Wolfspeed High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz PTVA104501EH-V1

Description
The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Excellent ruggedness Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 450 W peak under RF pulse, 128 μS, 10% duty cycle.
  • High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz - PTVA104501EH-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Excellent ruggedness Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 450 W peak under RF pulse, 128 μS, 10% duty cycle.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz - PTVA104501EH-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz
PTVA104501EH-V1
High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz PTVA104501EH-V1
The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Excellent ruggedness Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 450 W peak under RF pulse, 128 μS, 10% duty cycle.

The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband internal input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 450 W peak under RF pulse,
  • 128 μS, 10% duty cycle.
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTVA104501EH-V1
Product Name High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz
Transistor Technology / Material High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz
Unlock Full Specs
to access all available technical data