Wolfspeed High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz PTFC270101M-V1

Description
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small over molded plastic package. Features Unmatched input and output Typical CW performance, 2170 MHz, 28 V Output power @ P1dB = 10 W Gain = 20 dB Efficiency = 60% Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power Integrated ESD protection Pb-free and RoHS compliant
  • High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz - PTFC270101M-V1 - Wolfspeed
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Datasheet
Description
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small over molded plastic package. Features Unmatched input and output Typical CW performance, 2170 MHz, 28 V Output power @ P1dB = 10 W Gain = 20 dB Efficiency = 60% Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power Integrated ESD protection Pb-free and RoHS compliant
Datasheet

Suppliers

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High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz - PTFC270101M-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz
PTFC270101M-V1
High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz PTFC270101M-V1
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small over molded plastic package. Features Unmatched input and output Typical CW performance, 2170 MHz, 28 V Output power @ P1dB = 10 W Gain = 20 dB Efficiency = 60% Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power Integrated ESD protection Pb-free and RoHS compliant

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small over molded plastic package.

Features

  • Unmatched input and output
  • Typical CW performance, 2170 MHz, 28 V
    • Output power @ P1dB = 10 W
    • Gain = 20 dB
    • Efficiency = 60%
  • Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power
  • Integrated ESD protection
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTFC270101M-V1
Product Name High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz
Transistor Technology / Material High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz
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