IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42S32160F-6BLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32160F-6BLI
SDRAM Memory IC 512Mb (16M x 32) Parallel 167MHz 5.4ns 90-TFBGA (8x13)
Win Source Part Number: 1382336-IS42S32160F-
Category: Integrated Circuits (ICs)>Memory>Memory
Package: Tape & Reel (TR)
Standard Package: 2,500 pcs
Technology: SDRAM
Memory Type: Volatile
Memory Size: 512Mbit
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 167 MHz
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS42S32160
Memory Organization: 16M x 32
Moisture Sensitivity Level (MSL): 3 (168 Hours)
IS42S32160 - 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm),
SDRAM Memory IC 512Mbit Parallel 167 MHz 5.4 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PARALLEL 90TFBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS42S32160F-6BLI-TR | IS42S32160F-6BLI-TR-ND | 1382336-IS42S32160F-6BLI-TR | IS42S32160F-6BLI-TR | IS42S32160F-6BLI-TR | IS42S32160F-6BLI-TR | IS42S32160F-6BLI-TR |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Integrated Circuits (ICs) - Memory | |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 6 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | ||
| Number of Words | 4000 k |
