The S80KS5122GABHV020 is a 512 Mb HYPERRAM,Ñ¢ self-refresh dynamic RAM (DRAM) featuring a HYPERBUS,Ñ¢ interface, designed to operate at a voltage of 1.8 V. It supports a maximum clock rate of 200 MHz and utilizes DDR technology, allowing for data transfers on both edges of the clock, achieving a data throughput of up to 400 MBps (3,200 Mbps). The memory device includes a configurable burst length capability, supporting linear and wrapped burst modes of various lengths. This DRAM offers multiple power modes, including hybrid sleep and deep power down, with a maximum current consumption of 40 mA during burst operations and a standby current of 3.1 mA at 105 ¬8C. The device is packaged in a 24-ball FBGA and is available in several temperature grades, including industrial and automotive grades, with operating ranges from -40 ¬8C to +125 ¬8C. The technology is based on a 25-nm process, making it suitable for a variety of applications requiring efficient memory solutions.
PSRAM (Pseudo SRAM) Memory IC 512Mb (64M x 8) HyperBus 200MHz 35ns 24-FBGA (6x8)
S80KS5122 - 512 Mb HYPERRAM self-refresh dynamic RAM (DRAM) with HYPERBUS interface
PSRAM (Pseudo SRAM) Memory IC 512Mbit HyperBus 200 MHz 35 ns 24-FBGA (6x8)
DRAM, 512MBIT, -40 TO 105DEG C ROHS COMPLIANT: YES
| DigiKey | Rochester Electronics | Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 448-S80KS5122GABHV020-ND | S80KS5122GABHV020 | S80KS5122GABHV020 | S80KS5122GABHV020 | 29AK8417 |
| Product Name | Memory | Memory | Memory | Dram, 512Mbit, -40 To 105Deg C Rohs Compliant Cypress Infineon Technologies | |
| Memory Category | PSRAM | DRAM Chip | PSRAM; SRAM Chip | PSRAM; SRAM Chip | DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |||
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
