Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 800976-IS42S16160J-6
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Access Time: 5.4ns
Supplier Device Package: 54-TFBGA (8x8)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 166MHz
Memory Interface: Parallel
Manufacturer Package: 54-TFBGA
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 348
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V
SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5.4ns 54-TFBGA (8x8)
IC DRAM 256MBIT PAR 54TFBGA Product overview: IS42S16160J-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S16160J-6BLI
IS42S16160 - 256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm)
IC DRAM 256M PARALLEL 54TFBGA
IC DRAM 256MBIT PAR 54TFBGA
IC DRAM 256MBIT PARALLEL 54TFBGA
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)
IC DRAM 256MBIT PARALLEL 54TFBGA
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 800976-IS42S16160J-6BLI | IS42S16160J-6BLI-ND | 774-IS42S16160J-6BLI | IS42S16160J-6BLI | 413-IS42S16160J-6BLI | IS42S16160J-6BLI | IS42S16160J-6BLI | IS42S16160J-6BLI | IS42S16160J-6BLI |
| Product Name | Memory - SDRAM - IS42S16160J-6BLI | Memory | Memory IC and Storage Component | IC DRAM 256M PARALLEL 54TFBGA | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Memory | |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | SDRAM; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Supply Voltage | 3V ~ 3.6V | 3V ~ 3.6V | 3 | -3.3V; 3V; 3.3V | -40degC ~ 85degC (TA) | 3.6V; 3V ~ 3.6V | 3V ~ 3.6V | ||
| Density | 256000 kbits | 256000 kbits | 268435 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits |
