Wolfspeed High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz PXAC201202FC-V2

Description
The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetric Doherty design Main: P1dB = 35 W Typ Peak: P1dB = 80 W Typ Broadband internal matching CW performance in a Doherty configuration, 1805 MHz, 28 V Output power = 100 W P1dB Gain = 17.3 dB at 17.8 W Avg Efficiency = 46% at 17.8 W Avg CW performance in a Doherty configuration, 2100 MHz, 28 V Output power = 15.8 W Avg Gain = 15.5 dB Efficiency = 46% Capable of handling 10:1 VSWR @ 28 V, 16 W (CW) output power Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant
  • High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz - PXAC201202FC-V2 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetric Doherty design Main: P1dB = 35 W Typ Peak: P1dB = 80 W Typ Broadband internal matching CW performance in a Doherty configuration, 1805 MHz, 28 V Output power = 100 W P1dB Gain = 17.3 dB at 17.8 W Avg Efficiency = 46% at 17.8 W Avg CW performance in a Doherty configuration, 2100 MHz, 28 V Output power = 15.8 W Avg Gain = 15.5 dB Efficiency = 46% Capable of handling 10:1 VSWR @ 28 V, 16 W (CW) output power Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant
Datasheet

Suppliers

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High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz - PXAC201202FC-V2 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz
PXAC201202FC-V2
High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz PXAC201202FC-V2
The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetric Doherty design Main: P1dB = 35 W Typ Peak: P1dB = 80 W Typ Broadband internal matching CW performance in a Doherty configuration, 1805 MHz, 28 V Output power = 100 W P1dB Gain = 17.3 dB at 17.8 W Avg Efficiency = 46% at 17.8 W Avg CW performance in a Doherty configuration, 2100 MHz, 28 V Output power = 15.8 W Avg Gain = 15.5 dB Efficiency = 46% Capable of handling 10:1 VSWR @ 28 V, 16 W (CW) output power Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant

The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband internal input and output matching
  • Asymmetric Doherty design
    • Main: P1dB = 35 W Typ
    • Peak: P1dB = 80 W Typ
  • Broadband internal matching
  • CW performance in a Doherty configuration, 1805 MHz, 28 V
    • Output power = 100 W P1dB
    • Gain = 17.3 dB at 17.8 W Avg
    • Efficiency = 46% at 17.8 W Avg
  • CW performance in a Doherty configuration, 2100 MHz, 28 V
    • Output power = 15.8 W Avg
    • Gain = 15.5 dB
    • Efficiency = 46%
  • Capable of handling 10:1 VSWR @ 28 V, 16 W (CW) output power
  • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PXAC201202FC-V2
Product Name High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz
Transistor Technology / Material High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz
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