SDRAM Memory IC 512Mb (16M x 32) Parallel 167MHz 5.4ns 90-TFBGA (8x13)
IS42S32160 - 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm),
Win Source Part Number: 1382336-IS42S32160F-
Category: Integrated Circuits (ICs)>Memory>Memory
Package: Tape & Reel (TR)
Standard Package: 2,500 pcs
Technology: SDRAM
Memory Type: Volatile
Memory Size: 512Mbit
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 167 MHz
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS42S32160
Memory Organization: 16M x 32
Moisture Sensitivity Level (MSL): 3 (168 Hours)
IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PARALLEL 90TFBGA
SDRAM Memory IC 512Mbit Parallel 167 MHz 5.4 ns 90-TFBGA (8x13)
| DigiKey | Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S32160F-6BLI-TR-ND | IS42S32160F-6BLI-TR | 1382336-IS42S32160F-6BLI-TR | IS42S32160F-6BLI-TR | IS42S32160F-6BLI-TR | IS42S32160F-6BLI-TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Integrated Circuits (ICs) - Memory | Memory | Memory | |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | ||
| Package Type | 90-TFBGA | BGA; BGA90 | BGA | BGA; 90-TFBGA |
