Wolfspeed High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz PTVA120501EA-V1

Description
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input matching High gain and efficiency Typical Pulsed CW performance, 1200 – 1400MHz, 50 V, 300 μs pulse width, 10 % duty cycle, class AB Output power at P1dB = 54 W Efficiency = 55% Gain = 16 dB Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 50 W peak under RF pulse, 300 μS, 10% duty cycle.
  • High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz - PTVA120501EA-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input matching High gain and efficiency Typical Pulsed CW performance, 1200 – 1400MHz, 50 V, 300 μs pulse width, 10 % duty cycle, class AB Output power at P1dB = 54 W Efficiency = 55% Gain = 16 dB Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 50 W peak under RF pulse, 300 μS, 10% duty cycle.
Datasheet

Suppliers

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Product
Description
Supplier Links
High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz - PTVA120501EA-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
PTVA120501EA-V1
High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz PTVA120501EA-V1
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input matching High gain and efficiency Typical Pulsed CW performance, 1200 – 1400MHz, 50 V, 300 μs pulse width, 10 % duty cycle, class AB Output power at P1dB = 54 W Efficiency = 55% Gain = 16 dB Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 50 W peak under RF pulse, 300 μS, 10% duty cycle.

The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband input matching
  • High gain and efficiency
  • Typical Pulsed CW performance, 1200 – 1400MHz,
  • 50 V, 300 μs pulse width, 10 % duty cycle, class AB
    • Output power at P1dB = 54 W
    • Efficiency = 55%
    • Gain = 16 dB
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 50 W peak under RF pulse,
  • 300 μS, 10% duty cycle.
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTVA120501EA-V1
Product Name High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
Transistor Technology / Material High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
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