Rochester Electronics Datasheets for DRAM and SDRAM Memory Chips
Dynamic random access memory (DRAM) chips are single-transistor memory cells that use small capacitors to store each bit of memory in an addressable format that consists of rows and columns. Because capacitors are unable to hold a charge indefinitely, DRAM memory chips require a near-constant pulse of current to retain stored information.
DRAM and SDRAM Memory Chips: Learn more
| Product Name | Notes |
|---|---|
| 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) | |
| 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) | |
| 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) | |
| IS42S16100 - 16M, 3.3V, SDRAM, 1Mx16, 143Mhz, 50 pin TSOP II (400 mil) | |
| IS42S16160 - 256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) | |
| IS42S16160 - 256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 pin TSOP II, | |
| IS42S16160 - 256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 pin TSOP II | |
| IS42S16320 - 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 ball BGA (8mmx13mm) | |
| IS42S16320 - 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin TSOP II (400 mil), | |
| IS42S16320 - 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 pin TSOP II (400 mil) | |
| IS42S16400 - 64M, 3.3V, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8mmx8mm), | |
| IS42S16400 - 64M, 3.3V, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8mmx8mm) | |
| IS42S16400 - 64M, 3.3V, SDRAM, 4Mx16, 166Mhz, 54 pin TSOP II | |
| IS42S32160 - 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II,, | |
| IS42S32160 - 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II, | |
| IS42S32160 - 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm), | |
| IS42S32200 - 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) | |
| IS42S32200 - 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 90 ball BGA (8mmx13mm) | |
| IS42S32400 - 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 86 pin TSOP II (400 mil) | |
| IS42S32800 - 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II | |
| S70KL1283 - 128 Mb (16 MB), HyperRAM Self-Refresh DRAM | |
| S70KS1282 - 128 Mb (16 MB), HyperRAM Self-Refresh DRAM | |
| S80KS5122 - 512 Mb HYPERRAM self-refresh dynamic RAM (DRAM) with HYPERBUS interface | |
| S80KS5123 - 512 Mb HYPERRAM self-refresh dynamic RAM (DRAM) with Octal xSPI interface | |
| TMS4030JL - TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 |