Wolfspeed High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz PTVA123501FC-V1

Description
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Features Broadband internal input and output matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Excellent ruggedness Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 55.5 dBm under pulsed conditions: 300 μs pulse width, 12% duty cycle, VDD = 50 V
  • High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz - PTVA123501FC-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Features Broadband internal input and output matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Excellent ruggedness Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 55.5 dBm under pulsed conditions: 300 μs pulse width, 12% duty cycle, VDD = 50 V
Datasheet

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High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz - PTVA123501FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz
PTVA123501FC-V1
High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz PTVA123501FC-V1
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Features Broadband internal input and output matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Excellent ruggedness Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 55.5 dBm under pulsed conditions: 300 μs pulse width, 12% duty cycle, VDD = 50 V

The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

Features

  • Broadband internal input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 55.5 dBm under pulsed conditions: 300 μs pulse width,
  • 12% duty cycle, VDD = 50 V
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTVA123501FC-V1
Product Name High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz
Transistor Technology / Material High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz
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