Wolfspeed High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz PTVA120251EA-V2

Description
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Unmatched input and output High gain and efficiency Integrated ESD protection ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001 Low thermal resistance Excellent ruggedness Pb-free and RoHS-compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at POUT = 25 W, under CW conditions
  • High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz - PTVA120251EA-V2 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Unmatched input and output High gain and efficiency Integrated ESD protection ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001 Low thermal resistance Excellent ruggedness Pb-free and RoHS-compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at POUT = 25 W, under CW conditions
Datasheet

Suppliers

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High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz - PTVA120251EA-V2 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz
PTVA120251EA-V2
High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz PTVA120251EA-V2
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Unmatched input and output High gain and efficiency Integrated ESD protection ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001 Low thermal resistance Excellent ruggedness Pb-free and RoHS-compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at POUT = 25 W, under CW conditions

The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Unmatched input and output
  • High gain and efficiency
  • Integrated ESD protection
  • ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS-compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at POUT = 25 W, under CW
  • conditions
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTVA120251EA-V2
Product Name High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz
Transistor Technology / Material High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz
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