The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual path design, input and output matching, high gain and a thermally enhanced push-pull package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Features
Broadband internal input and output matching
Asymmetric Doherty design
Main: P1dB = 35 W Typ
Peak: P1dB = 55 W Typ
Typical CW performance, 1920 MHz, 26 V
Output power at P1dB = 50 W
Efficiency = 58%
Gain = 16.6 dB
Capable of handling 10:1 VSWR @28 V, 90 W (CW) output power
Integrated ESD protection
ESD Rating: Human Body Model, Class 1C (per ANSI/ESDA/JEDEC JS-001)
Low thermal resistance
Pb-free and RoHS compliant
The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual path design, input and output matching, high gain and a thermally enhanced push-pull package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Features
- Broadband internal input and output matching
- Asymmetric Doherty design
- Main: P1dB = 35 W Typ
- Peak: P1dB = 55 W Typ
- Typical CW performance, 1920 MHz, 26 V
- Output power at P1dB = 50 W
- Efficiency = 58%
- Gain = 16.6 dB
- Capable of handling 10:1 VSWR @28 V, 90 W (CW) output power
- Integrated ESD protection
- ESD Rating: Human Body Model, Class 1C (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant
