Wolfspeed Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

Product Name Notes
2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET -- C2M1000170J Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Surface mount package with separate driver pin
2nd-Generation Z-FET® 1200-V, 40-mΩ, Silicon-Carbide MOSFET -- C2M0040120D
2nd-Generation Z-FET® 1200-V, 40-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0040B
2nd-Generation Z-FET® 1200-V, 80-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0080B
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Resistant to latch-up Easy to parallel and simple to drive
2nd-Generation Z-FET® 1200-V, 80-mΩ, Silicon-Carbide MOSFET -- C2M0080120D Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Resistant to latch-up Easy to parallel and simple to drive Halogen-free, RoHS-compliant
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET -- C2M0025120D Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up Avalanche ruggedness
2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET -- C2M0280120D Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Resistant to latch-up Easy to parallel and simple to drive Avalanche ruggedness
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET -- C2M0160120D Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Resistant to latch-up Easy to parallel and simple to drive Halogen-free, RoHS-compliant
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0160B Features Uses Wolfspeed 2nd-generation advanced SiC MOSFET technology High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Easy to parallel and simple to drive
2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET -- C2M1000170D C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc. Features High-speed switching with...
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120090D
Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0280090D
Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging...
High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz -- PTAB182002FC-V1 The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz -- PTAC210802FC-V1 The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz -- PTAC240502FC-V1 The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz -- PTAC260302FC-V1 The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main)...
High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz -- PTFC210202FC-V1 The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS...
High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz -- PTFC260202FC-V1 The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS...
High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz -- PTFC261402FC-V1 The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplify er applications in the 2620 to 2690 MHz frequency band. Features include input and output...
High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz -- PTFC262157FH-V1 The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for...
High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz -- PTFC262808FV-V1 The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 5 W, 28 V, 900 – 2700 MHz -- PTFC270051M-V2 The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz -- PTFC270101M-V1 The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz -- PTRA082808NF-V1 The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz -- PTRA083818NF-V1 The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz -- PTRA084808NF-V1 The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 734 to 821 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz -- PTRA087008NB The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process,...
High Power RF LDMOS FET 330 W, 50 V, 746 – 768 MHz -- PTRA093302FC-V1 The PTRA093302FC is a 330-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 746 MHz to 768 MHz frequency band. Features...
High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz -- PTRA093818NF-V1 The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 208 W, 48 V, 746 – 960 MHz -- PTRA094252FC-V1 The PTRA094252FC is a 208-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 746 to 960 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz -- PTRA094808NF-V1 The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz -- PTRA097008NB-V1 The PTRA097008NB is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz -- PTVA030121EA-V1 The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package.
High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz -- PTVA035002EV-V1 The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
High Power RF LDMOS FETs 250 W, 50 V, 470 – 806 MHz -- PTVA042502EFC-V1 The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package...
High Power RF LDMOS FETs 350 W, 50 V, 470 – 860 MHz -- PTVA043502EFC-V1 The PTVA043502EC and PTVA043502FC are LDMOS FETs designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package...
High Power RF LDMOS FET 240 W, 48 V, 746 – 821 MHz -- PTVA082407NF-V1 The PTVA082407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design...
High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz -- PTVA084007NF-V1 The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design...
High Power RF LDMOS FET 240 W, 48 V, 869 – 960 MHz -- PTVA092407NF-V2 The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design...
High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz -- PTVA101K02EV-V1 The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz -- PTVA102001EA-V1 The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with...
High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz -- PTVA104501EH-V1 The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FET 12 W, 50 V, 500 – 1400 MHz -- PTVA120121M-V1 The PTVA120121M LDMOS FET is a 12-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz -- PTVA120251EA-V2 The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with...
High Power RF LDMOS FET 25 W, 48 V, 500 – 1400 MHz -- PTVA120252MT-V1 The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz -- PTVA120501EA-V1 The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz -- PTVA123501EC-V2
High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz -- PTVA123501FC-V1
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package...
High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz -- PTVA127002EV-V1 The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz -- PXAC182002FC-V1 The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include...
High Power RF LDMOS FET 240 W, 28 V, 1805 – 1880 MHz -- PXAC182908FV-V1 The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include...
High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz -- PXAC192908FV-V1 The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include...
High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz -- PXAC200902FC-V1 The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz -- PXAC201202FC-V2 The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it...
High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz -- PXAC201602FC-V1 The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features...
High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz -- PXAC203302FV-V1 The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include...
High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz -- PXAC210552FC-V1 The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features...
High Power RF LDMOS FET 320 W, 28 V, 2110 – 2200 MHz -- PXAC213308FV-V1 The PXAC213308FV is a 320-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2100 to 2200 MHz frequency band. Features...
High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400 MHz -- PXAC241002FC-V1 The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz -- PXAC241702FC-V1 The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features...
High Power RF LDMOS FET 350 W, 28 V, 2300 – 2400 MHz -- PXAC243502FV-V1 The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design...
High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz -- PXAC260602FC-V1 The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include...
High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz -- PXAC261002FC-V1 The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include...
High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz -- PXAC261212FC-V1 The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path...
High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz -- PXAD184218FV-V1 The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features...
High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz -- PXAD214218FV-V1 The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features...
High Power RF LDMOS FET 430 W, 28 V, 1805 – 1880 MHz -- PXAE183708NB-V1 The PXAE183708NB is a 430-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz -- PXFC191507FC-V1 The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz -- PXFC192207FH-V3 The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz -- PXFE181507FC-V1 The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz -- PXFE211507FC-V1 The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching,...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-1200V-0013A This new device achieves a remarkable 13mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-1200V-0075A This new device achieves a remarkable 75mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0030090K Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing with wide creepage and clearance distance between drain and...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0075120J
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0075120K
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0075120D Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made...
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- C2M0045170P
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- C2M0080170P
Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby...
E-Series Automotive Silicon Carbide MOSFET -- E3M0120090D Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of SiC MOSFETs. The Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available in the industry.
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0065100J
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0065100K
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120100J
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120100K
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle...
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM2-1700-0045B Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and...
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- C2M0045170D Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0065090D Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0065090J
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120090J
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0280090J
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase...
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM2-1700-0080B Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first SiC MOSFET products rated at 1700V. Optimized for high-frequency power electronics applications, including High-voltage DC/DC converters. Capable...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-0900-0010A Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device achieves a remarkable 10mΩ Rds(on) and is capable of 900V blocking voltage across the...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-1000-0065B Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device is capable of 1000V blocking voltage across the entire operating temperature range, thereby greatly reducing...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-0900-0065B Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device is capable of 900V blocking voltage across the entire operating temperature range, thereby greatly reducing...
Silicon Carbide Power MOSFET Die C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-0900-0030A Wolfspeed introduces the availability its latest C3MTM SiC MOSFET technology in die form. The new device is rated 30mΩ Rds(on) and capable of 900V blocking voltage across the entire...
2nd-Generation Z-FET® 1200-V, 25-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0025B High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Resistant to latch-up Easy to parallel and simple to drive