Wolfspeed High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz PXAC203302FV-V1

Description
The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetrical Doherty design Main : P1dB = 130 W Typ Peak : P1dB = 200 W Typ Typical Pulsed CW performance, 2025 MHz, 28 V, combined outputs, Doherty Configuration Output power at P1dB = 250 W Efficiency = 55% Gain = 16 dB CW performance in a Doherty configuration, 2100 MHz, 28 V Output power at P1dB = 100 W Gain = 18 dB Efficiency = 55% Capable of handling 10:1 VSWR @28 V, 250 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant (not to exceed maximum ratings limits)
  • High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz - PXAC203302FV-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetrical Doherty design Main : P1dB = 130 W Typ Peak : P1dB = 200 W Typ Typical Pulsed CW performance, 2025 MHz, 28 V, combined outputs, Doherty Configuration Output power at P1dB = 250 W Efficiency = 55% Gain = 16 dB CW performance in a Doherty configuration, 2100 MHz, 28 V Output power at P1dB = 100 W Gain = 18 dB Efficiency = 55% Capable of handling 10:1 VSWR @28 V, 250 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant (not to exceed maximum ratings limits)
Datasheet

Suppliers

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High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz - PXAC203302FV-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz
PXAC203302FV-V1
High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz PXAC203302FV-V1
The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetrical Doherty design Main : P1dB = 130 W Typ Peak : P1dB = 200 W Typ Typical Pulsed CW performance, 2025 MHz, 28 V, combined outputs, Doherty Configuration Output power at P1dB = 250 W Efficiency = 55% Gain = 16 dB CW performance in a Doherty configuration, 2100 MHz, 28 V Output power at P1dB = 100 W Gain = 18 dB Efficiency = 55% Capable of handling 10:1 VSWR @28 V, 250 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant (not to exceed maximum ratings limits)

The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband internal input and output matching
  • Asymmetrical Doherty design
    • Main : P1dB = 130 W Typ
    • Peak : P1dB = 200 W Typ
  • Typical Pulsed CW performance, 2025 MHz, 28 V, combined outputs, Doherty Configuration
    • Output power at P1dB = 250 W
    • Efficiency = 55%
    • Gain = 16 dB
  • CW performance in a Doherty configuration, 2100 MHz, 28 V
    • Output power at P1dB = 100 W
    • Gain = 18 dB
    • Efficiency = 55%
  • Capable of handling 10:1 VSWR @28 V, 250 W (CW) output power
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant

(not to exceed maximum ratings limits)

Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PXAC203302FV-V1
Product Name High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz
Transistor Technology / Material High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz
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