°C
16GB SO-DDR5-5600 2GX8 1.1V SAM -- AQD-SD5V16GN56-SB
16GB SO-DDR5-5600 2GX8 1.1V SAM SAM Original Chip PCB: 30μ gold finger Anti-sulfuration On-die ECC for Enhanced RAS Operating Temperature: 0°C ~ 85°C
1G SO-DDR1-400 200Pin 64MX8 2.5V Unbuffered Promos Chip -- 96SD1-1G400NN-AP
1G SO-DDR1-400 200Pin 64MX8 2.5V Unbuffered Promos Chip DDR1-400 200-Pin 64MBX8 Promos Chip
32G DDR4-3200 2GX8 1.2V SAM-20~85℃ -- AQD-D4U32GN32-SB2
32G DDR4-3200 2GX8 1.2V SAM-20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration SEMI Wide-temp Support -20~85℃
32G DDR5-5600 2GX8 1.1V SAM -20~85℃ -- AQD-D5V32GN56-SBH
32G DDR5-5600 2GX8 1.1V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
32G SO-DDR4-3200 2GX8 1.2V SAM -20~85℃ -- AQD-SD4U32GN32-SB2
32G SO-DDR4-3200 2GX8 1.2V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃ -- AQD-SD5V32GN56-SBH
32G SO-DDR5-5600 2GX8 1.1V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
32GB DDR5-5600 2GX8 1.1V SAM -- AQD-D5V32GN56-SB
32GB DDR5-5600 2GX8 1.1V SAM SAM Original Chip PCB: 30μ gold finger Anti-sulfuration On-die ECC for Enhanced RAS Operating Temperature: 0°C ~ 85°C
32GB ECC DDR5-5600 2GX8 1.1V SAM -- AQD-D5V32GE56-SB
32GB ECC DDR5-5600 2GX8 1.1V SAM SAM Original Chip Anti-sulfuration PCB: 30μ gold finger Independent Power Management IC build-in ECC function support
32GB ECC SO-DDR5-5600 2GX8 1.1V SAM -- AQD-SD5V32GE56-SB
32GB ECC SO-DDR5-5600 2GX8 1.1V SAM SAM Original Chip Anti-sulfuration PCB: 30μ gold finger Independent Power Management IC build-in ECC function support
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM -- AQD-D5V32GR56-SB
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM SAM Original Chip Industrial Design for Improved Reliability Compatible with server platform 30u” golden finger Operating Temperature: 0°C ~ 85°C
32GB SO-DDR5-5600 2GX8 1.1V SAM -- AQD-SD5V32GN56-SB
32GB SO-DDR5-5600 2GX8 1.1V SAM SAM Original Chip PCB: 30μ gold finger Anti-sulfuration On-die ECC for Enhanced RAS Operating Temperature: 0°C ~ 85°C
4G DDR3-1600 512X8 1.35V&1.5V SAM -20~85℃ -- AQD-D3L4GN16-SGH
4G DDR3-1600 512X8 1.35V&1.5V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
4G DDR4-3200 512X16 1.2V SAM -20~85℃ -- AQD-SD4U4GN32-SP2
4G DDR4-3200 512X16 1.2V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
4G DDR4-3200 512X16 1.2V SAM -20~85℃ -- AQD-D4U4GN32-SP2
4G DDR4-3200 512X16 1.2V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration SEMI Wide-temp Support -20~85C
4G SO-DDR3-1600 512X8 1.35V SAM -20~85℃ -- AQD-SD3L4GN16-SGH
4G SO-DDR3-1600 512X8 1.35V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
4G SO-DDR3-1600 512X8 1.35V SAM -40~85C -- AQD-SD3L4GN16-SGW
4G SO-DDR3-1600 512X8 1.35V SAM -40~85C 30u" Gold Plating Thickness Anti-sulfurization resistance Samsung original chip Wide Temp. -40C to +85C 100% tested for stability, compatibility and performance
8G DDR3-1600 512X8 1.35V&1.5V SAM -20~85℃ -- AQD-D3L8GN16-SGH
8G DDR3-1600 512X8 1.35V&1.5V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
8G DDR4-3200 1GX8 1.2V SAM -20~85℃ -- AQD-D4U8GN32-SE2
8G DDR4-3200 1GX8 1.2V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration SEMI Wide-temp Support -20~85℃
8G DDR5-5600 1GX16 1.1V SAM -20~85℃ -- AQD-D5V8GN56-SCH
8G DDR5-5600 1GX16 1.1V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
8G SO-DDR3-1600 512X8 1.35V SAM -20~85℃ -- AQD-SD3L8GN16-SGH
8G SO-DDR3-1600 512X8 1.35V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
8G SO-DDR3-1600 512X8 1.35V SAM -40~85C -- AQD-SD3L8GN16-SGW
8G SO-DDR3-1600 512X8 1.35V SAM -40~85C 30u" Gold Plating Thickness Anti-sulfurization resistance Samsung original chip Wide Temp. -40C to +85C 100% tested for stability, compatibility and performance
8G SO-DDR4-3200 1GX8 1.2V SAM -20~85℃ -- AQD-SD4U8GN32-SE2
8G SO-DDR4-3200 1GX8 1.2V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
8G SO-DDR5-5600 1GX16 1.1V SAM -20~85℃ -- AQD-SD5V8GN56-SCH
8G SO-DDR5-5600 1GX16 1.1V SAM -20~85℃ SAM Original Chip Industrial Design for Improved Reliability PCB: 30μ gold finger Anti-sulfuration Semi Wide-temp Support -20~85℃
8GB DDR5-5600 1GX16 1.1V SAM -- AQD-D5V8GN56-SC
8GB DDR5-5600 1GX16 1.1V SAM SAM Original Chip PCB: 30μ gold finger Anti-sulfuration On-die ECC for Enhanced RAS Operating Temperature: 0°C ~ 85°C
8GB SO-DDR5-5600 1GX16 1.1V SAM -- AQD-SD5V8GN56-SC
8GB SO-DDR5-5600 1GX16 1.1V SAM SAM Original Chip PCB: 30μ gold finger Anti-sulfuration On-die ECC for Enhanced RAS Operating Temperature: 0°C ~ 85°C
Advantech 16G DDR4-3200 1GbX8 1.2V SAM -40~85C -- AQD-D4U16N32-SEW
Advantech 16G DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip 100% tested for stability, compatibility and performance...
Advantech 16G DDR4-3200 1GbX8 1.2V SAM -40~85C -- AQD-D4U16N32-SEW1
Advantech 16G DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
Advantech 16G DDR5-4800 288Pin 2GX8 1.1V Registered Samsung Chip -- AQD-D5V16GR48-SB
Advantech 16G DDR5-4800 288Pin 2GX8 1.1V Registered Samsung Chip Samsung Original Chip Dual 32-bit Subchannels Increased Banks and Burst Length DDR5 4.8GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
Advantech 16G DDR5-4800 288Pin 2GX8 1.1V Unbuffered Samsung Chip -- AQD-D5V16GN48-SB
Advantech 16G DDR5-4800 288Pin 2GX8 1.1V Unbuffered Samsung Chip Samsung Original Chip Increased Banks and Burst Length DDR5 4.8GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C -- AQD-D4U16R32-SEW
Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C Registered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
Advantech 16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C -- AQD-SD4U16N32-SEW
Advantech 16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip 100% tested for stability, compatibility and performance...
Advantech 16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C -- AQD-SD4U16N32-SEW1
Advantech 16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
Advantech 16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip -- AQD-D4U16GE32-SE
Advantech 16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip 16GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance ECC
Advantech 16GB DDR4-3200 1GbX8 1.2V Samsung Chip -- AQD-D4U16GN32-SE
Advantech 16GB DDR4-3200 1GbX8 1.2V Samsung Chip 16GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
Advantech 16GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip -- AQD-D5V16GN56-HB
Advantech 16GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip Increased Banks and Burst Length DDR5 5.6GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
Advantech 16GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip -- AQD-SD4U16GE32-SE
Advantech 16GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip 16GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance ECC
Advantech 16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip -- AQD-SD4U16GN32-SE
Advantech 16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip 16GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
Advantech 16GB SO-DIMM DDR5-4800 262Pin 2GX8 1.1V Unbuffered Samsung Chip -- AQD-SD5V16GN48-SB
Advantech 16GB SO-DIMM DDR5-4800 262Pin 2GX8 1.1V Unbuffered Samsung Chip Samsung Original Chip Dual 32-bit Subchannels Increased Banks and Burst Length DDR5 4.8GT/s Same-Bank Refresh On-die ECC for Enhanced RAS...
Advantech 16GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip -- AQD-SD5V16GN56-HB
Advantech 16GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip Increased Banks and Burst Length DDR5 5.6GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
Advantech 32G DDR4-3200 2GbX8 1.2V SAM -40~85C -- AQD-D4U32N32-SBW
Advantech 32G DDR4-3200 2GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip 100% tested for stability, compatibility and performance...
Advantech 32G DDR4-3200 2GbX8 1.2V SAM -40~85C -- AQD-D4U32N32-SBW1
Advantech 32G DDR4-3200 2GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
Advantech 32G DDR5-4800 288Pin 2GX8 1.1V Registered Samsung Chip -- AQD-D5V32GR48-SB
Advantech 32G DDR5-4800 288Pin 2GX8 1.1V Registered Samsung Chip Samsung Original Chip Increased Banks and Burst Length DDR5 4.8GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
Advantech 32G DDR5-4800 288Pin 2GX8 1.1V Unbuffered Samsung Chip -- AQD-D5V32GN48-SB
Advantech 32G DDR5-4800 288Pin 2GX8 1.1V Unbuffered Samsung Chip Samsung Original Chip Increased Banks and Burst Length DDR5 4.8GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
Advantech 32G R-DDR4-3200 2GX8 1.2V Samsung Chip -40~85C -- AQD-D4U32R32-SBW
Advantech 32G R-DDR4-3200 2GX8 1.2V Samsung Chip -40~85C Registered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
Advantech 32G SO-DDR4-3200 2GbX8 1.2V SAM -40~85C -- AQD-SD4U32N32-SBW1
Advantech 32G SO-DDR4-3200 2GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30μ" gold plating thickness Anti-sulfuration resistor 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
Advantech 32G SO-DDR4-3200 2GbX8 1.2V SAM -40~85C -- AQD-SD4U32N32-SBW
Advantech 32G SO-DDR4-3200 2GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip 100% tested for stability, compatibility and performance...
Advantech 32GB DDR4-3200 2GbX8 1.2V ECC Samsung Chip -- AQD-D4U32GE32-SB
Advantech 32GB DDR4-3200 2GbX8 1.2V ECC Samsung Chip 32GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance ECC
Advantech 32GB DDR4-3200 2GbX8 1.2V Samsung Chip -- AQD-D4U32GN32-SB
Advantech 32GB DDR4-3200 2GbX8 1.2V Samsung Chip 32GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
Advantech 32GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip -- AQD-D5V32GN56-HB
Advantech 32GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip Increased Banks and Burst Length DDR5 5.6GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
Advantech 32GB SO-DDR4-3200 2GbX8 1.2V ECC Samsung Chip -- AQD-SD4U32GE32-SB
Advantech 32GB SO-DDR4-3200 2GbX8 1.2V ECC Samsung Chip 32GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance ECC
Advantech 32GB SO-DDR4-3200 2GbX8 1.2V Samsung Chip -- AQD-SD4U32GN32-SB
Advantech 32GB SO-DDR4-3200 2GbX8 1.2V Samsung Chip 32GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
Advantech 32GB SO-DIMM DDR5-4800 262Pin 2GX8 1.1V Unbuffered Samsung Chip -- AQD-SD5V32GN48-SB
Advantech 32GB SO-DIMM DDR5-4800 262Pin 2GX8 1.1V Unbuffered Samsung Chip Samsung Original Chip Dual 32-bit Subchannels Increased Banks and Burst Length DDR5 4.8GT/s Same-Bank Refresh On-die ECC for Enhanced RAS...
Advantech 32GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip -- AQD-SD5V32GN56-HB
Advantech 32GB SO-DIMM DDR5-5600 262Pin 2GX8 1.1V Unbuffered Hynix Chip Hynix Original Chip Increased Banks and Burst Length DDR5 5.6GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
Advantech 4G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip -- AQD-D3L4GE16-SG
Advantech 4G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip DDR3-1600 ECC 240-Pin 512MX8 Samsung Chip
Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip -- AQD-D3L4GN16-SG1
Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip DDR3 1600Mhz Unbuffered DIMM 30μ" gold plating thickness 1.35V power consumption Samsung original chip
Advantech 4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip -- AQD-D4U4GR24-SG
Advantech 4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip DDR4-2400 Registered DIMM. – standard height 30μ" gold plating thickness (IPC-2221 Standard) 1.2V power consumption Low-power auto self- refresh (LPASR)...
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip -- AQD-SD3L4GE16-SG
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip DDR3-1600 ECC SO-DIMM 204-Pin 512MX8 Samsung Chip
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip -- AQD-SD3L4GN16-SG1
Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip DDR3 1600Mhz Unbuffered SO-DIMM 30μ" gold plating thickness 1.35V power consumption Samsung original chip
Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C
Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
Advantech 8G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip -- AQD-D3L8GE16-SG
Advantech 8G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip DDR3-1600 ECC 240-Pin 512MX8 Samsung Chip
Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip -- AQD-D3L8GN16-SG1
Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip DDR3 1600Mhz Unbuffered DIMM 30μ" gold plating thickness 1.35V power consumption Samsung original chip
Advantech 8G DDR4-3200 1GbX8 1.2V SAM -40~85C -- AQD-D4U8GN32-SEW
Advantech 8G DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip 100% tested for stability, compatibility and performance...
Advantech 8G DDR4-3200 1GbX8 1.2V SAM -40~85C -- AQD-D4U8GN32-SEW1
Advantech 8G DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
Advantech 8G DDR5-4800 288Pin 1GX16 1.1V Unbuffered Samsung Chip -- AQD-D5V8GN48-SC
Advantech 8G DDR5-4800 288Pin 1GX16 1.1V Unbuffered Samsung Chip Samsung Original Chip Increased Banks and Burst Length DDR5 4.8GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip -- AQD-SD3L8GE16-SG
Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip DDR3-1600 ECC SO-DIMM 204-Pin 512MX8 Samsung Chip
Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip -- AQD-SD3L8GN16-SG1
Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip DDR3 1600Mhz Unbuffered SO-DIMM 30μ" gold plating thickness 1.35V power consumption Samsung original chip
Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C -- AQD-SD4U8GN32-SEW
Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip 100% tested for stability, compatibility and performance...
Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C -- AQD-SD4U8GN32-SEW1
Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
Advantech 8GB DDR4 SODIMM-3200 1GbX8 SAM -- AQD-SD4U8GN32-SE
Advantech 8GB DDR4 SODIMM-3200 1GbX8 SAM DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip 100% tested for stability, compatibility and performance
Advantech 8GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip -- AQD-D4U8GE32-SE
Advantech 8GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip 8GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance ECC
Advantech 8GB DDR4-3200 1GbX8 1.2V Samsung Chip -- AQD-D4U8GN32-SE
Advantech 8GB DDR4-3200 1GbX8 1.2V Samsung Chip 8GB DDR 4 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance Unbuffered
Advantech 8GB DDR5-5600 288Pin 1GX16 1.1V Unbuffered Hynix Chip -- AQD-D5V8GN56-HC
Advantech 8GB DDR5-5600 288Pin 1GX16 1.1V Unbuffered Hynix Chip Hynix Original Chip Increased Banks and Burst Length DDR5 5.6GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
Advantech 8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip -- AQD-SD4U8GE32-SE
Advantech 8GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip 8GB Speed 3200MHz 30u" Gold Plating Thickness Anti-sulfurization resistance ECC
Advantech 8GB SO-DIMM DDR5-4800 262Pin 1GX16 1.1V Unbuffered Samsung Chip -- AQD-SD5V8GN48-SC
Advantech 8GB SO-DIMM DDR5-4800 262Pin 1GX16 1.1V Unbuffered Samsung Chip Samsung Original Chip Dual 32-bit Subchannels Increased Banks and Burst Length DDR5 4.8GT/s Same-Bank Refresh On-die ECC for Enhanced RAS...
Advantech 8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip -- AQD-SD5V8GN56-HC
Advantech 8GB SO-DIMM DDR5-5600 262Pin 1GX16 1.1V Unbuffered Hynix Chip Hynix Original Chip Increased Banks and Burst Length DDR5 5.6GT/s Same-Bank Refresh On-die ECC for Enhanced RAS
ECC SODIMM DDR4 2133/2400/2666 -- SQR-SD4I32G2K6SEME
ECC SODIMM DDR4 2133/2400/2666 -- SQR-SD4N32G2K6SEME
ECC SODIMM DDR4 2133/2400/2666 260pin SODIMM ECC DIMM Data transfer rate: 2133/2400/2666 MT/sCapacity: 2GB~16GB Original IC chip (Samsung/Hynix) ECC function support Wide temperature range support -40oC~85oC
Micron 8G DDR4 3200 288PIN 1GbX8 REG 1.2V -- 96D4-8G3200ER-MI
Micron 8G DDR4 3200 288PIN 1GbX8 REG 1.2V DDR4-3200 Registered ECC DIMM 1.2V power consumption Supports ECC error detection and correction Data bus inversion (DBI) for data bus Low-power auto...
Rugged SODIMM DDR4 2666/3200 Wide Temperature -- SQR-YD4I32G2K6SEME
Rugged SODIMM DDR4 2666/3200 Wide Temperature Robust PCB designed with Mounting Hole with Military MIL-810G verified Extreme Data Transfer rate up to 3200 MT/s Capacity: up to 32GB Wide Temperature...
SODIMM DDR4 3200MT/s -- SQR-SD4S16G3K2HNBG
SODIMM DDR4 3200MT/s Original Hynix IC chips adopted Data transfer rate: 3200MT/s Capacity: 4/8/16/32GB Operating temperature: 0 °C ~ 85 °C Lifetime warranty
SODIMM DDR4 -- SQR-SD4N32G2K6SNME
SODIMM DDR4 Original IC chips adopted Data transfer rate: 3200MT/s Capacity: 4/8/16/32GB Operating temperature: 0 °C ~ 85 °C 3years longevity, Fixed BOM, Lifetime warranty
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r -- SQR-UD4N16G3K2HEBG
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r -- SQR-UD4N16G3K2MERB
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r -- SQR-UD4N32G3K2HEAG
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r -- SQR-UD4N32G3K2MEFB
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r -- SQR-UD4N8G3K2HEBG
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r -- SQR-UD4N8G3K2MEBRB
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r -- SQR-UD4S16G3K2HNBG
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r -- SQR-UD4S32G3K2HNAG
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r -- SQR-UD4S4G3K2HNPG
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r -- SQR-UD4S8G3K2HNBG
SQRAM is Industrial Grade DRAM memory. all of SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and r 288-pin Dual In-Line Memory...
UDIMM DDR4 2400/2666/3200 -- SQR-UD4N8G3K2MNBRB
UDIMM DDR4 2400/2666/3200 288-pin Dual In-Line Memory Module Data Transfer Rate: 2400/2666/3200 MT/s Capacity: 2GB/4GB/8GB/16GB Operating Temperature: 0°C ~ 85°C Fixed BOM / Lifetime warranty
SODIMM -- SQR-SD3N2G1K6MNFKB
Original Samsung/Micron IC chips adapted Data transfer rate: 1600MHz Operating Temperature: 0 °C ~ 85 °C 30u” golden finger and Fixed BOM Free Intelligent software monitor DRAM real time information...