Wolfspeed High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz PXAC192908FV-V1

Description
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetric Doherty design Main: P1dB = 120 W Typ Peak: P1dB = 220 W Typ Typical Pulsed CW performance, 1990 MHz, 28 V, combined outputs Output power at P1dB = 240 W Efficiency = 54% Gain = 14 dB Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power Integrated ESD protection Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant
  • High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz - PXAC192908FV-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetric Doherty design Main: P1dB = 120 W Typ Peak: P1dB = 220 W Typ Typical Pulsed CW performance, 1990 MHz, 28 V, combined outputs Output power at P1dB = 240 W Efficiency = 54% Gain = 14 dB Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power Integrated ESD protection Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant
Datasheet

Suppliers

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High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz - PXAC192908FV-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz
PXAC192908FV-V1
High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz PXAC192908FV-V1
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetric Doherty design Main: P1dB = 120 W Typ Peak: P1dB = 220 W Typ Typical Pulsed CW performance, 1990 MHz, 28 V, combined outputs Output power at P1dB = 240 W Efficiency = 54% Gain = 14 dB Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power Integrated ESD protection Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant

The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband internal input and output matching
  • Asymmetric Doherty design
    • Main: P1dB = 120 W Typ
    • Peak: P1dB = 220 W Typ
  • Typical Pulsed CW performance, 1990 MHz, 28 V, combined outputs
    • Output power at P1dB = 240 W
    • Efficiency = 54%
    • Gain = 14 dB
  • Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power
  • Integrated ESD protection
  • Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PXAC192908FV-V1
Product Name High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz
Transistor Technology / Material High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz
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