Wolfspeed Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

Product Name	Notes
C2M1000170J-TR C3M0015065D C3M0015065K C3M0016120D C3M0016120K C3M0021120D C3M0021120K C3M0025065D C3M0025065J1 C3M0025065J1-TR C3M0025065K C3M0032120D C3M0032120J1 C3M0032120K C3M0040120D C3M0040120J1 C3M0040120J1-TR C3M0040120K C3M0045065D C3M0045065J1 C3M0045065J1-TR C3M0045065K C3M0045065L C3M0045065L-TR C3M0060065D C3M0060065J C3M0060065J-TR C3M0060065K C3M0060065L C3M0060065L-TR C3M0065090J C3M0065090J-TR C3M0065100J-TR C3M0075120D-A C3M0075120J-TR C3M0075120K-A C3M0120065D C3M0120065J C3M0120065J-TR C3M0120065K C3M0120065L C3M0120065L-TR C3M0120090J-TR C3M0120100J-TR C3M0160120D C3M0160120J C3M0160120J-TR C3M0280090J C3M0280090J-TR C3M0350120D C3M0350120J C3M0350120J-TR C3M0900170D C3M0900170J-TR C3M0900170M C4MS025120J2-TR C4MS025120K C4MS025120K1 C4MS025120U2-TR C4MS036120J2-TR C4MS036120K C4MS036120K1 C4MS036120U2-TR C4MS047120J2-TR C4MS047120K C4MS047120K1 C4MS047120U2-TR C4MS065120J2-TR C4MS065120K C4MS065120K1 C4MS065120U2-TR C6D50065D1 C6D50065H CAB003M09DM3 CAB004M12GM4 CAB004M12GM4T CAB006A12GM3 CAB006A12GM3T CAB006M12GM3 CAB006M12GM3T CAB008A12GM3 CAB008A12GM3T CAB008M12GM3 CAB008M12GM3T CAB011A12GM3 CAB011A12GM3T CAB011M12FM3 CAB011M12FM3T CAB016M12FM3 CAB016M12FM3T CAB320M17XM3 CAB3R5M12DM4 CAB400M12XM3 CAB425M12XM3 CAB450M12XM3 CAB500M17HM3 CAB525F12XM3 CAB530M12BM3 CAB530M12BM3T CAB5R0A23GM4 CAB5R0A23GM4T CAB600M33LM3 CAB650M17HM3 CAB6R0A23GM4 CAB6R0A23GM4T CAB760M12HM3 CAB760M12HM3R CAB7R5A23GM4 CAB7R5A23GM4T CAR600M12HN6 CAR600M17HN6 CAS100H12AM1 CAS110M12BM2 CAS120M12BM2 CAS175M12BM3 CAS175M12BM3T CAS300M12BM2 CAS300M17BM2 CAS310M17BM3 CAS310M17BM3T CAS325M12HM2 CAS350M12BM3 CAS350M12BM3T CAS380M17HM3 CAS480M12HM3 CAS530M12BM3 CAS530M12BM3T CBB011M12GM4 CBB011M12GM4T CBB021M12FM3 CBB021M12FM3T CBB032M12FM3 CBB032M12FM3T CCB016M12GM3 CCB016M12GM3T CCB021M12FM3 CCB021M12FM3T CCB032M12FM3 CCB032M12FM3T CCS020M12CM2 CCS050M12CM2 CG2H40045F CGH27030P CGH40010F CGH40010P CGH40025F CGH40035F CGH40045F CGH55015F2 CGH55030F2 CGHV27100F CHB011M12GM4 CHB011M12GM4T CMF10120D CMF20120D CPM3-0650-0015A CPM3-0650-0060A CPM3-0900-0010A-FY6 CPM3-0900-0065A CPM3-0900-0065A-FY6 CPM3-0900-0065B-FE4 CPM3-1200-0013A CPM3-1200-0016A CPM3-1200-0021A CPM3-1200-0032A CPM3-1200-0075A CPMF-1200-S080B CPMF-1200-S160B E3M0016120K E3M0021120K E3M0032120K E3M0040120K E3M0045065K E3M0060065D E3M0060065K E3M0065090D E3M0075120D E3M0075120K E3M0120090J E3M0120090J-TR E3M0160120D E3M0160120K E3M0280090D E3M0900170D EAB450M12XM3 ECB2R1M12YM3 ECB2R8M12YM3 ECB4R3M12YM3 EPM3-1200-0017D-FY6 HAS175M12BM3T HAS310M17BM3 HAS310M17BM3T HAS350M12BM3T HAS530M12BM3T PC3M0045065L PC3M0060065L PTFA080551E-V4-R0 PTFB092707FH-V1-R0 PTFB182503FL-V2-R250 PTFC270101M-V1-R1K PTVA092407NF-V1-R5 PTVA120252MT-V1-R1K PXAC241702FC-V1 WAB300M12BM3 WAB400M12BM3 WAS110M12BM2 WAS175M12BM3 WAS175M12BM3T WAS300M12BM2 WAS310M17BM3 WAS310M17BM3T WAS350M12BM3 WAS350M12BM3T WAS530M12BM3 WAS530M12BM3T WS1A2639-V1-R3K WS1A3640-V1-R1 WS1A3940-V1-R3K
2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET -- C2M1000170J	Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Surface mount package with separate driver pin
2nd-Generation Z-FET® 1200-V, 40-mΩ, Silicon-Carbide MOSFET -- C2M0040120D 2nd-Generation Z-FET® 1200-V, 40-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0040B 2nd-Generation Z-FET® 1200-V, 80-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0080B	Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Resistant to latch-up Easy to parallel and simple to drive
2nd-Generation Z-FET® 1200-V, 80-mΩ, Silicon-Carbide MOSFET -- C2M0080120D	Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Resistant to latch-up Easy to parallel and simple to drive Halogen-free, RoHS-compliant
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET -- C2M0025120D	Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up Avalanche ruggedness
2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET -- C2M0280120D	Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Resistant to latch-up Easy to parallel and simple to drive Avalanche ruggedness
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET -- C2M0160120D	Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Resistant to latch-up Easy to parallel and simple to drive Halogen-free, RoHS-compliant
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0160B	Features Uses Wolfspeed 2nd-generation advanced SiC MOSFET technology High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Easy to parallel and simple to drive
2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET -- C2M1000170D	C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc. Features High-speed switching with...
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120090D Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0280090D	Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging...
High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz -- PTAB182002FC-V1	The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz -- PTAC210802FC-V1	The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz -- PTAC240502FC-V1	The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz -- PTFC210202FC-V1	The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS...
High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz -- PTFC270101M-V1	The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz -- PTRA083818NF-V1	The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz -- PTRA087008NB	The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process,...
High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz -- PTVA030121EA-V1	The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package.
High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz -- PTVA035002EV-V1	The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
High Power RF LDMOS FETs 250 W, 50 V, 470 – 806 MHz -- PTVA042502EFC-V1	The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package...
High Power RF LDMOS FETs 350 W, 50 V, 470 – 860 MHz -- PTVA043502EFC-V1	The PTVA043502EC and PTVA043502FC are LDMOS FETs designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package...
High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz -- PTVA101K02EV-V1	The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz -- PTVA102001EA-V1	The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with...
High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz -- PTVA104501EH-V1	The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz -- PTVA120251EA-V2	The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with...
High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz -- PTVA120501EA-V1	The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz -- PTVA123501FC-V1	The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package...
High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz -- PTVA127002EV-V1	The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz -- PXAC192908FV-V1	The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include...
High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz -- PXAC200902FC-V1	The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz -- PXAC201202FC-V2	The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it...
High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz -- PXAC201602FC-V1	The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features...
High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz -- PXAC203302FV-V1	The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include...
High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz -- PXAD184218FV-V1	The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features...
High Power RF LDMOS FET 430 W, 28 V, 1805 – 1880 MHz -- PXAE183708NB-V1	The PXAE183708NB is a 430-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz -- PXFC191507FC-V1	The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz -- PXFC192207FH-V3	The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz -- PXFE181507FC-V1	The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz -- PXFE211507FC-V1	The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching,...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-1200V-0013A	This new device achieves a remarkable 13mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-1200V-0075A	This new device achieves a remarkable 75mΩ Rds(on) and is capable of 1200V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. It can be applied...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0030090K	Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing with wide creepage and clearance distance between drain and...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0075120J Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0075120K	Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0075120D	Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made...
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- C2M0045170P Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- C2M0080170P	Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby...
E-Series Automotive Silicon Carbide MOSFET -- E3M0120090D	Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of SiC MOSFETs. The Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available in the industry.
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0065100J Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0065100K Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120100J Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120100K	Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle...
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM2-1700-0045B	Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and...
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- C2M0045170D	Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0065090D	Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120090J	Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase...
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM2-1700-0080B	Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first SiC MOSFET products rated at 1700V. Optimized for high-frequency power electronics applications, including High-voltage DC/DC converters. Capable...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-0900-0010A	Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device achieves a remarkable 10mΩ Rds(on) and is capable of 900V blocking voltage across the...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-1000-0065B	Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device is capable of 1000V blocking voltage across the entire operating temperature range, thereby greatly reducing...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-0900-0065B	Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device is capable of 900V blocking voltage across the entire operating temperature range, thereby greatly reducing...
Silicon Carbide Power MOSFET Die C3M Planar MOSFET Technology N-Channel Enhancement Mode -- CPM3-0900-0030A	Wolfspeed introduces the availability its latest C3MTM SiC MOSFET technology in die form. The new device is rated 30mΩ Rds(on) and capable of 900V blocking voltage across the entire...
6-W RF Power GaN HEMT -- CGH40006P	Wolfspeed’s CGH40006P is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40006P, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
6-W RF Power GaN HEMT, Plastic -- CGH40006S	Wolfspeed’s CGH40006S is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40006S, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems -- CGHV31500F	Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications.
70-W, 0.5-3.0 GHz, GaN HEMT -- CG2H30070F	Wolfspeed’s CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior...
120-W RF Power GaN HEMT -- CGH40120F	Wolfspeed’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
180-W RF Power GaN HEMT -- CGH40180PP	Wolfspeed’s CGH40180PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40180PP, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier -- CGHV96100F2	Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
2nd-Generation Z-FET® 1200-V, 25-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0025B	High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Resistant to latch-up Easy to parallel and simple to drive

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