Wolfspeed Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more

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Product Name Notes
PXAC180602MD-V1-R500
PXAC200902FC-V1-R2
PXAC241702FC-V1
WAB300M12BM3
WAB400M12BM3
WAS110M12BM2
WAS110M12BM2T
WAS175M12BM3
WAS175M12BM3T
WAS300M12BM2
WAS300M12BM2T
WAS310M17BM3
WAS310M17BM3T
WAS350M12BM3
WAS350M12BM3T
WAS530M12BM3
WAS530M12BM3T
WS1A2639-V1-R3K
WS1A3640-V1-R1
WS1A3940-V1-R3K
High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz -- PTVA127002EV-V1
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz -- PXAC192908FV-V1
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include...
High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz -- PXAC200902FC-V1
The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz -- PXAC201202FC-V2
The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it...
High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz -- PXAC201602FC-V1
The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features...
High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz -- PXAC203302FV-V1
The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include...
High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz -- PXAD184218FV-V1
The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features...
High Power RF LDMOS FET 430 W, 28 V, 1805 – 1880 MHz -- PXAE183708NB-V1
The PXAE183708NB is a 430-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz -- PXFC191507FC-V1
The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz -- PXFC192207FH-V3
The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz -- PXFE181507FC-V1
The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz -- PXFE211507FC-V1
The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching,...

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