Wolfspeed High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz PXAC201602FC-V1

Description
The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Asymmetric Doherty design Main: 55 W Typ Peak: 85 W Typ Broadband internal matching Pulsed CW performance, 1960 MHz, 28 V Output power at P1dB = 100 W Main: 55 W Typ (P1dB) Peak: 85 W Typ (P1dB) CW performance in a Doherty configuration, 2100 MHz, 28 V Output power at P1dB = 100 W Gain = 18 dB Efficiency = 55% Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power Integrated ESD protection Human Body Model Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant Can be operated with IDQ of up to 700 mA (not to exceed maximum ratings limits)
  • High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz - PXAC201602FC-V1 - Wolfspeed
    Wolfspeed
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1086470-PXAC201602FC-V1 - Win Source Electronics
    Win Source Electronics
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Description
The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Asymmetric Doherty design Main: 55 W Typ Peak: 85 W Typ Broadband internal matching Pulsed CW performance, 1960 MHz, 28 V Output power at P1dB = 100 W Main: 55 W Typ (P1dB) Peak: 85 W Typ (P1dB) CW performance in a Doherty configuration, 2100 MHz, 28 V Output power at P1dB = 100 W Gain = 18 dB Efficiency = 55% Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power Integrated ESD protection Human Body Model Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant Can be operated with IDQ of up to 700 mA (not to exceed maximum ratings limits)
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Suppliers

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Supplier Links
High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz - PXAC201602FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz
PXAC201602FC-V1
High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz PXAC201602FC-V1
The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Asymmetric Doherty design Main: 55 W Typ Peak: 85 W Typ Broadband internal matching Pulsed CW performance, 1960 MHz, 28 V Output power at P1dB = 100 W Main: 55 W Typ (P1dB) Peak: 85 W Typ (P1dB) CW performance in a Doherty configuration, 2100 MHz, 28 V Output power at P1dB = 100 W Gain = 18 dB Efficiency = 55% Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power Integrated ESD protection Human Body Model Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant Can be operated with IDQ of up to 700 mA (not to exceed maximum ratings limits)

The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Asymmetric Doherty design
    • Main: 55 W Typ
    • Peak: 85 W Typ
  • Broadband internal matching
  • Pulsed CW performance, 1960 MHz, 28 V
    • Output power at P1dB = 100 W
    • Main: 55 W Typ (P1dB)
    • Peak: 85 W Typ (P1dB)
  • CW performance in a Doherty configuration, 2100 MHz, 28 V
    • Output power at P1dB = 100 W
    • Gain = 18 dB
    • Efficiency = 55%
  • Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power
  • Integrated ESD protection
  • Human Body Model Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Can be operated with IDQ of up to 700 mA

(not to exceed maximum ratings limits)

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1086470-PXAC201602FC-V1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
1086470-PXAC201602FC-V1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF 1086470-PXAC201602FC-V1
Win Source Part Number: 1086470-PXAC201602FC -V1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Tray Standard Package: 50 Voltage - Rated: 65 V Frequency: 2.02GHz Current - Test: 360 mA Gain: 17.7dB Transistor Type: LDMOS Voltage - Test: 28 V Power - Output: 22.5W Package / Case: H-37248-4 Supplier Device Package: H-37248-4 ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 3 (168 Hours) HTSUS: 8541.29.0095 Mfr: Wolfspeed, Inc. Other Names: PXAC201602FCV1XWSA1, PXAC201602FCV1XWSA1- ND,SP001212218

Win Source Part Number: 1086470-PXAC201602FC-V1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Package: Tray
Standard Package: 50
Voltage - Rated: 65 V
Frequency: 2.02GHz
Current - Test: 360 mA
Gain: 17.7dB
Transistor Type: LDMOS
Voltage - Test: 28 V
Power - Output: 22.5W
Package / Case: H-37248-4
Supplier Device Package: H-37248-4
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Mfr: Wolfspeed, Inc.
Other Names: PXAC201602FCV1XWSA1,PXAC201602FCV1XWSA1-ND,SP001212218

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Technical Specifications

  Wolfspeed Win Source Electronics
Product Category RF Transistors RF MOSFET Transistors
Product Number PXAC201602FC-V1 1086470-PXAC201602FC-V1
Product Name High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
Transistor Technology / Material High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz
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