Wolfspeed High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz PXFC192207FH-V3

Description
The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input and output matching Typical Pulsed CW performance, 1990 MHz, 28 V, 16 μs pulse width, 10 % duty cycle, class AB Output power at P1dB = 220 W Efficiency = 55% Gain = 20 dB Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR Output power = 50 W Efficiency = 29% Gain = 20 dB ACPR = –34 dBc @ 5 MHz Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant
Datasheet
Description
The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input and output matching Typical Pulsed CW performance, 1990 MHz, 28 V, 16 μs pulse width, 10 % duty cycle, class AB Output power at P1dB = 220 W Efficiency = 55% Gain = 20 dB Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR Output power = 50 W Efficiency = 29% Gain = 20 dB ACPR = –34 dBc @ 5 MHz Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant
Datasheet

Suppliers

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Supplier Links
High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz - PXFC192207FH-V3 - Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz
PXFC192207FH-V3
High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz PXFC192207FH-V3
The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input and output matching Typical Pulsed CW performance, 1990 MHz, 28 V, 16 μs pulse width, 10 % duty cycle, class AB Output power at P1dB = 220 W Efficiency = 55% Gain = 20 dB Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR Output power = 50 W Efficiency = 29% Gain = 20 dB ACPR = –34 dBc @ 5 MHz Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant

The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband input and output matching
  • Typical Pulsed CW performance, 1990 MHz, 28 V, 16 μs pulse width, 10 % duty cycle, class AB
    • Output power at P1dB = 220 W
    • Efficiency = 55%
    • Gain = 20 dB
  • Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR
    • Output power = 50 W
    • Efficiency = 29%
    • Gain = 20 dB
    • ACPR = –34 dBc @ 5 MHz
  • Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power
  • Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PXFC192207FH-V3
Product Name High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz
Transistor Technology / Material High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz
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