Wolfspeed High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz PTFC210202FC-V1

Description
The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Input matched Typical CW performance, 2170 MHz, 28 V, combined outputs output power at P1dB = 28 W Efficiency = 62% Gain = 20.9 dB Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant
  • High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz - PTFC210202FC-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Input matched Typical CW performance, 2170 MHz, 28 V, combined outputs output power at P1dB = 28 W Efficiency = 62% Gain = 20.9 dB Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant
Datasheet

Suppliers

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High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz - PTFC210202FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz
PTFC210202FC-V1
High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz PTFC210202FC-V1
The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Input matched Typical CW performance, 2170 MHz, 28 V, combined outputs output power at P1dB = 28 W Efficiency = 62% Gain = 20.9 dB Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant

The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Input matched
  • Typical CW performance, 2170 MHz, 28 V, combined outputs
    • output power at P1dB = 28 W
    • Efficiency = 62%
    • Gain = 20.9 dB
  • Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power
  • Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTFC210202FC-V1
Product Name High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz
Transistor Technology / Material High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz
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