Wolfspeed High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz PXFE211507FC-V1

Description
The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Typical Pulsed CW performance, 2140 MHz, 28 V, single side, 16 μs, 10% duty cycle, class AB test Output power at P1dB = 172 W Output power at P3dB = 208 W Efficiency at P3dB = 64.4% Gain = 20.3 dB Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant
Datasheet
Description
The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Typical Pulsed CW performance, 2140 MHz, 28 V, single side, 16 μs, 10% duty cycle, class AB test Output power at P1dB = 172 W Output power at P3dB = 208 W Efficiency at P3dB = 64.4% Gain = 20.3 dB Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant
Datasheet

Suppliers

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High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz - PXFE211507FC-V1 - Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz
PXFE211507FC-V1
High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz PXFE211507FC-V1
The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Typical Pulsed CW performance, 2140 MHz, 28 V, single side, 16 μs, 10% duty cycle, class AB test Output power at P1dB = 172 W Output power at P3dB = 208 W Efficiency at P3dB = 64.4% Gain = 20.3 dB Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant

The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband internal input and output matching
  • Typical Pulsed CW performance, 2140 MHz, 28 V, single side, 16 μs, 10% duty cycle, class AB test
    • Output power at P1dB = 172 W
    • Output power at P3dB = 208 W
    • Efficiency at P3dB = 64.4%
    • Gain = 20.3 dB
  • Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PXFE211507FC-V1
Product Name High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz
Transistor Technology / Material High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz
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