Wolfspeed Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

Product Name Notes
400-W, 3300 – 3700-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems -- CGHV37400F Cree’s CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.3...
25-W, 5200 – 5900-MHz, 28 V, GaN MMIC for Radar Power Amplifiers -- CMPA5259025F Cree’s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 -...
50-W, 5200 – 5900-MHz, 28 V, GaN MMIC for Radar Power Amplifiers -- CMPA5259050F Cree’s CMPA5259050F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259050F ideal for 5.2 -...
35-W, 9.0 – 10.0-MHz, 28 V, GaN MMIC for Radar Power Amplifiers -- CMPA901A035F Cree's CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA901A035F ideal for 9 -...
30 W, DC - 6.0 GHz, GaN HEMT -- CGHV27030S The CGHV27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for...
High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz -- GTRA262802FC-V2 The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz -- GTRA263902FC-V2 The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz -- GTRA362002FC-V1 The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz -- GTRA362802FC-V1 The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz -- GTRA364002FC-V1 The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz -- GTRA374902FC-V1 The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz -- GTRA384802FC-V1 The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 – 1215 MHz -- GTVA101K42EV-V1 The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced...
High Power RF GaN on SiC HEMT 400 W, 50 V, 960 – 1215 MHz -- GTVA104001FA-V1 The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 700 W, 50 V, 960 – 1215 MHz -- GTVA107001EC-V1 The GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 - 1400 MHz -- GTVA123501FA-V1 The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT, 600W, 50V, 1200MHz to 1400MHz -- GTVA126001EC-FC-V1 The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the 1200 to 1400 MHz frequency band. They feature input matching, high efficiency,...
High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz -- GTVA212701FA-V2 The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequency band. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz -- GTVA220701FA-V1 The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz -- GTVA261701FA-V1 The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz -- GTVA261802FC-V1 The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package...
High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz -- GTVA262701FA-V2 The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced...
High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz -- GTVA263202FC-V1 The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 180 W, 50 V, 2700 – 3100 MHz -- GTVA311801FA-V1 The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequency band. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMTs 500 W, 50 V, 2900 – 3500 MHz -- GTVA355001EC-FC-V1 The GTVA355001EC and GTVA35501FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequency band. They feature input and output matching,...
High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz -- PTAB182002FC-V1 The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz -- PTAC210802FC-V1 The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz -- PTAC240502FC-V1 The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz -- PTAC260302FC-V1 The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main)...
High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz -- PTFC210202FC-V1 The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS...
High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz -- PTFC260202FC-V1 The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS...
High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz -- PTFC261402FC-V1 The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplify er applications in the 2620 to 2690 MHz frequency band. Features include input and output...
High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz -- PTFC262157FH-V1 The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for...
High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz -- PTFC262808FV-V1 The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 5 W, 28 V, 900 – 2700 MHz -- PTFC270051M-V2 The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz -- PTFC270101M-V1 The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz -- PTRA082808NF-V1 The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz -- PTRA083818NF-V1 The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz -- PTRA084808NF-V1 The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 734 to 821 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz -- PTRA087008NB The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process,...
High Power RF LDMOS FET 330 W, 50 V, 746 – 768 MHz -- PTRA093302FC-V1 The PTRA093302FC is a 330-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 746 MHz to 768 MHz frequency band. Features...
High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz -- PTRA093818NF-V1 The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 208 W, 48 V, 746 – 960 MHz -- PTRA094252FC-V1 The PTRA094252FC is a 208-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 746 to 960 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz -- PTRA094808NF-V1 The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz -- PTRA097008NB-V1 The PTRA097008NB is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz -- PTVA030121EA-V1 The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package.
High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz -- PTVA035002EV-V1 The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
High Power RF LDMOS FETs 250 W, 50 V, 470 – 806 MHz -- PTVA042502EFC-V1 The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package...
High Power RF LDMOS FETs 350 W, 50 V, 470 – 860 MHz -- PTVA043502EFC-V1 The PTVA043502EC and PTVA043502FC are LDMOS FETs designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package...
High Power RF LDMOS FET 240 W, 48 V, 746 – 821 MHz -- PTVA082407NF-V1 The PTVA082407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design...
High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz -- PTVA084007NF-V1 The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design...
High Power RF LDMOS FET 240 W, 48 V, 869 – 960 MHz -- PTVA092407NF-V2 The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design...
High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz -- PTVA101K02EV-V1 The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz -- PTVA102001EA-V1 The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with...
High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz -- PTVA104501EH-V1 The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FET 12 W, 50 V, 500 – 1400 MHz -- PTVA120121M-V1 The PTVA120121M LDMOS FET is a 12-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz -- PTVA120251EA-V2 The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with...
High Power RF LDMOS FET 25 W, 48 V, 500 – 1400 MHz -- PTVA120252MT-V1 The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz -- PTVA120501EA-V1 The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz -- PTVA123501EC-V2
High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz -- PTVA123501FC-V1
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package...
High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz -- PTVA127002EV-V1 The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz -- PXAC182002FC-V1 The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include...
High Power RF LDMOS FET 240 W, 28 V, 1805 – 1880 MHz -- PXAC182908FV-V1 The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include...
High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz -- PXAC192908FV-V1 The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include...
High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz -- PXAC200902FC-V1 The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz -- PXAC201202FC-V2 The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it...
High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz -- PXAC201602FC-V1 The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features...
High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz -- PXAC203302FV-V1 The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include...
High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz -- PXAC210552FC-V1 The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features...
High Power RF LDMOS FET 320 W, 28 V, 2110 – 2200 MHz -- PXAC213308FV-V1 The PXAC213308FV is a 320-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2100 to 2200 MHz frequency band. Features...
High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400 MHz -- PXAC241002FC-V1 The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz -- PXAC241702FC-V1 The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features...
High Power RF LDMOS FET 350 W, 28 V, 2300 – 2400 MHz -- PXAC243502FV-V1 The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design...
High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz -- PXAC260602FC-V1 The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include...
High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz -- PXAC261002FC-V1 The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include...
High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz -- PXAC261212FC-V1 The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path...
High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz -- PXAD184218FV-V1 The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features...
High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz -- PXAD214218FV-V1 The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features...
High Power RF LDMOS FET 430 W, 28 V, 1805 – 1880 MHz -- PXAE183708NB-V1 The PXAE183708NB is a 430-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz -- PXFC191507FC-V1 The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz -- PXFC192207FH-V3 The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz -- PXFE181507FC-V1 The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz -- PXFE211507FC-V1 The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching,...
350 W, 5200 to 5900-MHz, 50-Ohm Input/Output-Matched, GaN HEMT -- CGHV59350 Wolfspeed CGHV59350 is a GaN HEMT designed with high-efficiency, high-gain, and wide-bandwidth. It's ideal for 5.2-5.9 GHz c-band radar-amplifier applications.
10-W RF Power GaN HEMT -- CG2H40010 Wolfspeed’s CG2H40010 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
25-W RF Power GaN HEMT -- CG2H40025 Wolfspeed’s CG2H40025 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40025, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
15-W, 8.0-GHz, GaN HEMT Die -- CG2H80015D Wolfspeed’s CG2H80015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher...
30-W, 8.0-GHz, GaN HEMT Die -- CG2H80030D Wolfspeed’s CG2H80030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher...
60-W, 8.0-GHz, GaN HEMT Die -- CG2H80060D Wolfspeed’s CG2H80060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher...
240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems -- CGH31240 Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The transistor...
60-W, 3100 – 3500-MHz, 28-V GaN HEMT -- CGH35060F2/P2 Wolfspeed’s CGH35060F2/P2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 – 3.5-GHz, S-band, pulsed-amplifier applications. The...
240-W, 3100 – 3500-MHz, 50-ohm Input/Output-Matched, GaN HEMT for S-Band Radar Systems -- CGH35240 Wolfspeed’s CGH35240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35240F ideal for 3.1 – 3.5-GHz, S-band, radar-amplifier applications. The...
6-W RF Power GaN HEMT -- CGH40006P Wolfspeed’s CGH40006P is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40006P, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
6-W RF Power GaN HEMT, Plastic -- CGH40006S Wolfspeed’s CGH40006S is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40006S, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
10-W RF Power GaN HEMT -- CGH40010 Wolfspeed’s CGH40010 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
25-W RF Power GaN HEMT -- CGH40025 Wolfspeed’s CGH40025 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40025, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
10 W, C-band, Unmatched, GaN HEMT -- CGH55015F2/P2 Wolfspeed’s CGH55015F2/CGH55015P2 is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/ CGH55015P2 ideal for C-band...
25-W, C-band, Unmatched, GaN HEMT -- CGH55030F2/P2 Wolfspeed’s CGH55030F2/CGH55030P2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55030F2/ CGH55030P2 ideal for C-band pulsed or CW-saturated amplifiers. The...
8 W, 6.0 GHz, GaN HEMT Die -- CGH60008D Wolfspeed’s CGH60008D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher...
15-W, 6.0-GHz, GaN HEMT Die -- CGH60015D Wolfspeed’s CGH60015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher...
30-W, 6.0-GHz, GaN HEMT Die -- CGH60030D Wolfspeed’s CGH60030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher...
60-W, 6.0-GHz, GaN HEMT Die -- CGH60060D Wolfspeed’s CGH60060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher...
120-W, 6.0-GHz, GaN HEMT Die -- CGH60120D Wolfspeed’s CGH60120D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher...
60-W, DC to 2700-MHz, 50-V, GaN HEMT for LTE and Pulse-Radar Applications -- CGHV27060MP Wolfspeed’s CGHV27060MP is a 60-W gallium-nitride (GaN) high-electron-mobility transistor (HEMT) housed in a small, plastic SMT package 4.4-mm x 6.5-mm. The transistor is a broadband device with no internal input...
500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems -- CGHV31500F Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications. The...
60-W, 2700 to 3800-MHz, 50-V, GaN HEMT for S-Band Radar and LTE Base Stations -- CGHV35060MP Wolfspeed’s CGHV35060MP is a 60-W input-matched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to...
400-W, 2900 – 3500-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems -- CGHV35400F Wolfspeed’s CGHV35400F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 – 3.5-GHz, S-band, radar-amplifier applications. The...
50-W, DC – 4.0-GHz, 50-V, GaN HEMT -- CGHV40050 Wolfspeed’s CGHV40050 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40050, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
200-W, 4400 - 5000-MHz, 50-Ohm Input/Output-Matched, GaN HEMT -- CGHV50200F Wolfspeed’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 -...
70-W, 4500 to 5900-MHz, internally matched GaN HEMT for C-Band Radar Systems -- CGHV59070 Wolfspeed’s CGHV59070 is an internally matched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a...
2-W, 20-MHz – 6000-MHz, GaN HEMT MMIC Power Amplifier -- CMPA0060002D Wolfspeed’s CMPA0060002D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift...
15-W, 2.7 to 3.5-GHz, 50-V, GaN MMIC Power Amplifier, Bare Die -- CMPA2735015D Wolfspeed’s CMPA2735015D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity...
30-W, 2.7 to 3.5-GHz, 50-V, GaN MMIC Power Amplifier, Bare Die -- CMPA2735030D Wolfspeed’s CMPA2735030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity...
70-W, 0.5-3.0 GHz, GaN HEMT -- CG2H30070F Wolfspeed’s CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior...
45-W RF Power GaN HEMT -- CG2H40045 Wolfspeed’s CG2H40045 is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
120-W, UHF – 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM -- CGH09120F Wolfspeed’s CGH09120F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The...
120-W, 1800 – 2300-MHz, GaN HEMT for WCDMA, LTE, WiMAX -- CGH21120F Wolfspeed’s CGH21120F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH21120F ideal for 1.8 – 2.3-GHz WCDMA and LTE amplifier...
240-W, 1800 – 2300-MHz, GaN HEMT for WCDMA, LTE, WiMAX -- CGH21240F Wolfspeed’s CGH21240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH21240F ideal for 1.8 – 2.3-GHz WCDMA and LTE amplifier...
120-W, 2300 – 2700-MHz, GaN HEMT for WiMAX and LTE -- CGH25120F Wolfspeed’s CGH25120F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,...
15-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz -- CGH27015 Wolfspeed’s CGH27015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz...
30-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz -- CGH27030 Wolfspeed’s CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX...
30-W, DC – 6.0-GHz, 28-V, GaN HEMT -- CGH27030S Wolfspeed’s CGH27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,...
8-W (average), 28-V, GaN HEMT for linear communications ranging from VHF to 3 GHz -- CGH27060 Wolfspeed’s CGH27060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3 –
15-W, 3300 – 3900-MHz, 28-V, GaN HEMT for WiMAX -- CGH35015 Wolfspeed’s CGH35015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35015 ideal for...
30-W, 3300 – 3900-MHz, 28-V, GaN HEMT for WiMAX -- CGH35030 Wolfspeed’s CGH35030F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35030F ideal for 3.3 – 3.9-GHz WiMAX and BWA amplifier...
60-W, 3300 – 3600-MHz, 28-V, GaN HEMT for WiMAX -- CGH35060F1/P1 Wolfspeed’s CGH35060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35060F ideal for 3.3 – 3.6-GHz WiMAX and BWA amplifier...
35-W RF Power GaN HEMT -- CGH40035 Wolfspeed’s CGH40035F is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40035F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
45-W RF Power GaN HEMT -- CGH40045 Wolfspeed’s CGH40045 is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
90-W RF Power GaN HEMT -- CGH40090PP Wolfspeed’s CGH40090PP is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
120-W RF Power GaN HEMT -- CGH40120F Wolfspeed’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
120-W RF Power GaN HEMT -- CGH40120P Wolfspeed’s CGH40120P is an unmatched, gallium-nitride (GaN), high-electron-mobility transistor (HEMT). The CGH40120P, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
180-W RF Power GaN HEMT -- CGH40180PP Wolfspeed’s CGH40180PP is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40180PP, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
15-W, 5500 – 5800-MHz, GaN HEMT for WiMAX -- CGH55015F1/P1 Wolfspeed’s CGH55015F1/CGH55015P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5 – 5.8-GHz WiMAX and linear amplifier...
30-W, 5500 – 5800-MHz, 28-V, GaN HEMT for WiMAX -- CGH55030F1/P1 Wolfspeed’s CGH55030F1/CGH55030P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5 – 5.8-GHz WiMAX and BWA amplifier...
250-W, 1200 – 1400-MHz, GaN HEMT for L-Band Radar Systems -- CGHV14250 Wolfspeed’s CGHV14250 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 – 1.4-GHz L-Band...
500-W, 1200 – 1400-MHz, GaN HEMT for L-Band Radar Systems -- CGHV14500 Wolfspeed’s CGHV14500 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 – 1.4-GHz L-Band...
800-W, 1200 – 1400-MHz, GaN HEMT for L-Band Radar Systems -- CGHV14800 Wolfspeed’s CGHV14800 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2 – 1.4-GHz L-Band...
6-W, DC – 18-GHz, 40-V, GaN HEMT -- CGHV1F006S Wolfspeed’s CGHV1F006S is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-band...
25-W, DC – 15-GHz, 40-V, GaN HEMT -- CGHV1F025S Wolfspeed’s CGHV1F025S is an unmatched, gallium-nitride (GaN), high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-band...
6-W, 18.0-GHz, GaN HEMT Die -- CGHV1J006D Wolfspeed’s CGHV1J006D is a high-voltage gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is...
25-W, 18.0-GHz, GaN HEMT Die -- CGHV1J025D Wolfspeed’s CGHV1J025D is a high-voltage, gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is...
70-W, 18.0-GHz, GaN HEMT Die -- CGHV1J070D Wolfspeed’s CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency...
15 W, DC - 6.0 GHz, 50 V, GaN HEMT -- CGHV27015S Wolfspeed’s CGHV27015S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,...
150-W, 2900 – 3500-MHz, 50-V, GaN HEMT for S-Band Radar Systems -- CGHV35150 Wolfspeed’s CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The...
30-W, DC – 6-GHz, 50-V, GaN HEMT -- CGHV40030 Wolfspeed’s CGHV40030 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and...
100-W, DC CGHV40100 3-GHz, 50-V, GaN HEMT -- CGHV40100 Wolfspeed’s CGHV40100 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40100, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
180-W, DC - 2 GHz, GaN HEMT -- CGHV40180 Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior...
200-W RF Power GaN HEMT -- CGHV40200PP Wolfspeed’s CGHV40200PP is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40200PP, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
320-W, 4.0-GHz, GaN HEMT Die -- CGHV40320D Wolfspeed’s CGHV40320D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity.
40-W, 6.0-GHz, GaN HEMT Die -- CGHV60040D Wolfspeed’s CGHV60040D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity.
75-W, 6.0-GHz, GaN HEMT Die -- CGHV60075D5 Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity.
170-W, 6.0-GHz, 50-V GaN HEMT Die -- CGHV60170D Wolfspeed’s CGHV60170D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity.
50-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output Matched GaN HEMT -- CGHV96050F1 Wolfspeed’s CGHV96050F1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN...
50-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched GaN HEMT -- CGHV96050F2 Wolfspeed’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN...
100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier -- CGHV96100F2 Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN...
120-W, RF Power GaN HEMT -- CG2H40120 Wolfspeed's CG2H40120 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40120, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications.
120-W, 3100 – 3500-MHz, 50 V, GaN HEMT for S-Band Radar Systems -- CGHV35120F Wolfspeed's CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CGHV35120F ideal for 3.1 -...
35-W, 2000 – 6000-MHz, 28V, GaN MMIC Power Amplifier -- CMPA2060035F Wolfspeed's CMPA2060035F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift...