Wolfspeed High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz PXFC191507FC-V1

Description
The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Typical Pulsed CW performance, 1990 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB test Output power at P1dB = 140 W Efficiency = 54% Gain = 19.5 dB Typical Pulsed CW performance, 1842.5 MHz, 28 V, Doherty configuration Output power at P3dB = 420 W Efficiency = 62% Gain = 14 dB Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 16DPCH Output power = 32 W avg Efficiency = 34% Gain = 20 dB ACPR = -31 dBc@ 5 MHz Capable of handling 10:1 VSWR @28 V, 150 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant
  • High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz - PXFC191507FC-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Typical Pulsed CW performance, 1990 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB test Output power at P1dB = 140 W Efficiency = 54% Gain = 19.5 dB Typical Pulsed CW performance, 1842.5 MHz, 28 V, Doherty configuration Output power at P3dB = 420 W Efficiency = 62% Gain = 14 dB Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 16DPCH Output power = 32 W avg Efficiency = 34% Gain = 20 dB ACPR = -31 dBc@ 5 MHz Capable of handling 10:1 VSWR @28 V, 150 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant
Datasheet

Suppliers

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High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz - PXFC191507FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz
PXFC191507FC-V1
High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz PXFC191507FC-V1
The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband internal input and output matching Typical Pulsed CW performance, 1990 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB test Output power at P1dB = 140 W Efficiency = 54% Gain = 19.5 dB Typical Pulsed CW performance, 1842.5 MHz, 28 V, Doherty configuration Output power at P3dB = 420 W Efficiency = 62% Gain = 14 dB Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 16DPCH Output power = 32 W avg Efficiency = 34% Gain = 20 dB ACPR = -31 dBc@ 5 MHz Capable of handling 10:1 VSWR @28 V, 150 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant

The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband internal input and output matching
  • Typical Pulsed CW performance, 1990 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB test
    • Output power at P1dB = 140 W
    • Efficiency = 54%
    • Gain = 19.5 dB
  • Typical Pulsed CW performance, 1842.5 MHz, 28 V, Doherty configuration
    • Output power at P3dB = 420 W
    • Efficiency = 62%
    • Gain = 14 dB
  • Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 16DPCH
    • Output power = 32 W avg
    • Efficiency = 34%
    • Gain = 20 dB
    • ACPR = -31 dBc@ 5 MHz
  • Capable of handling 10:1 VSWR @28 V, 150 W (CW) output power
  • Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PXFC191507FC-V1
Product Name High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz
Transistor Technology / Material High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz
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