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Rochester Electronics Datasheets for DRAM and SDRAM Memory Chips

Dynamic random access memory (DRAM) chips are single-transistor memory cells that use small capacitors to store each bit of memory in an addressable format that consists of rows and columns. Because capacitors are unable to hold a charge indefinitely, DRAM memory chips require a near-constant pulse of current to retain stored information.
DRAM and SDRAM Memory Chips: Learn more

Product Name Notes
IS42S16100 - 16M, 3.3V, SDRAM, 1Mx16, 143Mhz, 50 pin TSOP II (400 mil)
IS42S16400 - 64M, 3.3V, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8mmx8mm),
IS42S16400 - 64M, 3.3V, SDRAM, 4Mx16, 166 Mhz, 54 ball BGA (8mmx8mm)
IS42S16400 - 64M, 3.3V, SDRAM, 4Mx16, 166Mhz, 54 pin TSOP II
IS42S16800 - 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm),
IS42S16800 - 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm)
IS42S16800 - 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 pin TSOP II (400 mil)
IS42S32160 - 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II,,
IS42S32160 - 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 86 pin TSOP II,
IS42S32160 - 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm),
IS42S32160 - 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm)
IS42S32200 - 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil)
IS42S32200 - 64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 90 ball BGA (8mmx13mm)
IS42S32400 - 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 86 pin TSOP II (400 mil)
IS42S32400 - 128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm)
IS42S32800 - 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II
IS42S32800 - 256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm)