IC DRAM 512MBIT PARALLEL 54TFBGA
SDRAM Memory IC 512Mb (32M x 16) Parallel 167MHz 5.4ns 54-TW-BGA (8x13)
IC DRAM 512MBIT PAR 54TFBGA Product overview: IS42S16320F-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S16320F-6BLI
IS42S16320 - 512M, 3.3V, SDRAM, 32Mx16, 166MHz, 54 ball BGA (8mmx13mm)
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 921621-IS42S16320F-6
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: SDRAM Memory IC 512Mb (32M x 16) Parallel 167 MHz 5.4 ns 54-TW-BGA (8x13)
Package: 54-TFBGA
Package: Tray
Mounting: Surface Mount
Family Name: IS42S16320
Categories: Integrated Circuits (ICs)
Case / Package: 54-TW-BGA (8x13)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Balance
Quantity per package: 240
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 19 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
IC DRAM 512MBIT PARALLEL 54TFBGA
IC DRAM 512M PARALLEL 54TFBGA
IC DRAM 512MBIT PARALLEL 54TFBGA
SDRAM Memory IC 512Mbit Parallel 167 MHz 5.4 ns 54-TW-BGA (8x13)
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | Lingto Electronic Limited | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S16320F-6BLI | 706-IS42S16320F-6BLI-ND | 774-IS42S16320F-6BLI | IS42S16320F-6BLI | 921621-IS42S16320F-6BLI | IS42S16320F-6BLI | 413-IS42S16320F-6BLI | IS42S16320F-6BLI | IS42S16320F-6BLI |
| Product Name | Memory | Memory | Memory IC and Storage Component | Memory - SDRAM - IS42S16320F-6BLI | Memory | IC DRAM 512M PARALLEL 54TFBGA | Integrated Circuits (ICs) - Memory | Memory | |
| Memory Category | SDRAM; DRAM Chip | DRAM Chip | DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 167 MHz | 167 MHz | |||||||
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 536871 kbits | 512000 kbits | 512000 kbits |
