The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Features
Broadband internal input and output matching
Asymmetric Doherty design
Main: P1dB = 130 W Typ
Peak: P1dB = 290 W Typ
Typical Pulsed CW performance, 1842.5 MHz, 28 V, Doherty configuration
Output power at P3dB = 420 W
Efficiency = 62%
Gain = 14 dB
Capable of handling 10:1 VSWR @28 V, 110 W (WCDMA) output power
Integrated ESD protection
Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001)
Low thermal resistance
Pb-free and RoHS compliant
The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Features
- Broadband internal input and output matching
- Asymmetric Doherty design
- Main: P1dB = 130 W Typ
- Peak: P1dB = 290 W Typ
- Typical Pulsed CW performance, 1842.5 MHz, 28 V, Doherty configuration
- Output power at P3dB = 420 W
- Efficiency = 62%
- Gain = 14 dB
- Capable of handling 10:1 VSWR @28 V, 110 W (WCDMA) output power
- Integrated ESD protection
- Human Body Model, Class 2 (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant
