Wolfspeed High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz PTRA087008NB

Description
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetric design Main: P1dB = 245 W Typ Peak: P1dB = 380 W Typ Typical pulsed CW performance, 805 MHz, 48 V, Doherty configuration Output power at P3dB = 650 W Efficiency = 52% Gain = 19.5 dB Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power Integrated ESD protection Low thermal resistance RoHS-compliant
Datasheet
Description
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetric design Main: P1dB = 245 W Typ Peak: P1dB = 380 W Typ Typical pulsed CW performance, 805 MHz, 48 V, Doherty configuration Output power at P3dB = 650 W Efficiency = 52% Gain = 19.5 dB Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power Integrated ESD protection Low thermal resistance RoHS-compliant
Datasheet

Suppliers

Company
Product
Description
Supplier Links
High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz - PTRA087008NB - Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz
PTRA087008NB
High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz PTRA087008NB
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Asymmetric design Main: P1dB = 245 W Typ Peak: P1dB = 380 W Typ Typical pulsed CW performance, 805 MHz, 48 V, Doherty configuration Output power at P3dB = 650 W Efficiency = 52% Gain = 19.5 dB Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power Integrated ESD protection Low thermal resistance RoHS-compliant

The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband internal input and output matching
  • Asymmetric design
    • Main: P1dB = 245 W Typ
    • Peak: P1dB = 380 W Typ
  • Typical pulsed CW performance, 805 MHz, 48 V, Doherty configuration
    • Output power at P3dB = 650 W
    • Efficiency = 52%
    • Gain = 19.5 dB
  • Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power
  • Integrated ESD protection
  • Low thermal resistance
  • RoHS-compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTRA087008NB
Product Name High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz
Transistor Technology / Material High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz
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