Wolfspeed Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

Product Name Notes
C2M1000170J-TR
C3M0015065D
C3M0015065K
C3M0016120D
C3M0016120K
C3M0021120D
C3M0021120K
C3M0025065D
C3M0025065J1
C3M0025065K
C3M0032120D
C3M0032120J1
C3M0032120K
C3M0040120D
C3M0040120J1
C3M0040120K
C3M0045065D
C3M0045065J1
C3M0045065K
C3M0045065L-TR
C3M0060065D
C3M0060065J
C3M0060065K
C3M0060065L-TR
C3M0065090J
C3M0065090J-TR
C3M0065100J-TR
C3M0075120D-A
C3M0075120J-TR
C3M0075120K-A
C3M0120065D
C3M0120065J
C3M0120065K
C3M0120065L-TR
C3M0120090J-TR
C3M0160120D
C3M0160120J
C3M0280090J
C3M0280090J-TR
C3M0350120D
C3M0350120J
C6D50065D1
C6D50065H
CAB006A12GM3
CAB006A12GM3T
CAB006M12GM3
CAB006M12GM3T
CAB008A12GM3
CAB008A12GM3T
CAB008M12GM3
CAB008M12GM3T
CAB011A12GM3
CAB011A12GM3T
CAB011M12FM3
CAB011M12FM3T
CAB016M12FM3
CAB016M12FM3T
CAB320M17XM3
CAB400M12XM3
CAB425M12XM3
CAB450M12XM3
CAB500M17HM3
CAB530M12BM3
CAB650M17HM3
CAB760M12HM3
CAB760M12HM3R
CAR600M12HN6
CAR600M17HN6
CAS100H12AM1
CAS110M12BM2
CAS120M12BM2
CAS175M12BM3
CAS300M12BM2
CAS300M17BM2
CAS310M17BM3
CAS325M12HM2
CAS350M12BM3
CAS380M17HM3
CAS480M12HM3
CAS530M12BM3
CBB021M12FM3
CBB021M12FM3T
CBB032M12FM3
CBB032M12FM3T
CCB016M12GM3
CCB016M12GM3T
CCB021M12FM3
CCB021M12FM3T
CCB032M12FM3
CCB032M12FM3T
CCS020M12CM2
CCS050M12CM2
CGH55030F2
CMF10120D
CMF20120D
CPMF-1200-S080B
CPMF-1200-S160B
E3M0016120K
E3M0021120K
E3M0032120K
E3M0040120K
E3M0045065K
E3M0060065D
E3M0060065K
E3M0065090D
E3M0075120D
E3M0075120K
E3M0120090J
E3M0160120D
E3M0160120K
E3M0280090D
EAB450M12XM3
PC3M0045065L
PC3M0060065L
WAB300M12BM3
WAB400M12BM3
WAS175M12BM3
WAS300M12BM2
WAS310M17BM3
WAS350M12BM3
WAS530M12BM3
WS1A2639-V1-R3K
WS1A3640-V1-R1
WS1A3940-V1-R3K
2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET -- C2M1000170J
Features High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Surface mount package with separate driver pin
2nd-Generation Z-FET® 1200-V, 40-mΩ, Silicon-Carbide MOSFET -- C2M0040120D
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Resistant to latch-up Easy to parallel and simple to drive
2nd-Generation Z-FET® 1200-V, 80-mΩ, Silicon-Carbide MOSFET -- C2M0080120D
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Avalanche ruggedness Resistant to latch-up Easy to parallel and simple to drive Halogen-free, RoHS-compliant
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET -- C2M0025120D
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up Avalanche ruggedness
2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET -- C2M0280120D
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Resistant to latch-up Easy to parallel and simple to drive Avalanche ruggedness
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET -- C2M0160120D
Features High-speed switching with low capacitances High blocking voltage with low RDS(on) Resistant to latch-up Easy to parallel and simple to drive Halogen-free, RoHS-compliant
2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET -- C2M1000170D
C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc. Features High-speed switching with...
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120090D
Silicon Carbide Power MOSFET C3MTM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0280090D
Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging...
400-W, 3300 – 3700-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems -- CGHV37400F
Cree’s CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.3...
25-W, 5200 – 5900-MHz, 28 V, GaN MMIC for Radar Power Amplifiers -- CMPA5259025F
Cree’s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 -...
50-W, 5200 – 5900-MHz, 28 V, GaN MMIC for Radar Power Amplifiers -- CMPA5259050F
Cree’s CMPA5259050F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259050F ideal for 5.2 -...
35-W, 9.0 – 10.0-MHz, 28 V, GaN MMIC for Radar Power Amplifiers -- CMPA901A035F
Cree's CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA901A035F ideal for 9 -...
30 W, DC - 6.0 GHz, GaN HEMT -- CGHV27030S
The CGHV27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for...
400-W; 2900 – 3500-MHz; 50-Ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems -- CGHV35400
The CGHV35400 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power,...
400-W; 2900 – 3500-MHz; 50-Ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems -- CGHV35400F1
The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power,...
High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz -- GTRA262802FC-V2
The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz -- GTRA263902FC-V2
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz -- GTRA362002FC-V1
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz -- GTRA362802FC-V1
The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz -- GTRA364002FC-V1
The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz -- GTRA374902FC-V1
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz -- GTRA384802FC-V1
The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a...
High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 – 1215 MHz -- GTVA101K42EV-V1
The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced...
High Power RF GaN on SiC HEMT 400 W, 50 V, 960 – 1215 MHz -- GTVA104001FA-V1
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 700 W, 50 V, 960 – 1215 MHz -- GTVA107001EC-V1
The GTVA107001EC is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequency band. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT 350 W, 50 V, 1200 - 1400 MHz -- GTVA123501FA-V1
The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMT, 600W, 50V, 1200MHz to 1400MHz -- GTVA126001EC-FC-V1
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the 1200 to 1400 MHz frequency band. They feature input matching, high efficiency,...
High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz -- GTVA261802FC-V1
The GTVA261802FC is a 170-watt GaN on SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package...
High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz -- GTVA262701FA-V2
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced...
High Power RF GaN on SiC HEMT 180 W, 50 V, 2700 – 3100 MHz -- GTVA311801FA-V1
The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequency band. It features input matching, high efficiency, and...
High Power RF GaN on SiC HEMTs 500 W, 50 V, 2900 – 3500 MHz -- GTVA355001EC-FC-V1
The GTVA355001EC and GTVA35501FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequency band. They feature input and output matching,...
High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz -- PTAB182002FC-V1
The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 80 W, 28 V, 1805 – 2170 MHz -- PTAC210802FC-V1
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz -- PTAC240502FC-V1
The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz -- PTFC210202FC-V1
The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS...
High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz -- PTFC270101M-V1
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz -- PTRA083818NF-V1
The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz -- PTRA087008NB
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process,...
High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz -- PTVA030121EA-V1
The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package.
High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz -- PTVA035002EV-V1
The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
High Power RF LDMOS FETs 250 W, 50 V, 470 – 806 MHz -- PTVA042502EFC-V1
The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package...
High Power RF LDMOS FETs 350 W, 50 V, 470 – 860 MHz -- PTVA043502EFC-V1
The PTVA043502EC and PTVA043502FC are LDMOS FETs designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package...
High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz -- PTVA101K02EV-V1
The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz -- PTVA102001EA-V1
The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with...
High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz -- PTVA104501EH-V1
The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz -- PTVA120251EA-V2
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with...
High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz -- PTVA120501EA-V1
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz -- PTVA123501FC-V1
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package...
High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz -- PTVA127002EV-V1
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz -- PXAC192908FV-V1
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include...
High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz -- PXAC200902FC-V1
The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz -- PXAC201202FC-V2
The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it...
High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz -- PXAC201602FC-V1
The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features...
High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz -- PXAC203302FV-V1
The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include...
High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz -- PXAD184218FV-V1
The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features...
High Power RF LDMOS FET 430 W, 28 V, 1805 – 1880 MHz -- PXAE183708NB-V1
The PXAE183708NB is a 430-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input matching, high gain...
High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz -- PXFC191507FC-V1
The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz -- PXFC192207FH-V3
The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz -- PXFE181507FC-V1
The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz -- PXFE211507FC-V1
The PXFE211507FC is a 170-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching,...
350 W, 5200 to 5900-MHz, 50-Ohm Input/Output-Matched, GaN HEMT -- CGHV59350
Wolfspeed CGHV59350 is a GaN HEMT designed with high-efficiency, high-gain, and wide-bandwidth. It's ideal for 5.2-5.9 GHz c-band radar-amplifier applications.
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0030090K
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing with wide creepage and clearance distance between drain and...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0075120J
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0075120K
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0075120D
Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made...
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- C2M0045170P
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- C2M0080170P
Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby...
E-Series Automotive Silicon Carbide MOSFET -- E3M0120090D
Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of SiC MOSFETs. The Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available in the industry.
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0065100J
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0065100K
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120100J
Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120100K
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle...
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode -- C2M0045170D
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0065090D
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging...
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode -- C3M0120090J
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase...
10-W RF Power GaN HEMT -- CG2H40010
Wolfspeed’s CG2H40010 is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CG2H40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
25-W RF Power GaN HEMT -- CG2H40025
Wolfspeed’s CG2H40025 is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CG2H40025, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
15-W, 8.0-GHz, GaN HEMT Die -- CG2H80015D
Wolfspeed’s CG2H80015D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and...
30-W, 8.0-GHz, GaN HEMT Die -- CG2H80030D
Wolfspeed’s CG2H80030D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and...
60-W, 8.0-GHz, GaN HEMT Die -- CG2H80060D
Wolfspeed’s CG2H80060D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and...
240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems -- CGH31240
Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The...
60-W, 3100 – 3500-MHz, 28-V GaN HEMT -- CGH35060F2/P2
Wolfspeed’s CGH35060F2/P2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35060F2/P2 ideal for 3.1 – 3.5-GHz, S-band, pulsed-amplifier applications.
6-W RF Power GaN HEMT -- CGH40006P
Wolfspeed’s CGH40006P is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40006P, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
6-W RF Power GaN HEMT, Plastic -- CGH40006S
Wolfspeed’s CGH40006S is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40006S, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
10-W RF Power GaN HEMT -- CGH40010
Wolfspeed’s CGH40010 is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
25-W RF Power GaN HEMT -- CGH40025
Wolfspeed’s CGH40025 is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40025, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
25-W, C-band, Unmatched, GaN HEMT -- CGH55030F2/P2
Wolfspeed’s CGH55030F2/CGH55030P 2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55030F2/ CGH55030P2 ideal for C-band pulsed or CW-saturated...
8 W, 6.0 GHz, GaN HEMT Die -- CGH60008D
Wolfspeed’s CGH60008D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and...
15-W, 6.0-GHz, GaN HEMT Die -- CGH60015D
Wolfspeed’s CGH60015D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and...
30-W, 6.0-GHz, GaN HEMT Die -- CGH60030D
Wolfspeed’s CGH60030D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and...
60-W, 6.0-GHz, GaN HEMT Die -- CGH60060D
Wolfspeed’s CGH60060D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and...
120-W, 6.0-GHz, GaN HEMT Die -- CGH60120D
Wolfspeed’s CGH60120D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and...
60-W, DC to 2700-MHz, 50-V, GaN HEMT for LTE and Pulse-Radar Applications -- CGHV27060MP
Wolfspeed’s CGHV27060MP is a 60-W gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) housed in a small, plastic SMT package 4.4-mm x 6.5-mm. The transistor is a broadband device with no internal...
500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems -- CGHV31500F
Wolfspeed’s CGHV31500F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 – 3.1-GHz s-band radar-amplifier applications.
60-W, 2700 to 3800-MHz, 50-V, GaN HEMT for S-Band Radar and LTE Base Stations -- CGHV35060MP
Wolfspeed’s CGHV35060MP is a 60-W input-matched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1...
400-W, 2900 – 3500-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems -- CGHV35400F
Wolfspeed’s CGHV35400F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 – 3.5-GHz, S-band, radar-amplifier applications.
50-W, DC – 4.0-GHz, 50-V, GaN HEMT -- CGHV40050
Wolfspeed’s CGHV40050 is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGHV40050, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
200-W, 4400 - 5000-MHz, 50-Ohm Input/Output-Matched, GaN HEMT -- CGHV50200F
Wolfspeed’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4...
70-W, 4500 to 5900-MHz, internally matched GaN HEMT for C-Band Radar Systems -- CGHV59070
Wolfspeed’s CGHV59070 is an internally matched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a...
2-W, 20-MHz – 6000-MHz, GaN HEMT MMIC Power Amplifier -- CMPA0060002D
Wolfspeed’s CMPA0060002D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift...
15-W, 2.7 to 3.5-GHz, 50-V, GaN MMIC Power Amplifier, Bare Die -- CMPA2735015D
Wolfspeed’s CMPA2735015D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity...
30-W, 2.7 to 3.5-GHz, 50-V, GaN MMIC Power Amplifier, Bare Die -- CMPA2735030D
Wolfspeed’s CMPA2735030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity...
70-W, 0.5-3.0 GHz, GaN HEMT -- CG2H30070F
Wolfspeed’s CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior...
45-W RF Power GaN HEMT -- CG2H40045
Wolfspeed’s CG2H40045 is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
120-W, UHF – 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM -- CGH09120F
Wolfspeed’s CGH09120F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications.
120-W, 1800 – 2300-MHz, GaN HEMT for WCDMA, LTE, WiMAX -- CGH21120F
Wolfspeed’s CGH21120F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH21120F ideal for 1.8 – 2.3-GHz WCDMA and LTE...
240-W, 1800 – 2300-MHz, GaN HEMT for WCDMA, LTE, WiMAX -- CGH21240F
Wolfspeed’s CGH21240F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH21240F ideal for 1.8 – 2.3-GHz WCDMA and LTE...
120-W, 2300 – 2700-MHz, GaN HEMT for WiMAX and LTE -- CGH25120F
Wolfspeed’s CGH25120F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX,...
15-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz -- CGH27015
Wolfspeed’s CGH27015 is a gallium-nitride (GaN) high-electron-mobili ty transistor designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3 –
30-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz -- CGH27030
Wolfspeed’s CGH27030 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz...
30-W, DC – 6.0-GHz, 28-V, GaN HEMT -- CGH27030S
Wolfspeed’s CGH27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,...
8-W (average), 28-V, GaN HEMT for linear communications ranging from VHF to 3 GHz -- CGH27060
Wolfspeed’s CGH27060F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3...
15-W, 3300 – 3900-MHz, 28-V, GaN HEMT for WiMAX -- CGH35015
Wolfspeed’s CGH35015 is a gallium-nitride (GaN) high-electron-mobili ty transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35015 ideal...
30-W, 3300 – 3900-MHz, 28-V, GaN HEMT for WiMAX -- CGH35030
Wolfspeed’s CGH35030F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35030F ideal for 3.3 – 3.9-GHz WiMAX and BWA...
60-W, 3300 – 3600-MHz, 28-V, GaN HEMT for WiMAX -- CGH35060F1/P1
Wolfspeed’s CGH35060F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35060F ideal for 3.3 – 3.6-GHz WiMAX and BWA...
35-W RF Power GaN HEMT -- CGH40035
Wolfspeed’s CGH40035F is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40035F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
45-W RF Power GaN HEMT -- CGH40045
Wolfspeed’s CGH40045 is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
90-W RF Power GaN HEMT -- CGH40090PP
Wolfspeed’s CGH40090PP is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
120-W RF Power GaN HEMT -- CGH40120F
Wolfspeed’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
120-W RF Power GaN HEMT -- CGH40120P
Wolfspeed’s CGH40120P is an unmatched, gallium-nitride (GaN), high-electron-mobili ty transistor (HEMT). The CGH40120P, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
180-W RF Power GaN HEMT -- CGH40180PP
Wolfspeed’s CGH40180PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40180PP, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
30-W, 5500 – 5800-MHz, 28-V, GaN HEMT for WiMAX -- CGH55030F1/P1
Wolfspeed’s CGH55030F1/CGH55030P 1 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55030F1/CGH55030P 1 ideal for 5.5 – 5.8-GHz WiMAX...
250-W, 1200 – 1400-MHz, GaN HEMT for L-Band Radar Systems -- CGHV14250
Wolfspeed’s CGHV14250 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 – 1.4-GHz...
500-W, 1200 – 1400-MHz, GaN HEMT for L-Band Radar Systems -- CGHV14500
Wolfspeed’s CGHV14500 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 – 1.4-GHz...
800-W, 1200 – 1400-MHz, GaN HEMT for L-Band Radar Systems -- CGHV14800
Wolfspeed’s CGHV14800 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.2 – 1.4-GHz...
6-W, DC – 18-GHz, 40-V, GaN HEMT -- CGHV1F006S
Wolfspeed’s CGHV1F006S is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and...
25-W, DC – 15-GHz, 40-V, GaN HEMT -- CGHV1F025S
Wolfspeed’s CGHV1F025S is an unmatched, gallium-nitride (GaN), high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and...
25-W, 18.0-GHz, GaN HEMT Die -- CGHV1J025D
Wolfspeed’s CGHV1J025D is a high-voltage, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It...
70-W, 18.0-GHz, GaN HEMT Die -- CGHV1J070D
Wolfspeed’s CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency...
15 W, DC - 6.0 GHz, 50 V, GaN HEMT -- CGHV27015S
Wolfspeed’s CGHV27015S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,...
150-W, 2900 – 3500-MHz, 50-V, GaN HEMT for S-Band Radar Systems -- CGHV35150
Wolfspeed’s CGHV35150 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications.
2.75 - 3.75, 400W GaN on SiC HPA -- CGHV38375F
Wolfspeed’s CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input and output ports. The CGHV38375F operates from 2.75 – 3.75 GHz providing coverage over the...
30-W, DC – 6-GHz, 50-V, GaN HEMT -- CGHV40030
Wolfspeed’s CGHV40030 is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S...
100-W, DC CGHV40100 3-GHz, 50-V, GaN HEMT -- CGHV40100
Wolfspeed’s CGHV40100 is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGHV40100, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
180-W, DC - 2 GHz, GaN HEMT -- CGHV40180
Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior...
200-W RF Power GaN HEMT -- CGHV40200PP
Wolfspeed’s CGHV40200PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGHV40200PP, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
320-W, 4.0-GHz, GaN HEMT Die -- CGHV40320D
Wolfspeed’s CGHV40320D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-d rift velocity, and higher...
40-W, 6.0-GHz, GaN HEMT Die -- CGHV60040D
Wolfspeed’s CGHV60040D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-d rift velocity, and higher...
75-W, 6.0-GHz, GaN HEMT Die -- CGHV60075D5
Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-d rift velocity, and higher...
170-W, 6.0-GHz, 50-V GaN HEMT Die -- CGHV60170D
Wolfspeed’s CGHV60170D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-d rift velocity, and higher...
50-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output Matched GaN HEMT -- CGHV96050F1
Wolfspeed’s CGHV96050F1 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
50-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched GaN HEMT -- CGHV96050F2
Wolfspeed’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier -- CGHV96100F2
Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
120-W, RF Power GaN HEMT -- CG2H40120
Wolfspeed's CG2H40120 is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CG2H40120, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
120-W, 3100 – 3500-MHz, 50 V, GaN HEMT for S-Band Radar Systems -- CGHV35120F
Wolfspeed's CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CGHV35120F ideal for 3.1 -...
35-W, 2000 – 6000-MHz, 28V, GaN MMIC Power Amplifier -- CMPA2060035F
Wolfspeed's CMPA2060035F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift...