Wolfspeed High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz PTVA101K02EV-V1

Description
The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition, (32μS ON / 18μS OFF) X 80, LTDF = 6.4%.
Datasheet
Description
The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition, (32μS ON / 18μS OFF) X 80, LTDF = 6.4%.
Datasheet

Suppliers

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Product
Description
Supplier Links
High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz - PTVA101K02EV-V1 - Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
PTVA101K02EV-V1
High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz PTVA101K02EV-V1
The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition, (32μS ON / 18μS OFF) X 80, LTDF = 6.4%.

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband input matching
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S
  • pulse condition, (32μS ON / 18μS OFF) X 80, LTDF = 6.4%.
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTVA101K02EV-V1
Product Name High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
Transistor Technology / Material High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
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